Si3552DV New Product Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET VDS (V) N-Channel 30 P-Channel –30 rDS(on) () ID (A) 0.105 @ VGS = 10 V 2.5 0.175 @ VGS = 4.5 V 2.0 0.200 @ VGS = –10 V 1.8 0.360 @ VGS = –4.5 V 1.2 D1 S2 TSOP-6 Top View G1 1 6 D1 G2 3 mm S2 2 5 S1 G2 3 4 D2 G1 2.85 mm S1 D2 N-Channel MOSFET P-Channel MOSFET Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 30 –30 Gate-Source Voltage VGS 20 20 2.5 1.8 Continuous Drain Current (TJ = 150C)a, b TA = 25C TA = 70C Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b TA = 25C Maximum Power Dissipationa, b TA = 70C Operating Junction and Storage Temperature Range ID 2.0 1.2 IDM 8 7 IS 1.05 –1.05 Unit V A 1.15 PD W 0.73 TJ, Tstg C –55 to 150 Parameter Maximum Junction-to-Ambienta Symbol t 5 sec Steady State Maximum Junction-to-Lead Steady State RthJA RthJL Typical Maximum 93 110 130 150 75 90 Unit C/W Notes a. Surface Mounted on FR4 Board. b. t 5 sec Document Number: 70971 S-61831—Rev. A, 23-Aug-99 www.vishay.com FaxBack 408-970-5600 2-1 Si3552DV New Product Vishay Siliconix Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage Z G V l D i Current C Zero Gate Voltage Drain On-State Drain Currenta a D i S O S R i Drain-Source On-State Resistance Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA N-Ch 1.0 VDS = VGS, ID = –250 mA P-Ch –1.0 VDS = 0 V, VGS = "20 V V N-Ch "100 P-Ch "100 VDS = 24 V, VGS = 0 V N-Ch 1 VDS = –24 V, VGS = 0 V P-Ch –1 VDS = 24 V, VGS = 0 V, TJ = 55C N-Ch 5 VDS = –24 V, VGS = 0 V, TJ = 55C P-Ch VDS = 5 V, VGS = 10 V N-Ch 5 VDS = –5 V, VGS = –10 V P-Ch –5 VGS = 10 V, ID = 2.5 A N-Ch 0.085 0.105 VGS = –10 V, ID = –1.8 A P-Ch 0.165 0.200 VGS = 4.5 V, ID = 2.0 A N-Ch 0.140 0.175 VGS = –4.5 V, ID = –1.2 A P-Ch 0.298 0.360 VDS = 10 V, ID = 2.5 A N-Ch 4.3 VDS = –15 V, ID = –1.8 A P-Ch 2.4 IS = 1.05 A, VGS = 0 V N-Ch 0.81 1.10 IS = –1.05 A, VGS = 0 V P-Ch –0.83 –1.10 N-Ch 2.1 3.2 3.6 nA A mA –5 A W S V Dynamicb Total Gate Charge Gate-Source Charge Qg Qgs N-Channel N Ch Channel l VDS = 15 V, VGS = 5 V, ID = 1.8 A P-Channel VDS = –15 15 V V, VGS = –5 5V V, ID = –1.8 18A Gate-Drain Charge Turn-On Delay Time Time Rise Time Turn-Off Delay Time Fall Time Source-Drain R Reverse R Recovery Time Ti Qgd td(on) P-Ch 2.4 N-Ch 0.7 P-Ch 0.9 N-Ch 0.7 P-Ch 0.8 N-Ch 7 11 P-Ch 8 12 C nC N Ch l N-Channel VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W N-Ch 9 14 tr P-Ch 12 18 N-Ch 13 20 td(off) P-Channel VDD = –15 15 V V, RL = 15 W ID ^ –1 1 A, VGEN = –10 10 V, RG = 6 W P-Ch 12 18 N-Ch 5 8 P-Ch 7 11 IF = 1.05 A, di/dt = 100 A/ms N-Ch 35 60 IF = –1.05 A, di/dt = 100 A/ms P-Ch 30 60 tf trr ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com FaxBack 408-970-5600 2-2 Document Number: 70971 S-61831—Rev. A, 23-Aug-99 Si3552DV New Product Vishay Siliconix Output Characteristics Transfer Characteristics 10 10 TC = –55C VGS = 10 thru 5 V 25C 8 6 I D – Drain Current (A) I D – Drain Current (A) 8 4V 4 2 6 125C 4 2 3V 2V 0 0 0 1 2 3 4 5 0 1 2 On-Resistance vs. Drain Current 5 6 25 30 Capacitance 0.25 300 250 0.20 C – Capacitance (pF) r DS(on)– On-Resistance ( ) 4 VGS – Gate-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V) VGS = 4.5 V 0.15 VGS = 10 V 0.10 0.05 Ciss 200 150 100 Coss 50 0 Crss 0 0 1 2 3 4 5 6 7 0 5 ID – Drain Current (A) 1.8 1.6 r DS(on)– On-Resistance ( ) (Normalized) VDS = 15 V ID = 1.8 A 8 6 4 2 0 0 1 2 3 Qg – Total Gate Charge (nC) Document Number: 70971 S-61831—Rev. A, 23-Aug-99 10 15 20 VDS – Drain-to-Source Voltage (V) Gate Charge 10 V GS – Gate-to-Source Voltage (V) 3 4 On-Resistance vs. Junction Temperature VGS = 10 V ID = 2.5 A 1.4 1.2 1.0 0.8 0.6 0.4 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (C) www.vishay.com FaxBack 408-970-5600 2-3 Si3552DV New Product Vishay Siliconix Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.40 10 r DS(on) – On-Resistance ( W ) I S – Source Current (A) ID = 2 A TJ = 150C 1 TJ = 25C 0.32 ID = 2.5 A 0.24 0.16 0.08 0 0.1 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 2 VSD – Source-to-Drain Voltage (V) 4 6 8 10 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power (Junction-to-Ambient) 0.4 8 ID = 250 mA 0.2 Power (W) V GS(th) Variance (V) 6 –0.0 –0.2 4 –0.4 2 –0.6 –0.8 –50 0 –25 0 25 50 75 100 125 150 0.01 1 0.1 TJ – Temperature (C) 10 30 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM t1 t2 1. Duty Cycle, D = 0.05 t1 t2 2. Per Unit Base = RthJA = 130C/W 0.02 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 2-4 Document Number: 70971 S-61831—Rev. A, 23-Aug-99 Si3552DV New Product Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 Output Characteristics Transfer Characteristics 8 10 6V VGS = 10 thru 7 V TC = –55C 8 I D – Drain Current (A) I D – Drain Current (A) 6 5V 6 4 4V 2 2V 25C 125C 4 2 3V 0 0 0 1 2 3 4 5 0 1 VDS – Drain-to-Source Voltage (V) 2 4 5 6 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 300 0.6 0.5 240 0.4 C – Capacitance (pF) r DS(on)– On-Resistance ( ) 3 VGS = 4.5 V 0.3 VGS = 10 V 0.2 Ciss 180 120 Coss 60 0.1 Crss 0 0 0 1 2 3 4 5 ID – Drain Current (A) Document Number: 70971 S-61831—Rev. A, 23-Aug-99 6 7 0 6 12 18 24 30 VDS – Drain-to-Source Voltage (V) www.vishay.com FaxBack 408-970-5600 2-5 Si3552DV New Product Vishay Siliconix Gate Charge VDS = 15 V ID = 1.8 A 8 VGS = 10 V ID = 1.8 A 1.6 6 4 2 0 0 On-Resistance vs. Junction Temperature 1.8 r DS(on)– On-Resistance ( W ) (Normalized) V GS – Gate-to-Source Voltage (V) 10 1 2 3 4 1.4 1.2 1.0 0.8 0.6 0.4 –50 5 –25 0 Qg – Total Gate Charge (nC) 25 50 75 100 125 150 TJ – Junction Temperature (C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.6 10 ID = 1.8 A r DS(on)– On-Resistance ( W ) I S – Source Current (A) 0.5 TJ = 150C 1 TJ = 25C ID = 1 A 0.4 0.3 0.2 0.1 0 0.1 0.00 0.3 0.6 0.9 1.2 0 1.5 2 VSD – Source-to-Drain Voltage (V) 4 6 8 10 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power (Junction-to-Ambient) 0.6 8 0.4 0.2 Power (W) V GS(th) Variance (V) 6 ID = 250 mA 0.0 4 2 –0.2 –0.4 –50 0 –25 0 25 50 75 TJ – Temperature (C) www.vishay.com FaxBack 408-970-5600 2-6 100 125 150 0.01 1 0.1 10 30 Time (sec) Document Number: 70971 S-61831—Rev. A, 23-Aug-99 Si3552DV New Product Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 130C/W 0.02 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10–4 10–3 10–2 10–1 1 100 10 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 Document Number: 70971 S-61831—Rev. A, 23-Aug-99 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com FaxBack 408-970-5600 2-7