IRF IRFI4024H-117P

PD - 97254
DIGITAL AUDIO MOSFET
IRFI4024H-117P
Key Parameters g
Features
Ÿ
Ÿ
Ÿ
Ÿ
Ÿ
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Integrated half-bridge package
Reduces the part count by half
Facilitates better PCB layout
Key parameters optimized for Class-D
audio amplifier applications
Low RDS(ON) for improved efficiency
Low Qg and Qsw for better THD and
improved efficiency
Low Qrr for better THD and lower EMI
Can delivery up to 100W per channel into
6Ω load in full-bridge configuration
amplifier
Lead-free package
VDS
RDS(ON) typ. @ 10V
Qg typ.
Qsw typ.
RG(int) typ.
TJ max
55
48
8.9
4.3
2.3
150
V
m:
nC
nC
Ω
°C
TO-220 Full-Pak 5 PIN
Description
G1, G2
D1, D2
S1, S2
Gate
Drain
Source
This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It
consists of two power MosFET switches connected in half-bridge configuration. The latest process is used
to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery,
and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors
such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and
reliable device for Class D audio amplifier applications.
Absolute Maximum Ratings g
Parameter
Max.
Units
Drain-to-Source Voltage
55
V
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
±20
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
6.9
IDM
PD @TC = 25°C
Power Dissipation
14
PD @TC = 100°C
Power Dissipation
5.4
EAS
Linear Derating Factor
Single Pulse Avalanche Energyd
0.11
7.4
W/°C
mJ
TJ
Operating Junction and
-55 to +150
°C
TSTG
Storage Temperature Range
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
11
A
44
W
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Thermal Resistance g
Typ.
Max.
Units
RθJC
Junction-to-Case f
Parameter
–––
9.21
°C/W
RθJA
Junction-to-Ambient (free air)
–––
65
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08/24/06
IRFI4024H-117P
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) g
Parameter
Min.
Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
55
–––
–––
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
54
–––
RDS(on)
Static Drain-to-Source On-Resistance
–––
48
60
V
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
Gate Threshold Voltage Coefficient
–––
-9.17
–––
mV/°C
IDSS
Drain-to-Source Leakage Current
µA
IGSS
–––
–––
20
–––
250
Gate-to-Source Forward Leakage
–––
–––
200
Gate-to-Source Reverse Leakage
–––
–––
-200
gfs
Forward Transconductance
6.5
–––
–––
Qg
VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 7.7A e
∆VGS(th)/∆TJ
–––
Conditions
VDS = VGS, ID = 25µA
VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
S
VDS = 25V, ID = 7.7A
nC
VGS = 10V
Total Gate Charge
–––
8.9
13
Qgs1
Pre-Vth Gate-to-Source Charge
–––
1.6
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
0.77
–––
Qgd
Gate-to-Drain Charge
–––
3.5
–––
ID = 7.7A
Qgodr
–––
3.0
–––
See Fig. 6 and 15
Qsw
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
–––
4.3
–––
RG(int)
Internal Gate Resistance
–––
2.3
–––
td(on)
Turn-On Delay Time
–––
5.9
–––
tr
td(off)
Rise Time
Turn-Off Delay Time
–––
–––
2.0
13
–––
–––
tf
Fall Time
–––
3.4
–––
Ciss
Input Capacitance
–––
320
–––
Coss
Output Capacitance
–––
47
–––
Crss
Reverse Transfer Capacitance
–––
31
–––
ƒ = 1.0MHz,
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
LS
Internal Source Inductance
–––
7.5
–––
VDS = 44V
Ω
VDD = 28V, VGS = 10Ve
ns
ID = 7.7A
RG = 2.5Ω
VGS = 0V
pF
nH
VDS = 50V
See Fig. 5
D
6mm (0.25in.)
from package
G
S
and center of die contact
Diode Characteristics g
Parameter
IS @ TC = 25°C Continuous Source Current
Min.
Typ. Max. Units
Conditions
–––
–––
11
–––
–––
44
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 7.7A, VGS = 0V e
MOSFET symbol
ISM
(Body Diode)
Pulsed Source Current
A
VSD
(Body Diode)c
Diode Forward Voltage
–––
–––
1.3
trr
Reverse Recovery Time
–––
17
26
ns
Qrr
Reverse Recovery Charge
–––
11
17
nC
D
G
S
V
TJ = 25°C, IF = 7.7A
di/dt = 100A/µs e
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 0.25mH, RG = 25Ω, IAS = 7.7A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ Rθ is measured at TJ of approximately 90°C.
… Specifications refer to single MosFET.
2
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IRFI4024H-117P
100
100
10
BOTTOM
1
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
4.5V
10
BOTTOM
4.5V
1
≤60µs PULSE WIDTH
≤60µs PULSE WIDTH
Tj = 150°C
Tj = 25°C
0.1
0.1
0.1
1
10
100
1000
0.1
V DS, Drain-to-Source Voltage (V)
10
100
1000
Fig 2. Typical Output Characteristics
100
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (Α)
1
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
T J = 150°C
T J = 25°C
1
VDS = 25V
≤60µs PULSE WIDTH
0.1
ID = 7.7A
VGS = 10V
1.5
1.0
0.5
2
4
6
8
10
-60 -40 -20 0
Fig 3. Typical Transfer Characteristics
10000
Fig 4. Normalized On-Resistance vs. Temperature
12.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
ID= 7.7A
VGS, Gate-to-Source Voltage (V)
C rss = C gd
C oss = C ds + C gd
1000
Ciss
Coss
100
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance(pF)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
Crss
10.0
VDS= 44V
VDS= 28V
VDS= 11V
8.0
6.0
4.0
2.0
0.0
10
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
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0
2
4
6
8
10
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
IRFI4024H-117P
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T J = 150°C
10
T J = 25°C
1
10
100µsec
1
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
0
0.01
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
1
10
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
12
VGS(th) Gate threshold Voltage (V)
4.0
10
ID, Drain Current (A)
100
8
6
4
2
3.5
3.0
ID = 25µA
2.5
2.0
1.5
1.0
0
25
50
75
100
125
-75
150
-50
-25
0
25
50
75
100
125
150
T J , Temperature ( °C )
T C , Case Temperature (°C)
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs. Case Temperature
Thermal Response ( Z thJC )
100
10
D = 0.50
0.20
1
0.1
0.10
0.05
0.02
0.01
τJ
SINGLE PULSE
( THERMAL RESPONSE )
R1
R1
τJ
τ1
R2
R2
τ2
τ1
R3
R3
R4
R4
τC
τ
τ3
τ2
τ3
τ4
τ4
Ci= τi/Ri
Ci i/Ri
Ri (°C/W)
τi (sec)
0.8124
0.000034
2.5228
0.000535
2.7309
0.009731
3.1439
1.22140
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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220
30
EAS , Single Pulse Avalanche Energy (mJ)
RDS(on), Drain-to -Source On Resistance (m Ω)
IRFI4024H-117P
ID = 7.7A
180
140
T J = 125°C
100
60
T J = 25°C
20
ID
TOP
1.8A
3.5A
BOTTOM 7.7A
25
20
15
10
5
0
2
4
6
8
10
12
14
16
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
Fig 13a. Maximum Avalanche Energy vs. Drain Current
V(BR)DSS
15V
DRIVER
L
VDS
tp
D.U.T
RG
+
V
- DD
IAS
VGS
20V
A
0.01Ω
tp
I AS
Fig 13b. Unclamped Inductive Test Circuit
LD
Fig 13c. Unclamped Inductive Waveforms
VDS
VDS
90%
+
VDD -
10%
D.U.T
VGS
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
td(on)
Fig 14a. Switching Time Test Circuit
tr
td(off)
tf
Fig 14b. Switching Time Waveforms
Id
Vds
Vgs
L
DUT
0
VCC
Vgs(th)
1K
Qgs1 Qgs2
Fig 15a. Gate Charge Test Circuit
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Qgd
Qgodr
Fig 15b Gate Charge Waveform
5
IRFI4024H-117P
TO-220 Full-Pak 5-Pin Package Outline, Lead-Form Option 117
(Dimensions are shown in millimeters (inches))
TO-220 Full-Pak 5-Pin Part Marking Information
14
TO-220AB Full-Pak 5-Pin package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/05
6
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