SFT10000/3 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 20 AMP NPN DARLINGTON TRANSISTOR DESIGNER’S DATA SHEET 350 VOLTS Part Number / Ordering Information 1/ SFT10000 __ __ │ └ Screening 2/ │ __ = Not Screened │ TX = TX Level │ TXV = TXV Level │ S = S Level │ └ Package /3 = TO-3 Features: BVCEO 350 Volts Low Saturation Voltage 200oC Operating Temperature Hermetically Sealed, Isolated Package TX, TXV, S-Level Screening Available. Consult Factory. Application Notes: SFT10000 Darlington Transistor is a direct replacement of Motorola MJ1000. It is designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applications such as: Switching Regulators Inverters Solenoid and Relay Drives Motor Controls Deflection Circuits Maximum Ratings Symbol Value Units Collector – Emitter Voltage VCEO 350 Volts Collector – Emitter Voltage VCEV 450 Volts Emitter – Base Voltage VEB 8 Volts IC ICM 20 30 Amps IB 2.5 Amps PD 175 100 1 Watts Watts W/ºC TJ & TSTG -65 to +200 ºC R0JC 1 ºC/W Collector Current Continuous Peak Base Current Total Power Dissipation Derate above 50ºC @ TC = 25ºC @ TC = 100ºC Operating & Storage Temperature Maximum Thermal Resistance (Junction to Case) NOTES: TO-3(/3) 1/ For ordering information, price, operating curves, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0011B DOC SFT10000/3 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristics Symbol Min Max Units Collector – Emitter Sustaining Voltage (IC = 250 mA, IB = 0, VCLAMP = Rated VCEO) VCEO(sus) 80 –– Volts VCEX(sus) 400 275 –– –– Volts ICBO –– –– 0.25 5.0 mA Collector Cutoff Current (VCEV = Rated VCEV, RBE = 50Ω, TC = 100ºC ) ICEV –– 5 mA Emitter Cutoff Current (VEB = 8V, IC = 0) IEBO –– 150 mA HFE 50 40 600 400 IC = 10A, IB = 400mA, TC = 25ºC IC = 20A, IB = 1A, TC = 25ºC IC = 10A, IB = 400mA, TC = 100ºC VCE (SAT) –– –– –– 1.9 3.0 2.0 Volts TC = 25ºC TC = 100ºC VBE (SAT) –– –– 2.5 2.5 Volts Diode Forward Voltage (IF = 10A) VF –– 5.0 Volts Small Signal Current Gain (IC = 1A, VCE = 10V, f = 1MHz) HFE 10 –– Output Capacitance (VCB = 30V, IE = 0A, f = 2.0MHz) Cob 100 325 pF IC = 2A IC = 10A Collector – Emitter Sustaining Voltage (VCLAMP = Rated VCEX, TC = 100ºC) TC = 25ºC TC = 100ºC Collector Cutoff Current (VCE = Rated Value, VBE(off) = 1.5V) IC = 5A IC = 10A DC Current Gain* (VCE = 5V) Collector-Emitter Saturation Voltage* Base-Emitter Saturation Voltage* (IC = 10A, IB = 400mA) Delay Time Rise Time Storage Time VCC = 250V, IC = 10A, IB1 = IB2 = 400 mA, VBE (off) = 5V, tp = 50s, Duty Cycle ≤ 2% Fall Time Storage Time Crossover Time IC = 10A(pk), VCLAMP = Rated VCEX, IB1 = 400 mA, VBE (off) = 5V, TC = 100ºC t(on) td tr –– –– 0.2 0.6 µs µs t(off) ts tf –– –– 3.5 2.4 μs µs tsv –– 5.5 µs tc –– 3.7 µs NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% CASE OUTLINE: TO-3 Pin Out: Case – Collector 1 – Base 2 – Emitter NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0011B DOC