TM Ultra FRFET FDD5N50U tm N-Channel MOSFET, FRFET 500V, 3A, 2.0Ω Features Description • RDS(on) = 1.65Ω ( Typ.)@ VGS = 10V, ID = 1.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DOMS technology. • Low gate charge ( Typ. 11nC) • Low Crss ( Typ. 5pF) This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutationmode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant D D G G S D-PAK S MOSFET Maximum Ratings TC = 25 C unless otherwise noted* o Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current -Continuous (TC = 25oC) Units V ±30 V 3 -Continuous (TC = 100oC) - Pulsed Ratings 500 A 1.8 IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 3 A EAR Repetitive Avalanche Energy (Note 1) 4 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL - Derate above 25oC (Note 1) 12 A (Note 2) 275 mJ 40 W 0.3 W/oC -55 to +150 o C 300 o C Thermal Characteristics Symbol Parameter Ratings RθJC Thermal Resistance, Junction to Case 1.4 RθJA Thermal Resistance, Junction to Ambient 110 ©2007 Fairchild Semiconductor Corporation FDD5N50U Rev. A 1 Units o C/W www.fairchildsemi.com FDD5N50U N-Channel MOSFET, FRFET December 2007 Device Marking FDD5N50U Device FDD5N50UTM Package D-PAK Reel Size 380mm Tape Width 16mm Quantity 2500 FDD5N50U FDD5N50UTF D-PAK 380mm 16mm 2000 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units ID = 250µA, VGS = 0V, TJ = 25oC 500 - - V ID = 250µA, Referenced to 25oC - 0.6 - V/oC VDS = 500V, VGS = 0V Off Characteristics BVDSS ∆BVDSS ∆TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current - - 25 VDS = 400V, TC = 125oC - - 250 VGS = ±30V, VDS = 0V - - ±100 µA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250µA 3 - 5 V Static Drain to Source On Resistance VGS = 10V, ID = 1.5A - 1.65 2 Ω gFS Forward Transconductance VDS = 20V, ID = 1.5A - 4 - S - 485 650 pF - 65 90 pF (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 400V, ID = 5A VGS = 10V (Note 4, 5) - 5 8 pF - 11 15 nC - 3 - nC - 5 - nC - 14 38 ns - 21 52 ns - 27 64 ns - 20 50 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 250V, ID = 5A RG = 25Ω (Note 4, 5) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 3 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 12 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 3A - - 1.6 V trr Reverse Recovery Time - 36 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 5A dIF/dt = 100A/µs - 33 - nC (Note 4) Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 61mH, IAS = 3A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3: ISD ≤ 3A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDD5N50U Rev. A 2 www.fairchildsemi.com FDD5N50U N-Channel MOSFET, FRFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Figure 2. Transfer Characteristics 10 10 VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 1 o 150 C ID,Drain Current[A] ID,Drain Current[A] Figure 1. On-Region Characteristics 0.1 o 25 C 1 *Notes: 1. 250µs Pulse Test *Notes: 1. VDS = 20V 2. 250µs Pulse Test o 0.02 0.1 2. TC = 25 C 0.1 1 10 VDS,Drain-Source Voltage[V] 30 5 6 7 VGS,Gate-Source Voltage[V] 8 2.6 30 IS, Reverse Drain Current [A] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature RDS(ON) [Ω], Drain-Source On-Resistance Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2.2 VGS = 10V VGS = 20V 1.8 o 1.4 *Note: TJ = 25 C 0 6 12 ID, Drain Current [A] 18 Figure 5. Capacitance Characteristics 600 400 *Notes: 1. VGS = 0V 2. 250µs Pulse Test 1.0 1.6 VSD, Body Diode Forward Voltage [V] 2.2 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Ciss o 25 C Figure 6. Gate Charge Characteristics *Note: 1. VGS = 0V 2. f = 1MHz Coss 200 VGS, Gate-Source Voltage [V] 800 o 150 C 10 1 0.4 1000 Capacitances [pF] 4 VDS = 100V VDS = 250V VDS = 400V 8 6 4 2 Crss 0 0.1 FDD5N50U Rev. A 1 10 VDS, Drain-Source Voltage [V] 0 30 3 *Note: ID = 5A 0 4 8 Qg, Total Gate Charge [nC] 12 www.fairchildsemi.com FDD5N50U N-Channel MOSFET, FRFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. Maximum Safe Operating Area 20 40µs 10 100µs ID, Drain Current [A] BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 1ms 1 10ms 0.1 *Notes: o 1. TC = 25 C *Notes: 1. VGS = 0V 2. ID = 250µA 0.8 -75 -25 25 75 125 o TJ, Junction Temperature [ C] DC Operation in This Area is Limited by R DS(on) o 0.01 175 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 9. Maximum Drain Current vs. Case Temperature 3.5 ID, Drain Current [A] 3 2 1 0 25 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 10. Transient Thermal Response Curve Thermal Response [ZθJC] 3 1 0.5 0.2 0.1 t1 0.05 0.02 0.01 0.01 t2 *Notes: o 1. ZθJC(t) = 1.4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.005 -5 10 FDD5N50U Rev. A PDM 0.1 -4 10 -3 -2 -1 10 10 10 Rectangular Pulse Duration [sec] 4 0 10 1 10 www.fairchildsemi.com FDD5N50U N-Channel MOSFET, FRFET Typical Performance Characteristics (Continued) FDD5N50U N-Channel MOSFET, FRFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDD5N50U Rev. A 5 www.fairchildsemi.com FDD5N50U N-Channel MOSFET, FRFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) G S G S am e T ype as DUT V DD • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/ d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v / d t V V SD DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDD5N50U Rev. A 6 www.fairchildsemi.com FDD5N50U N-Channel MOSFET, FRFET Mechanical Dimensions D-PAK Dimensions in Millimeters FDD5N50U Rev. A 7 www.fairchildsemi.com The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EZSWITCH™ * FPS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ™ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * tm ® tm PDP-SPM™ Power220® Power247® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ ® The Power Franchise® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 2. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I32 FDD5N50U Rev. A 8 www.fairchildsemi.com FDD5N50U N-Channel MOSFET, FRFET TRADEMARKS