SFT1192S.5 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 2 AMP 500 VOLTS PNP TRANSISTOR DESIGNER’S DATA SHEET FEATURES: • • • • • • BVCEO 400 V minimum Fast Switching: 250 ns max t(on) High Frequency: minimum 50 MHz Low Saturation Voltage 200oC Operating, Gold Eutectic Die Attach Designed for Complementary Use with SFT6800 MAXIMUM RATINGS SMD.5 Symbol Value Units Collector – Emitter Voltage VCEO 400 Volts Collector – Base Voltage VCBO 500 Volts Emitter – Base Voltage VCEO 10 Volts Collector Current IC 2 Amps Base Current IB 0.5 Amps PD 5 200 W mW/ºC TJ & TSTG -65 to +200 ºC RθJC 5.0 ºC/W o Total Device Dissipation @ TC = 175 C Derate above 175oC Operating and Storage Temperature Range Thermal Resistance, Junction to Case FIGURE 1: OUTLINE AND DIMENSIONS .304 .288 3x .020 .010 .030 MIN .030 MIN 2x .103 .087 .128 .112 .408 .392 .233 .217 2x .010 MAX .304 .288 All dimensions are in inches Tolerances: (unless otherwise specified) XX: ±0.01” XXX: ±0.005” PACKAGE OUTLINE: SMD.5 PINOUT: Pin 1: Collector Pin 2: Emitter Pin 3: Base .135 .115 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0082A DOC Solid State Devices, Inc. SFT1192S.5 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com ELECTRICAL CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 5 mA) Collector – Base Breakdown Voltage (IC = 100 µADC Emitter – Base Breakdown Voltage (IE = 20 µADC) Collector Cutoff Current (VCB = 450 VDC) Collector Cutoff Current (VCE = 400 VDC, VEB = 1.5 VDC) Emitter Cutoff Current (VEB = 6 VDC) (IC = 1.0 mADC) (IC = 50 mADC) (IC = 500 mADC) DC Current Gain* (VCE = 10 VDC) Collector – Emitter Saturation Voltage* (IC = 50 mADC, IB = 5 mADC) (IC = 500 mADC, IB = 50 mADC) Base – Emitter Saturation Voltage* (IC = 50 mADC, IB = 5 mADC) (IC = 500 mADC, IB = 50 mADC) Current Gain Bandwidth Product (IC = 70 mADC, VCE = 30 VDC , f = 20 MHz) Output Capacitance (VCB = 20 VDC, IE = 0 ADC , f = 1.0 MHz) Input Capacitance (VEB = 2 VDC, Ic = 0 ADC , f = 1.0 MHz) Turn On Time Turn Off Time (VCC = 100 VDC, IC = 500 mADC , VEB(OFF) = 3.7 VDC IB1 = IB2 = 50 mADC Symbol Min Max Units BVCEO 400 –– V BVCBO 500 –– V BVEBO 10 –– V ICBO –– 1.0 µA ICEV –– 10 µA IEBO –– 10 µA HFE 80 60 40 –– –– –– VCE (SAT) –– 0.4 1.0 VDC VBE (SAT) –– 1.5 2.0 VDC fT 50 –– MHz Cob –– 75 pf Cib –– 300 pf t(on) –– 250 ns t(off) –– 2500 ns * Pulse Test: Pulse Width = 300 µsec, Duty Cycle = 2% For thermal derating curves and other characteristic curves please contact SSDI Marketing Department. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0082A DOC