FDMS3500 tm ® N-Channel Power Trench MOSFET 75V, 49A, 14.5mΩ Features General Description Max rDS(on) = 14.5mΩ at VGS = 10V, ID = 11.5A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 16.3mΩ at VGS = 4.5V, ID = 10A Advanced Package and Silicon combination for low rDS(on) MSL1 robust package design 100% UIL Tested Application RoHS Compliant DC - DC Conversion Bottom Top S D D D Pin 1 S S G D 5 4 G D 6 3 S D 7 2 S D 8 1 S D Power 56 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25°C -Continuous (Silicon limited) TC = 25°C -Continuous TA = 25°C PD TJ, TSTG Units V ±20 V 49 57 (Note 1a) -Pulsed 9.2 A 100 Single Pulse Avalanche Energy EAS Ratings 75 (Note 3) Power Dissipation TC = 25°C Power Dissipation TA = 25°C 384 96 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1.3 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS3500 Device FDMS3500 ©2008 Fairchild Semiconductor Corporation FDMS3500 Rev.C Package Power 56 1 Reel Size 13’’ Tape Width 12mm Quantity 3000 units www.fairchildsemi.com FDMS3500 N-Channel Power Trench® MOSFET April 2008 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250μA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VGS = 0V, VDS = 60V, 1 μA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA 3.0 V 75 V 71 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250μA, referenced to 25°C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.0 1.8 -6.8 mV/°C VGS = 10V, ID = 11.5A 11.1 14.5 VGS = 4.5V, ID = 10A 12.8 16.3 VGS = 10V, ID = 11.5A, TJ = 125°C 17.6 23.0 VDD = 5V, ID = 11.5A 56 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 40V, VGS = 0V, f = 1MHz f = 1MHz 3580 4765 pF 225 300 pF 120 175 pF Ω 1.2 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg 16 29 9 18 ns ns 48 77 ns VDD = 40V, ID = 11.5A, VGS = 10V, RGEN = 6Ω 6 11 ns Total Gate Charge VGS = 0V to 10V 65 91 nC Qg Total Gate Charge VGS = 0V to 5V 34 48 Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 40V, ID = 11.5A nC 9.9 nC 11.6 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 11.5A (Note 2) 0.8 1.3 VGS = 0V, IS = 2.1A (Note 2) 0.7 1.2 38 60 ns 45 72 nC IF = 11.5A, di/dt = 100A/μs V NOTES: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b. 125°C/W when mounted on a minimum pad of 2 oz copper. a. 50°C/W when mounted on a 1 in2 pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. 3. Starting TJ = 25°C, L = 3mH, IAS = 16A, VDD = 75V, VGS = 10V ©2008 Fairchild Semiconductor Corporation FDMS3500 Rev.C 2 www.fairchildsemi.com FDMS3500 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 3.0 VGS = 10V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 100 VGS = 4V ID, DRAIN CURRENT (A) 80 VGS = 3.5V VGS = 4.5V 60 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 40 VGS = 3V 20 0 0 1 2 2.5 VGS = 3.5V 2.0 VGS = 4V 1.5 1.0 0.5 3 0 20 40 60 80 100 ID, DRAIN CURRENT(A) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 40 ID = 11.5A VGS = 10V 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10V VGS = 4.5V VDS, DRAIN TO SOURCE VOLTAGE (V) ID = 11.5A PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 30 TJ = 125oC 20 10 TJ = 25oC 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 100 100 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 80 ID, DRAIN CURRENT (A) PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX VGS = 3V VDS = 5V 60 TJ = 150oC 40 TJ = 25oC 20 TJ = -55oC 0 0 1 2 3 4 VGS = 0V 10 TJ = 150oC 1 TJ = 25oC TJ = -55oC 0.1 0.01 0.001 0.0 5 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2008 Fairchild Semiconductor Corporation FDMS3500 Rev.C 3 1.2 www.fairchildsemi.com FDMS3500 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 10000 ID = 11.5A 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 40V 6 VDD = 30V VDD = 50V 4 Ciss 1000 Coss 100 2 30 0.1 0 0 10 20 30 40 50 60 70 1 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 60 ID, DRAIN CURRENT (A) 20 IAS, AVALANCHE CURRENT(A) 75 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) 10 TJ = 25oC TJ = 125oC 50 40 VGS = 10V Limited by Package 30 VGS = 4.5V 20 10 o RθJC = 1.3 C/W 1 0.01 0.1 1 10 100 0 25 400 50 tAV, TIME IN AVALANCHE(ms) 100 125 150 o Figure 10. Maximum Continuous Drain Current vs Case Temperature 400 1000 THIS AREA IS LIMITED BY rDS(on) 10 P(PK), PEAK TRANSIENT POWER (W) 100 75 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) Crss f = 1MHz VGS = 0V 1ms 10ms 1 0.1 0.01 0.01 100ms SINGLE PULSE TJ = MAX RATED RθJA = 125oC/W 1s TA = 25oC 10s DC 0.1 1 10 100 300 SINGLE PULSE RθJA = 125oC/W TA = 25oC 100 10 1 0.5 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2008 Fairchild Semiconductor Corporation FDMS3500 Rev.C VGS = 10V Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS3500 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 125 C/W 0.001 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve ©2008 Fairchild Semiconductor Corporation FDMS3500 Rev.C 5 www.fairchildsemi.com FDMS3500 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMS3500 N-Channel Power Trench® MOSFET Dimensional Outline and Pad Layout ©2008 Fairchild Semiconductor Corporation FDMS3500 Rev.C 6 www.fairchildsemi.com The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * FPS™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * ® PDP-SPM™ Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world 1mW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SuperMOS™ ® The Power Franchise® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ tm * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 ©2008 Fairchild Semiconductor Corporation FDMS3500 Rev.C www.fairchildsemi.com FDMS3500 N-Channel Power Trench® MOSFET TRADEMARKS