PD - 97254 DIGITAL AUDIO MOSFET IRFI4024H-117P Key Parameters g Features Integrated half-bridge package Reduces the part count by half Facilitates better PCB layout Key parameters optimized for Class-D audio amplifier applications Low RDS(ON) for improved efficiency Low Qg and Qsw for better THD and improved efficiency Low Qrr for better THD and lower EMI Can delivery up to 100W per channel into 6Ω load in full-bridge configuration amplifier Lead-free package VDS RDS(ON) typ. @ 10V Qg typ. Qsw typ. RG(int) typ. TJ max 55 48 8.9 4.3 2.3 150 V m: nC nC Ω °C TO-220 Full-Pak 5 PIN Description G1, G2 D1, D2 S1, S2 Gate Drain Source This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable device for Class D audio amplifier applications. Absolute Maximum Ratings g Parameter Max. Units Drain-to-Source Voltage 55 V Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ±20 Continuous Drain Current, VGS @ 10V Pulsed Drain Current c 6.9 IDM PD @TC = 25°C Power Dissipation 14 PD @TC = 100°C Power Dissipation 5.4 EAS Linear Derating Factor Single Pulse Avalanche Energyd 0.11 7.4 W/°C mJ TJ Operating Junction and -55 to +150 °C TSTG Storage Temperature Range VDS VGS ID @ TC = 25°C ID @ TC = 100°C Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw 11 A 44 W 300 (1.6mm from case) 10 lbf•in (1.1N•m) Thermal Resistance g Typ. Max. Units RθJC Junction-to-Case f Parameter ––– 9.21 °C/W RθJA Junction-to-Ambient (free air) ––– 65 www.irf.com 1 08/24/06 IRFI4024H-117P Electrical Characteristics @ TJ = 25°C (unless otherwise specified) g Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 55 ––– ––– ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 54 ––– RDS(on) Static Drain-to-Source On-Resistance ––– 48 60 V VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V Gate Threshold Voltage Coefficient ––– -9.17 ––– mV/°C IDSS Drain-to-Source Leakage Current µA IGSS ––– ––– 20 ––– 250 Gate-to-Source Forward Leakage ––– ––– 200 Gate-to-Source Reverse Leakage ––– ––– -200 gfs Forward Transconductance 6.5 ––– ––– Qg VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 7.7A e ∆VGS(th)/∆TJ ––– Conditions VDS = VGS, ID = 25µA VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V S VDS = 25V, ID = 7.7A nC VGS = 10V Total Gate Charge ––– 8.9 13 Qgs1 Pre-Vth Gate-to-Source Charge ––– 1.6 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 0.77 ––– Qgd Gate-to-Drain Charge ––– 3.5 ––– ID = 7.7A Qgodr ––– 3.0 ––– See Fig. 6 and 15 Qsw Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) ––– 4.3 ––– RG(int) Internal Gate Resistance ––– 2.3 ––– td(on) Turn-On Delay Time ––– 5.9 ––– tr td(off) Rise Time Turn-Off Delay Time ––– ––– 2.0 13 ––– ––– tf Fall Time ––– 3.4 ––– Ciss Input Capacitance ––– 320 ––– Coss Output Capacitance ––– 47 ––– Crss Reverse Transfer Capacitance ––– 31 ––– ƒ = 1.0MHz, LD Internal Drain Inductance ––– 4.5 ––– Between lead, LS Internal Source Inductance ––– 7.5 ––– VDS = 44V Ω VDD = 28V, VGS = 10Ve ns ID = 7.7A RG = 2.5Ω VGS = 0V pF nH VDS = 50V See Fig. 5 D 6mm (0.25in.) from package G S and center of die contact Diode Characteristics g Parameter IS @ TC = 25°C Continuous Source Current Min. Typ. Max. Units Conditions ––– ––– 11 ––– ––– 44 showing the integral reverse p-n junction diode. TJ = 25°C, IS = 7.7A, VGS = 0V e MOSFET symbol ISM (Body Diode) Pulsed Source Current A VSD (Body Diode)c Diode Forward Voltage ––– ––– 1.3 trr Reverse Recovery Time ––– 17 26 ns Qrr Reverse Recovery Charge ––– 11 17 nC D G S V TJ = 25°C, IF = 7.7A di/dt = 100A/µs e Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.25mH, RG = 25Ω, IAS = 7.7A. Pulse width ≤ 400µs; duty cycle ≤ 2%. Rθ is measured at TJ of approximately 90°C. Specifications refer to single MosFET. 2 www.irf.com IRFI4024H-117P 100 100 10 BOTTOM 1 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 4.5V 10 BOTTOM 4.5V 1 ≤60µs PULSE WIDTH ≤60µs PULSE WIDTH Tj = 150°C Tj = 25°C 0.1 0.1 0.1 1 10 100 1000 0.1 V DS, Drain-to-Source Voltage (V) 10 100 1000 Fig 2. Typical Output Characteristics 100 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (Α) 1 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 T J = 150°C T J = 25°C 1 VDS = 25V ≤60µs PULSE WIDTH 0.1 ID = 7.7A VGS = 10V 1.5 1.0 0.5 2 4 6 8 10 -60 -40 -20 0 Fig 3. Typical Transfer Characteristics 10000 Fig 4. Normalized On-Resistance vs. Temperature 12.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED ID= 7.7A VGS, Gate-to-Source Voltage (V) C rss = C gd C oss = C ds + C gd 1000 Ciss Coss 100 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance(pF) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V Crss 10.0 VDS= 44V VDS= 28V VDS= 11V 8.0 6.0 4.0 2.0 0.0 10 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage www.irf.com 0 2 4 6 8 10 QG Total Gate Charge (nC) Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage 3 IRFI4024H-117P 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 T J = 150°C 10 T J = 25°C 1 10 100µsec 1 0.1 Tc = 25°C Tj = 150°C Single Pulse VGS = 0V 0 0.01 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1 10 VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 12 VGS(th) Gate threshold Voltage (V) 4.0 10 ID, Drain Current (A) 100 8 6 4 2 3.5 3.0 ID = 25µA 2.5 2.0 1.5 1.0 0 25 50 75 100 125 -75 150 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) T C , Case Temperature (°C) Fig 10. Threshold Voltage vs. Temperature Fig 9. Maximum Drain Current vs. Case Temperature Thermal Response ( Z thJC ) 100 10 D = 0.50 0.20 1 0.1 0.10 0.05 0.02 0.01 τJ SINGLE PULSE ( THERMAL RESPONSE ) R1 R1 τJ τ1 R2 R2 τ2 τ1 R3 R3 R4 R4 τC τ τ3 τ2 τ3 τ4 τ4 Ci= τi/Ri Ci i/Ri Ri (°C/W) τi (sec) 0.8124 0.000034 2.5228 0.000535 2.7309 0.009731 3.1439 1.22140 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com 220 30 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m Ω) IRFI4024H-117P ID = 7.7A 180 140 T J = 125°C 100 60 T J = 25°C 20 ID TOP 1.8A 3.5A BOTTOM 7.7A 25 20 15 10 5 0 2 4 6 8 10 12 14 16 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage Fig 13a. Maximum Avalanche Energy vs. Drain Current V(BR)DSS 15V DRIVER L VDS tp D.U.T RG + V - DD IAS VGS 20V A 0.01Ω tp I AS Fig 13b. Unclamped Inductive Test Circuit LD Fig 13c. Unclamped Inductive Waveforms VDS VDS 90% + VDD - 10% D.U.T VGS VGS Pulse Width < 1µs Duty Factor < 0.1% td(on) Fig 14a. Switching Time Test Circuit tr td(off) tf Fig 14b. Switching Time Waveforms Id Vds Vgs L DUT 0 VCC Vgs(th) 1K Qgs1 Qgs2 Fig 15a. Gate Charge Test Circuit www.irf.com Qgd Qgodr Fig 15b Gate Charge Waveform 5 IRFI4024H-117P TO-220 Full-Pak 5-Pin Package Outline, Lead-Form Option 117 (Dimensions are shown in millimeters (inches)) TO-220 Full-Pak 5-Pin Part Marking Information 14 TO-220AB Full-Pak 5-Pin package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed for the Consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/05 6 www.irf.com