FDMS7692 N-Channel PowerTrench® MOSFET 30 V, 7.5 mΩ Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 13 mΩ at VGS = 4.5 V, ID = 10 A Advanced Package and Silicon combination for low rDS(on) and high efficiency Next generation enhanced body diode technology, engineered for soft recovery. Applications MSL1 robust package design IMVP Vcore Switching for Notebook 100% UIL tested VRM Vcore Switching for Desktop and Server RoHS Compliant OringFET / Load Switch DC-DC Conversion Bottom Top S D D D Pin 1 S S G D 5 4 G D 6 3 S D 7 2 S D 8 1 S D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C PD TJ, TSTG Units V ±20 V 28 47 (Note 1a) -Pulsed 14 A 50 Single Pulse Avalanche Energy EAS Ratings 30 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 21 27 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 4.6 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS7692 Device FDMS7692 ©2011 Fairchild Semiconductor Corporation FDMS7692 Rev.D1 Package Power 56 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS7692 N-Channel PowerTrench® MOSFET August 2011 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA 3.0 V 30 V 13 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.2 2.0 -6 mV/°C VGS = 10 V, ID = 13 A 6.5 7.5 VGS = 4.5 V, ID = 10 A 9.5 13 VGS = 10 V, ID = 13 A, TJ = 125 °C 9.0 11 VDS = 5 V, ID = 13 A 68 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 1015 1350 pF 325 435 pF 45 65 pF 1.0 2.0 Ω ns Switching Characteristics 8 16 2.7 10 ns 17 31 ns td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time 2.3 10 ns Qg Total Gate Charge VGS = 0 V to 10 V 15 22 nC Qg Total Gate Charge 10 Gate to Source Charge VGS = 0 V to 4.5 V VDD = 15 V, ID = 13 A 7 Qgs 3.4 nC Qgd Gate to Drain “Miller” Charge 1.9 nC VDD = 15 V, ID = 13 A, VGS = 10 V, RGEN = 6 Ω nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2.1 A (Note 2) 0.75 1.1 VGS = 0 V, IS = 13 A (Note 2) 0.84 1.2 IF = 13 A, di/dt = 100 A/μs IF = 13 A, di/dt = 300 A/μs V 21 34 ns 6 12 nC 17 31 ns 12 21 nC Notes: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 50 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C, L = 0.3 mH, IAS = 12 A, VDD = 27 V, VGS = 10 V. ©2011 Fairchild Semiconductor Corporation FDMS7692 Rev.D1 2 www.fairchildsemi.com FDMS7692 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted VGS = 10 V ID, DRAIN CURRENT (A) 40 VGS = 4.5 V VGS = 4.0 V 30 VGS = 3.5 V 20 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 10 VGS = 3.0 V 0 0.0 10 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 50 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 6 VGS = 3.5 V 4 VGS = 4.0 V 2 VGS = 4. 5 V 0 0.5 1.0 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 2.0 0 20 VGS = 10 V 30 40 50 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 1.5 rDS(on), DRAIN TO 1.4 1.3 1.2 1.1 1.0 0.9 0.8 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (mΩ) 30 ID = 13 A VGS = 10 V ID = 13 A 20 15 TJ = 125 oC 10 TJ = 25 oC 5 100 125 150 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 25 2 TJ, JUNCTION TEMPERATURE (oC) 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 50 100 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 40 ID, DRAIN CURRENT (A) 10 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 3.0 V 8 VDS = 5 V 30 TJ = 150 oC 20 TJ = 25 oC 10 TJ = -55 oC 0 1 2 3 4 VGS = 0 V 10 TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.2 5 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2011 Fairchild Semiconductor Corporation FDMS7692 Rev.D1 3 1.2 www.fairchildsemi.com FDMS7692 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2000 ID = 13 A 1000 8 VDD = 15 V 6 VDD = 10 V Ciss CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 20 V 4 Coss 100 2 0 0 4 8 12 10 0.1 16 1 Figure 7. Gate Charge Characteristics 30 Figure 8. Capacitance vs Drain to Source Voltage 50 ID, DRAIN CURRENT (A) 50 IAS, AVALANCHE CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 40 30 VGS = 10 V 20 Limited by Package VGS = 4.5 V 10 o RθJC = 4.6 C/W 1 0.001 0.01 0.1 1 10 0 25 100 50 100 us 1 10 ms P(PK), PEAK TRANSIENT POWER (W) 10 1 ms 100 ms 1s SINGLE PULSE TJ = MAX RATED 10 s RθJA = 125 oC/W DC o TA = 25 C 0.01 0.01 0.1 1 10 150 300 VGS = 10 V 100 200 SINGLE PULSE RθJA = 125 oC/W 100 TA = 25 oC 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDMS7692 Rev.D1 125 Figure 10. Maximum Continuous Drain Current vs Case Temperature 100 0.1 100 o Figure 9. Unclamped Inductive Switching Capability THIS AREA IS LIMITED BY rDS(on) 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) Crss f = 1 MHz VGS = 0 V Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS7692 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 0.001 -4 10 -3 -2 10 -1 10 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve Figure 15. 14 12 CURRENT (A) 10 8 di/dt = 300 A/μs 6 4 2 0 -2 0 20 40 60 80 100 TIME (ns) Figure 14. Body Diode Reverse Recovery Characteristics ©2011 Fairchild Semiconductor Corporation FDMS7692 Rev.D1 5 www.fairchildsemi.com FDMS7692 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDMS7692 N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDMS7692 Rev.D1 6 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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