2SPT6341SD Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com MultiEpitaxial Planar NPN Power Transistor Die DESIGNER’S DATA SHEET .170 .011 Features: • Recommended replacement for the 2N6338 – 6341 series • Die Size: 170 x 180 Mils • Die Thickness: 260 – 330 µm • Bonding Area: Emitter: 30 x 60 Mils Base: 40 x 50 Mils • Maximum Recommended Wire Bonding: Emitter: Al (15 Mils Dia) Base: Al (15 Mils Dia) • Metallization: Top: 60,000Å Al Bottom: 5,500Å Au / Cr / Ni / Au E .180 B Maximum Ratings 4/ Symbol Value Units Collector – Emitter Voltage VCEO 125 Volts Collector – Base Voltage VCBO 180 Volts Emitter – Base Voltage VEBO 6 Volts Continuous Collector Current Peak Collector Current IC IC max 25 50 Amps Continuous Base Current IB 10 Amps Power Dissipation @ TC = 25ºC Derate above 25ºC PD 200 1.143 W W/ºC Top & Tstg -65 to +200 ºC RθJC 0.875 ºC/W Operating & Storage Temperature Junction to Case Maximum Thermal Resistance Electrical Characteristic 4/ Collector – Emitter Breakdown Voltage IC = 50mA Symbol Min Typ Max Units BVCEO 3/ 125 135 –– Volts Collector – Cutoff Current VCE = 125 V; VBE = 1.5 V VCE = 125 V; VBE = 1.5 V; T= 150ºC ICEX 3/ –– 0.020 — 10 1 µA mA Collector – Cutoff Current VCB = 180 V ICBO1 3/ –– 0.020 10 uA VEB = 6 V IEBO 3/ –– 0.001 100 uA VCE = 2V, IC = 500mA VCE = 2V, IC = 10A VCE = 2V, IC = 25A 3/ hFE1 hFE2 3/ hFE3 50 30 12 120 185 120 –– 220 –– Collector – Emitter Saturation Voltage* IC = 10A, IB = 1 A IC = 25A, IB = 2.5A VCE(Sat) –– –– 0.35 0.93 1.0 1.8 Volts Base – Emitter Saturation Voltage * IC = 10A, IB = 1A IC = 25A, IB = 2.5A VB E(Sat) –– –– 1.13 1.73 1.8 2.5 Volts Emitter – Cutoff Current DC Current Gain * NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0101A –– Doc Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 2SPT6341SD www.ssdi-power.com [email protected] Electrical Characteristic 4/ Symbol Min Typ Max Units Current Gain Bandwidth Product VCE = 10V, IC = 1A, f = 10MHz fT 4 6.5 –– MHz Output Capacitance VCB = 10V, IE = 0A, f = 100kHz cob –– 220 300 pF tr –– 60 300 nsec Storage Time tS –– 2000 2500 nsec Fall Time tf –– 110 250 nsec Switching Time Rise Time VCC = 80V, IC = 10A, IB1 = IB2 = 1A NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% 1/ For Ordering Information, Price, Availability Contact Factory. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. 2/ Screening per MIL-PRF-19500 available 3/ 100% die probe tests. 4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC as applies to Die in TO-3 Package DATA SHEET #: TR0101A Doc