Si4500DY New Product Vishay Siliconix Complementary MOSFET Half-Bridge (N- and P-Channel) VDS (V) N-Channel 20 P-Channel –20 rDS(on) () ID (A) 0.030 @ VGS = 4.5 V 7.0 0.040 @ VGS = 2.5 V 6.0 0.065 @ VGS = –4.5 V 4.5 0.100 @ VGS = –2.5 V 3.5 S2 SO-8 G2 S1 1 8 D G1 2 7 D S2 3 6 D G2 4 5 D D G1 Top View S1 Symbol N-Channel P-Channel Drain-Source Voltage Parameter VDS 20 –20 Gate-Source Voltage VGS 12 12 7.0 4.5 5.5 3.5 IDM 30 20 IS 1.7 Continuous Drain Current (TJ = 150C)a, b TA = 25C TA = 70C Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b TA = 25C Maximum Power Dissipationa, b TA = 70C Operating Junction and Storage Temperature Range ID V A –1.7 2.5 PD W 1.6 TJ, Tstg Unit C –55 to 150 N-Channel P Parameter Maximum Junction-to-Ambienta S b l Symbol t 10 sec Steady-State Maximum Junction-to-Foot Steady-State RthJA RthJC P- Channel Typ Max Typ Max 38 50 40 50 73 95 73 95 17 22 20 26 U i Unit C/W Notes a. Surface Mounted on FR4 Board. b. t 10 sec Document Number: 70880 S-00269—Rev. A, 26-Apr-99 www.vishay.com FaxBack 408-970-5600 2-1 Si4500DY New Product Vishay Siliconix Parameter Symbol Test Condition Min Typa Max Unit Static Gate Threshold Voltage Gate-Body Leakage Z G V l D i Current C Zero Gate Voltage Drain On-State Drain Currentb b D i S O S R i Drain-Source On-State Resistance Forward Transconductanceb Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA N-Ch 0.6 VDS = VGS, ID = –250 mA P-Ch –0.6 VDS = 0 V, VGS = "12 V V N-Ch "100 P-Ch "100 VDS = 16 V, VGS = 0 V N-Ch 1 VDS = –16 V, VGS = 0 V P-Ch –1 VDS = 16 V, VGS = 0 V, TJ = 55C N-Ch 5 VDS = –16 V, VGS = 0 V, TJ = 55C P-Ch nA A mA –5 VDS = 5 V, VGS = 4.5 V N-Ch 30 VDS = –5 V, VGS = –4.5 V P-Ch –20 VGS = 4.5 V, ID = 7.0 A N-Ch 0.022 0.030 VGS = –4.5 V, ID = –4.5 A P-Ch 0.058 0.065 VGS = 2.5 V, ID = 6.0 A N-Ch 0.030 0.040 VGS = –2.5 V, ID = –3.5 A P-Ch 0.087 0.100 A VDS = 15 V, ID = 7.0 A N-Ch 22 VDS = –15 V, ID = –4.5 A P-Ch 10 IS = 1.7 A, VGS = 0 V N-Ch 0.70 1.2 IS = –1.7 A, VGS = 0 V P-Ch –0.80 –1.2 N-Ch 13 25 15 W S V Dynamica Total Gate Charge Gate-Source Charge Qg Qgs N-Channel Ch l N Channel VDS = 10 V, VGS = 4.5 V, ID = 3.5 A P-Channel VDS = –10 10 V, V VGS = –4.5 4 5 V, V ID = –4.5 45A Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qgd td(on) tr Ch l N-Channel N Channel VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W td(off) P-Channel 10 V VDD = –10 V, RL = 10 W ID ^ –1 A, VGEN = –4.5 4.5 V, RG = 6 W tf trr IF = 1.7 A, di/dt = 100 A/ms P-Ch 8.5 N-Ch 3.0 P-Ch 2.8 N-Ch 3.3 P-Ch 1.7 N-Ch 22 40 P-Ch 15 30 N-Ch 40 80 C nC P-Ch 32 60 N-Ch 50 100 P-Ch 57 100 N-Ch 20 40 P-Ch 40 80 N-Ch 40 80 P-Ch 40 80 ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com FaxBack 408-970-5600 2-2 Document Number: 70880 S-00269—Rev. A, 26-Apr-99 Si4500DY New Product Vishay Siliconix Output Characteristics Transfer Characteristics 30 30 VGS = 5 thru 3 V 2.5 V 24 I D – Drain Current (A) I D – Drain Current (A) 24 18 12 2V 6 18 12 TC = 125C 6 25C 1.5 V –55C 0 0 0 2 4 6 8 10 0 0.5 1.0 1.5 2.0 2.5 3.0 VGS – Gate-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current 0.08 2100 Ciss 0.06 C – Capacitance (pF) r DS(on)– On-Resistance ( ) 1800 VGS = 2.5 V 0.04 VGS = 4.5 V 0.02 1500 1200 900 600 Coss 300 Crss 0 0 0 6 12 18 24 0 30 4 Gate Charge 1.6 r DS(on)– On-Resistance ( ) (Normalized) V GS – Gate-to-Source Voltage (V) 1.8 VDS = 10 V ID = 4.5 A 3.6 2.7 1.8 0.9 0 0 3 6 9 Qg – Total Gate Charge (nC) Document Number: 70880 S-00269—Rev. A, 26-Apr-99 12 16 20 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) 4.5 8 12 15 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 4.5 A 1.4 1.2 1.0 0.8 0.6 0.4 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (C) www.vishay.com FaxBack 408-970-5600 2-3 Si4500DY New Product Vishay Siliconix Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.10 0.08 10 ID = 4.5 A 0.06 TJ = 150C 0.04 r DS(on) I S – Source Current (A) 20 TJ = 25C 0.02 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 VSD – Source-to-Drain Voltage (V) 4 6 8 10 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power, Juncion-To-Ambient 0.4 80 ID = 250 mA 60 Power (W) V GS(th) Variance (V) 0.2 –0.0 40 –0.2 20 –0.4 –0.6 –50 0 –25 0 25 50 75 100 125 150 0.001 0.1 0.01 TJ – Temperature (C) 1 10 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 73C/W 0.02 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 2-4 Document Number: 70880 S-00269—Rev. A, 26-Apr-99 Si4500DY New Product Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 Output Characteristics Transfer Characteristics 20 20 TC = –55C 3V 16 16 I D – Drain Current (A) I D – Drain Current (A) VGS = 5, 4.5, 4, 3.5 V 2.5 V 12 8 2V 4 125C 12 25C 8 4 1.5 V 0 0 0 1 2 3 4 5 0 0.5 VDS – Drain-to-Source Voltage (V) 1.0 0.16 1200 VGS = 2.7 V 0.08 2.5 3.0 3.5 Capacitance 1500 C – Capacitance (pF) r DS(on)– On-Resistance ( ) On-Resistance vs. Drain Current VGS = 2.5 V 2.0 VGS – Gate-to-Source Voltage (V) 0.20 0.12 1.5 VGS = 4.5 V Ciss 900 600 0.04 300 0 0 Coss Crss 0 4 8 12 ID – Drain Current (A) Document Number: 70880 S-00269—Rev. A, 26-Apr-99 16 20 0 4 8 12 16 20 VDS – Drain-to-Source Voltage (V) www.vishay.com FaxBack 408-970-5600 2-5 Si4500DY New Product Vishay Siliconix Gate Charge On-Resistance vs. Junction Temperature 1.6 VDS = 10 V ID = 4.4 A 4 r DS(on)– On-Resistance ( W ) (Normalized) V GS – Gate-to-Source Voltage (V) 5 3 2 1 0 0 2 4 6 8 VGS = 4.5 V ID = 4.4 A 1.4 1.2 1.0 0.8 0.6 –50 10 –25 0 Qg – Total Gate Charge (nC) 25 50 75 100 125 150 TJ – Junction Temperature (C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.20 r DS(on)– On-Resistance ( W ) 20 I S – Source Current (A) 10 TJ = 150C TJ = 25C 0.16 0.12 ID = 4.4 A 0.08 0.04 0 1 0 0.25 0.50 0.75 1.00 1.25 0 1.50 1 VSD – Source-to-Drain Voltage (V) 2 3 4 5 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power, Juncion-To-Ambient 0.6 80 0.4 0.2 Power (W) V GS(th) Variance (V) 60 ID = 250 mA 40 0.0 20 –0.2 –0.4 –50 0 –25 0 25 50 75 TJ – Temperature (C) www.vishay.com FaxBack 408-970-5600 2-6 100 125 150 0.001 0.01 0.1 1 10 Time (sec) Document Number: 70880 S-00269—Rev. A, 26-Apr-99 Si4500DY New Product Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 73C/W 0.02 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10–4 10–3 10–2 10–1 1 100 10 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 Document Number: 70880 S-00269—Rev. A, 26-Apr-99 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com FaxBack 408-970-5600 2-7