VISHAY SI3905DV

Si3905DV
New Product
Vishay Siliconix
Dual P-Channel 8-V (D-S) MOSFET
VDS (V)
rDS(on) ()
ID (A)
0.125 @ VGS = –4.5 V
2.5
–8
8
0.175 @ VGS = –2.5 V
2.0
0.265 @ VGS = –1.8 V
1.7
S1
S2
TSOP-6
Top View
G1
1
6
D1
S2
2
5
S1
G2
3
4
D2
G1
3 mm
2.85 mm
G2
D1
D2
P-Channel MOSFET
P-Channel MOSFET
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
–8
Gate-Source Voltage
VGS
8
Continuous Drain Current (TJ = 150C)
150 C)a, b
ID
2.0
TA = 70C
Continuous Diode Current (Diode Conduction)a, b
TA = 25C
Maximum Power Dissipationa, b
TA = 70C
Operating Junction and Storage Temperature Range
V
2.5
TA = 25C
Pulsed Drain Current
Unit
IDM
7
IS
–1.05
A
1.15
PD
W
0.73
TJ, Tstg
C
–55 to 150
Parameter
Maximum Junction-to-Ambienta
Symbol
t 5 sec
Steady State
Maximum Junction-to-Lead
Steady State
RthJA
RthJL
Typical
Maximum
93
110
130
150
75
90
Unit
C/W
Notes
a. Surface Mounted on FR4 Board.
b. t 5 sec
Document Number: 70973
S-61840—Rev. A, 13-Sep-99
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Si3905DV
New Product
Vishay Siliconix
Parameter
Symbol
Test Condition
Min
VGS(th)
VDS = VGS, ID = –250 mA
–0.45
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
a
D
i S
O S
R i
Drain-Source
On-State
Resistance
Forward Transconductancea
Diode Forward Voltagea
ID(on)
V
VDS = 0 V, VGS = "8 V
"100
VDS = –6.4 V, VGS = 0 V
–1
VDS = –6.4 V, VGS = 0 V, TJ = 55C
–5
VDS = v–5 V, VGS = –4.5 V
–5
mA
A
VGS = –4.5 V, ID = –2.5 A
0.103
0.125
VGS = –2.5 V, ID = –2.0 A
0.146
0.175
VGS = –1.8 V, ID = –1 A
0.205
0.265
gfs
VDS = –4.5 V, ID = –2.5 A
5.3
VSD
IS = –1.05 A, VGS = 0 V
–0.79
–1.1
4.2
6
VDS = –5
5 V,
V VGS = –4.5
45V
V, ID = –2.5
25A
0.45
rDS(on)
nA
W
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
nC
C
Gate-Drain Charge
Qgd
0.90
Turn-On Delay Time
td(on)
10
15
tr
47
70
28
45
34
50
20
40
Rise Time
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
5V
VDD = –5
V,, RL = 5 W
ID ^ –1
1 A,
A VGEN = –4.5
45V
V, RG = 6 W
IF = –1.05 A, di/dt = 100 A/ms
ns
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
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Document Number: 70973
S-61840—Rev. A, 13-Sep-99
Si3905DV
New Product
Vishay Siliconix
Output Characteristics
Transfer Characteristics
8
8
2.5 V
VGS = 5 thru 3 V
TC = –55C
6
I D – Drain Current (A)
I D – Drain Current (A)
6
2V
4
2
1.5 V
25C
125C
4
2
1V
0
0
0
1
2
3
4
5
0
0.5
VDS – Drain-to-Source Voltage (V)
1.0
2.0
2.5
3.0
VGS – Gate-to-Source Voltage (V)
Capacitance
On-Resistance vs. Drain Current
800
0.5
0.4
VGS = 2.5 V
C – Capacitance (pF)
r DS(on) – On-Resistance ( )
1.5
0.3
VGS = 3.6 V
0.2
VGS = 4.5 V
600
Ciss
400
Coss
200
0.1
Crss
0
0
0
1
2
3
4
5
6
7
0
2
ID – Drain Current (A)
Gate Charge
1.8
VDS = 5 V
ID = 2.5 A
1.6
r DS(on) – On-Resistance ()
(Normalized)
V GS – Gate-to-Source Voltage (V)
6
8
VDS – Drain-to-Source Voltage (V)
5
4
4
3
2
1
On-Resistance vs. Junction Temperature
VGS = 4.5 V
ID = 2.5 A
1.4
1.2
1.0
0.8
0.6
0
0
1
2
3
Qg – Total Gate Charge (nC)
Document Number: 70973
S-61840—Rev. A, 13-Sep-99
4
5
0.4
–50
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (C)
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Si3905DV
New Product
Vishay Siliconix
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
0.4
r DS(on)– On-Resistance ( W )
I S – Source Current (A)
10
TJ = 150C
1
TJ = 25C
0.3
ID = 2.5 A
0.2
ID = 1 A
0.1
0
0.1
0.00
0.3
0.6
0.9
1.2
0
1.5
VSD – Source-to-Drain Voltage (V)
1
2
3
4
5
VGS – Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
0.3
8
ID = 250 mA
6
Power (W)
V GS(th) Variance (V)
0.2
0.1
0.0
4
2
–0.1
–0.2
–50
0
–25
0
25
50
75
100
125
150
0.01
1
0.1
TJ – Temperature (C)
10
30
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.1
0.2
Notes:
0.1
PDM
t1
t2
1. Duty Cycle, D =
0.05
t1
t2
2. Per Unit Base = RthJA = 130C/W
0.02
3. TJM – TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10–4
10–3
10–2
10–1
1
10
100
600
Square Wave Pulse Duration (sec)
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Document Number: 70973
S-61840—Rev. A, 13-Sep-99
Si3905DV
New Product
Vishay Siliconix
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–4
Document Number: 70973
S-61840—Rev. A, 13-Sep-99
10–3
10–2
10–1
Square Wave Pulse Duration (sec)
1
10
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