SSDI 2SPT6341SD

2SPT6341SD
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
MultiEpitaxial Planar
NPN Power Transistor Die
DESIGNER’S DATA SHEET
.170
.011
Features:
• Recommended replacement for the 2N6338 – 6341 series
• Die Size: 170 x 180 Mils
• Die Thickness: 260 – 330 µm
• Bonding Area:
Emitter: 30 x 60 Mils
Base: 40 x 50 Mils
• Maximum Recommended Wire Bonding:
Emitter: Al (15 Mils Dia)
Base: Al (15 Mils Dia)
• Metallization:
Top:
60,000Å Al
Bottom: 5,500Å Au / Cr / Ni / Au
E
.180
B
Maximum Ratings 4/
Symbol
Value
Units
Collector – Emitter Voltage
VCEO
125
Volts
Collector – Base Voltage
VCBO
180
Volts
Emitter – Base Voltage
VEBO
6
Volts
Continuous Collector Current
Peak Collector Current
IC
IC max
25
50
Amps
Continuous Base Current
IB
10
Amps
Power Dissipation @ TC = 25ºC
Derate above 25ºC
PD
200
1.143
W
W/ºC
Top & Tstg
-65 to +200
ºC
RθJC
0.875
ºC/W
Operating & Storage Temperature
Junction to Case
Maximum Thermal Resistance
Electrical Characteristic 4/
Collector – Emitter
Breakdown Voltage
IC = 50mA
Symbol
Min
Typ
Max
Units
BVCEO 3/
125
135
––
Volts
Collector – Cutoff Current
VCE = 125 V; VBE = 1.5 V
VCE = 125 V; VBE = 1.5 V; T= 150ºC
ICEX 3/
––
0.020
—
10
1
µA
mA
Collector – Cutoff Current
VCB = 180 V
ICBO1 3/
––
0.020
10
uA
VEB = 6 V
IEBO 3/
––
0.001
100
uA
VCE = 2V, IC = 500mA
VCE = 2V, IC = 10A
VCE = 2V, IC = 25A
3/
hFE1
hFE2 3/
hFE3
50
30
12
120
185
120
––
220
––
Collector – Emitter Saturation
Voltage*
IC = 10A, IB = 1 A
IC = 25A, IB = 2.5A
VCE(Sat)
––
––
0.35
0.93
1.0
1.8
Volts
Base – Emitter Saturation
Voltage *
IC = 10A, IB = 1A
IC = 25A, IB = 2.5A
VB E(Sat)
––
––
1.13
1.73
1.8
2.5
Volts
Emitter – Cutoff Current
DC Current Gain *
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0101A
––
Doc
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
2SPT6341SD
www.ssdi-power.com
[email protected]
Electrical Characteristic 4/
Symbol
Min
Typ
Max
Units
Current Gain Bandwidth
Product
VCE = 10V, IC = 1A, f = 10MHz
fT
4
6.5
––
MHz
Output Capacitance
VCB = 10V, IE = 0A, f = 100kHz
cob
––
220
300
pF
tr
––
60
300
nsec
Storage Time
tS
––
2000
2500
nsec
Fall Time
tf
––
110
250
nsec
Switching
Time
Rise Time
VCC = 80V, IC = 10A, IB1 = IB2 = 1A
NOTES:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%
1/ For Ordering Information, Price, Availability Contact
Factory.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
2/ Screening per MIL-PRF-19500 available
3/ 100% die probe tests.
4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC
as applies to Die in TO-3 Package
DATA SHEET #: TR0101A
Doc