IRF IRFI4020H-117P

PD - 97252
DIGITAL AUDIO MOSFET
IRFI4020H-117P
Key Parameters g
Features
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Integrated half-bridge package
Reduces the part count by half
Facilitates better PCB layout
Key parameters optimized for Class-D
audio amplifier applications
Low RDS(ON) for improved efficiency
Low Qg and Qsw for better THD and
improved efficiency
Low Qrr for better THD and lower EMI
Can delivery up to 300W per channel into
8Ω load in half-bridge configuration
amplifier
Lead-free package
VDS
RDS(ON) typ. @ 10V
Qg typ.
Qsw typ.
RG(int) typ.
TJ max
200
80
19
6.8
3.0
150
V
m:
nC
nC
Ω
°C
G1
D1
S1/D2
G2
S2
TO-220 Full-Pak 5 PIN
G1, G2
D1, D2
S1, S2
Gate
Drain
Source
Description
This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It
consists of two power MosFET switches connected in half-bridge configuration. The latest process is used
to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery,
and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors
such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and
reliable device for Class D audio amplifier applications.
Absolute Maximum Ratings
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
EAS
TJ
TSTG
g
Parameter
Max.
Units
Drain-to-Source Voltage
200
V
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
±20
9.1
A
Power Dissipation
Power Dissipation
21
8.5
W
0.17
130
W/°C
mJ
-55 to + 150
°C
f
f
5.7
36
c
Linear Derating Factor
Single Pulse Avalanche Energy
d
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθJA
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g
Junction-to-Case
f
Parameter
Junction-to-Ambient (free air)
300
x
x
10lb in (1.1N m)
Typ.
–––
Max.
5.9
–––
65
Units
°C/W
1
08/22/06
IRFI4020H-117P
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
g
Min.
Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
200
–––
–––
∆ΒVDSS/∆TJ
RDS(on)
VGS(th)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
–––
24
80
–––
100
mV/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 5.5A
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
3.0
–––
–––
-12
4.9
–––
V VDS = VGS, ID = 100µA
mV/°C
Drain-to-Source Leakage Current
–––
–––
–––
–––
20
250
µA
VDS = 200V, VGS = 0V
VDS = 200V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
–––
–––
100
-100
nA
VGS = 20V
VGS = -20V
gfs
Forward Transconductance
Total Gate Charge
11
–––
–––
19
–––
29
S
VDS = 50V, ID = 5.5A
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
–––
–––
4.9
0.95
–––
–––
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
–––
–––
5.8
7.4
–––
–––
Internal Gate Resistance
–––
–––
6.8
3.0
–––
–––
Turn-On Delay Time
Rise Time
–––
–––
8.4
8.0
–––
–––
Turn-Off Delay Time
Fall Time
–––
–––
18
4.0
–––
–––
Input Capacitance
Output Capacitance
–––
–––
1240
130
–––
–––
Reverse Transfer Capacitance
Effective Output Capacitance
–––
–––
28
110
–––
–––
Internal Drain Inductance
–––
4.5
–––
∆VGS(th)/∆TJ
IDSS
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
RG(int)
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff.
LD
V
e
nC
Internal Source Inductance
–––
7.5
VDS = 100V
VGS = 10V
ID = 5.5A
See Fig. 6 and 15
Ω
e
VDD = 100V, VGS = 10V
ID = 5.5A
ns
RG = 2.4Ω
pF
VGS = 0V
VDS = 25V
ƒ = 1.0MHz,
See Fig.5
VGS = 0V, VDS = 0V to 160V
Between lead,
nH
LS
Conditions
VGS = 0V, ID = 250µA
–––
D
6mm (0.25in.)
from package
G
S
and center of die contact
Diode Characteristics
g
Parameter
Min.
Typ. Max. Units
–––
–––
9.1
(Body Diode)
Pulsed Source Current
–––
–––
36
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
–––
–––
–––
76
1.3
110
V
ns
Reverse Recovery Charge
–––
230
350
nC
IS @ TC = 25°C Continuous Source Current
ISM
VSD
trr
Qrr
c
Conditions
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 5.5A, VGS = 0V
TJ = 25°C, IF = 5.5A, VDD = 160V
di/dt = 100A/µs
e
e
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 8.6mH, RG = 25Ω, IAS = 5.5A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ Rθ is measured at TJ of approximately 90°C.
… Specifications refer to single MosFET.
2
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IRFI4020H-117P
100
100
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
10
6.0V
10
BOTTOM
6.0V
1
≤60µs PULSE WIDTH
≤60µs PULSE WIDTH
Tj = 150°C
Tj = 25°C
0.1
1
0.1
1
10
0.1
100
100
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
3.0
VDS = 50V
≤60µs PULSE WIDTH
T J = 150°C
10
TJ = 25°C
1
ID = 5.5A
VGS = 10V
2.5
2.0
(Normalized)
RDS(on) , Drain-to-Source On Resistance
ID, Drain-to-Source Current (A)
10
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
1.5
1.0
0.5
0.1
0.0
3
4
5
6
7
-60 -40 -20 0
Fig 3. Typical Transfer Characteristics
10000
Fig 4. Normalized On-Resistance vs. Temperature
12.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
VGS, Gate-to-Source Voltage (V)
ID= 5.5A
C oss = C ds + C gd
Ciss
1000
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
1
Coss
100
Crss
10.0
VDS= 160V
VDS= 100V
8.0
VDS= 40V
6.0
4.0
2.0
0.0
10
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
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0
5
10
15
20
25
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
IRFI4020H-117P
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
T J = 150°C
10
T J = 25°C
1
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
10
1
100µsec
0.1
1msec
0.01
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
0.001
VGS = 0V
0.1
0.0001
0.2
0.4
0.6
0.8
1.0
1.2
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
5.0
VGS(th) , Gate Threshold Voltage (V)
10
8
ID, Drain Current (A)
DC
6
4
2
4.5
4.0
ID = 100µA
3.5
3.0
2.5
2.0
0
25
50
75
100
125
-75 -50 -25
150
0
25
50
75 100 125 150
T J , Temperature ( °C )
T J , Junction Temperature (°C)
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs. Junction Temperature
10
Thermal Response ( Z thJC )
D = 0.50
1
0.20
0.10
0.05
0.1
0.01
0.001
1E-006
0.02
0.01
τJ
R1
R1
τJ
τ1
τ1
R2
R2
τ2
τ2
R3
R3
τ3
τC
τ
2.172
2.621
τ3
Ci= τi/Ri
Ci= i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
Ri (°C/W) τi (sec)
1.108
0.001041
0.148518
2.010100
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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300
600
EAS , Single Pulse Avalanche Energy (mJ)
RDS(on), Drain-to -Source On Resistance (m Ω)
IRFI4020H-117P
ID = 5.5A
275
250
225
200
T J = 125°C
175
150
125
T J = 25°C
100
75
50
ID
0.91A
1.1A
BOTTOM 5.5A
TOP
500
400
300
200
100
0
5
6
7
8
9
10
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
Fig 13a. Maximum Avalanche Energy vs. Drain Current
V(BR)DSS
15V
DRIVER
L
VDS
tp
D.U.T
RG
+
V
- DD
IAS
VGS
20V
A
0.01Ω
tp
I AS
Fig 13b. Unclamped Inductive Test Circuit
Fig 13c. Unclamped Inductive Waveforms
LD
VDS
VDS
90%
+
VDD -
10%
D.U.T
VGS
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
td(on)
Fig 14a. Switching Time Test Circuit
tr
td(off)
tf
Fig 14b. Switching Time Waveforms
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1 Qgs2
Fig 15a. Gate Charge Test Circuit
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Qgd
Qgodr
Fig 15b Gate Charge Waveform
5
IRFI4020H-117P
TO-220 Full-Pak 5-Pin Package Outline, Lead-Form Option 117
(Dimensions are shown in millimeters (inches))
TO-220 Full-Pak 5-Pin Part Marking Information
14
TO-220AB Full-Pak 5-Pin package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/2006
6
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