Si4886DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET VDS (V) 30 rDS(on) () ID (A) 0.010 @ VGS = 10 V 13 0.0135 @ VGS = 4.5 V 11 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150C)a TA = 25C TA = 70C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a IS TA = 25C Maximum Power Dissipationa TA = 70C Operating Junction and Storage Temperature Range PD V 13 9.5 10.5 7.6 50 IDM 2.60 1.40 2.95 1.56 1.90 1.0 TJ, Tstg Unit A W C –55 to 150 Parameter Maximum Junction-to-Ambient (MOSFET)a Symbol t 10 sec Steady State Maximum Junction-to-Foot (Drain) Steady State RthJA RthJF Typical Maximum 35 42 68 80 18 23 Unit C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71142 S-00206—Rev. A, 21-Feb-00 www.vishay.com FaxBack 408-970-5600 2-1 Si4886DY New Product Vishay Siliconix Parameter Symbol Test Condition Min Typ Max VGS(th) VDS = VGS, ID = 250 mA 0.80 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 24 V, VGS = 0 V 1 VDS = 24 V, VGS = 0 V, TJ = 70C 5 Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) VDS w 5 V, VGS = 10 V V nA mA 40 A VGS = 10 V, ID = 13 A 0.0078 0.010 VGS = 4.5 V, ID = 11 A 0.0105 0.0135 Forward Transconductancea gfs VDS = 15 V, ID = 13 A 38 Diode Forward Voltagea VSD IS = 2.6 A, VGS = 0 V 0.74 1.1 14.5 20 W S V Dynamicb Total Gate Charge Qg VDS = 15 V, V VGS = 5 5.0 0V V, ID = 13 A nC C Gate-Source Charge Qgs Gate-Drain Charge Qgd 4.3 Turn-On Delay Time td(on) 14 20 Rise Time tr Turn-Off Delay Time VDD = 15 V V,, RL = 15 W ID ^ 1 A, A VGEN = 10 V V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 3.2 IF = 2.6 A, di/dt = 100 A/ms 5 10 42 80 18 30 40 70 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Output Characteristics Transfer Characteristics 50 50 VGS = 10 thru 4 V 40 I D – Drain Current (A) I D – Drain Current (A) 40 30 20 3V 10 30 20 TC = 125C 10 25C 1V 0 0 2 4 6 8 VDS – Drain-to-Source Voltage (V) www.vishay.com FaxBack 408-970-5600 2-2 –55C 0 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS – Gate-to-Source Voltage (V) Document Number: 71142 S-00206—Rev. A, 21-Feb-00 Si4886DY New Product Vishay Siliconix On-Resistance vs. Drain Current Capacitance 2500 2000 0.015 C – Capacitance (pF) r DS(on) – On-Resistance ( ) 0.020 VGS = 4.5 V 0.010 VGS = 10 V Ciss 1500 1000 Coss 0.005 500 0 Crss 0 0 10 20 30 40 0 50 5 ID – Drain Current (A) Gate Charge VDS = 15 V ID = 13 A 25 30 VGS = 10 V ID = 13 A 1.6 r DS(on) – On-Resistance () (Normalized) V GS – Gate-to-Source Voltage (V) 20 On-Resistance vs. Junction Temperature 1.8 6 4 2 1.4 1.2 1.0 0.8 0.6 0 0 5 10 15 20 25 0.4 –50 30 –25 0 Qg – Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.05 r DS(on) – On-Resistance ( ) 10 TJ = 150C TJ = 25C 0.04 0.03 0.02 ID = 13 A 0.01 0 1 0.00 25 TJ – Junction Temperature (C) 50 I S – Source Current (A) 15 VDS – Drain-to-Source Voltage (V) 10 8 10 0.2 0.4 0.6 0.8 VSD – Source-to-Drain Voltage (V) Document Number: 71142 S-00206—Rev. A, 21-Feb-00 1.0 1.2 0 2 4 6 8 10 VGS – Gate-to-Source Voltage (V) www.vishay.com FaxBack 408-970-5600 2-3 Si4886DY New Product Vishay Siliconix Single Pulse Power Threshold Voltage 0.4 60 ID = 250 mA 50 –0.0 Power (W) V GS(th) Variance (V) 0.2 –0.2 40 30 –0.4 20 –0.6 10 –0.8 –50 0 –25 0 25 50 75 100 125 150 0.01 1 0.1 10 30 Time (sec) TJ – Temperature (C) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 68C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 www.vishay.com FaxBack 408-970-5600 2-4 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71142 S-00206—Rev. A, 21-Feb-00