SPT35P3 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 4 AMPS 60 VOLTS DUAL NPN DARLINGTON TRANSISTOR Designer’s Data Sheet • • • • • • • • • FEATURES: Cost-Saving Monolithic Design with Associated Commutating Diodes in A Single Package: Reduced Size, Improved Efficiency High Current Gain Low Saturation Voltage High Energy Capability Electrically Isolated Case Hermetically Sealed 8 Pin TO-3 Package High Current Replacement for PIC6006 TX, TXV, and S-Level Screening Available. Consult Factory. TO-3, 8 Leads APPLICATIONS: Full Wave Bridge Circuits for Converters and StepperMotor Drives MAXIMUM RATINGS Symbol Value Units Collector – Emitter Voltage VCEO 60 Volts Collector – Base Voltage VCBO 60 Volts IC ICM 4 8 Amps IB 0.2 Amps IO 2 Amps PD 60 30 Watts TJ & Tstg -65 to +175 Continuous Peak Collector Current Base Current Diode Average Forward Current o Total Device Dissipation @ TC = 25 C Per Darlington Operating and Storage Temperature Per Device Thermal Resistance, Junction to Case Per Transistor 2.5 RθJC 5.0 o o C C/W SCHEMATIC 1 2 7 8 3 6 6K 6K 150 150 4 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. 5 DATA SHEET #: TR0080D DOC SPT35P3 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com ELECTRICAL CHARACTERISTICS (Per Darlington) Collector – Emitter Sustaining Voltage * (Each Darlington) Symbol Min Max Unit IC = 10 mA BVCEO 60 –– Volts IC = 1 mA BVCBO 60 –– Volts ICEO –– –– 0.1 200 µA 1.5 mA Collector – Base Breakdown Voltage * o Collector Cutoff Current (VCE = 40 V) TC = 25 C o TC = 150 C Emitter Cutoff Current (VBE = 5 V) IEBO o DC Current Gain * (VCE = 5 V) IC = 2 A, TA = 25 C o IC = 0.4 A, TA = -55 C 2000 100 –– –– Collector – Emitter Saturation Voltage * IC = 2 A, IB = 4 mA VCE(SAT) –– 1.5 Volts Base – Emitter Saturation Voltage * IC = 2 A, IB = 4 mA VBE (SAT) –– 2.0 Volts Symbol Min Max Unit BVR 60 –– Volts VR = 40 V o VR = 40 V, TC = 100 C IR1 IR2 –– –– 0.5 500 µA µA IF = 2 A VF –– 1.5 Volts IF = 0.5 A, IR = 0.5 A, IRR = 0.25 A tRR –– 2 µs Commutating Diodes (Per Darlington) IR = 100 µA Break Down Voltage Reverse Leakage Current Forward Voltage Drop Reverse Recovery Time • hFE Pulse Test: Pulse Width = 300 µsec max, Duty Cycle = 2% max PACKAGE OUTLINE: TO-3 (8 Pins) R.525 MAX .135 MAX 40° REF Ø.505 .495 LEAD CIRCLE R.188 MAX 6 7 Ø.875 MAX 5 4 3 2 8 1 80° REF 2x Ø.165 .151 .310 .275 .460 .215 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. 8x Ø.043 .037 1.197 1.177 DATA SHEET #: TR0080D DOC