FAIRCHILD FDS9933BZ

FDS9933BZ
tm
Dual P-Channel 2.5V Specified PowerTrench® MOSFET
-20V, -4.9A, 46mΩ
Features
General Description
„ Max rDS(on) = 46mΩ at VGS = -4.5V, ID = -4.9A
These P-Channel 2.5V specified MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench® process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
„ Max rDS(on) = 69mΩ at VGS = -2.5V, ID = -4.0A
„ Low gate charge (11nC typical).
„ High performance trench technology for extremely low rDS(on).
These devices are well suited for portable electronics
applications: load switching and power management, battery
charging and protection circuits.
„ HBM ESD protection level >3kV (Note 3).
„ RoHS Compliant
Applications
„ Battery Charging
„ Load Switching
D2
D2
D1
D1
G2
D2
5
D2
6
D1
7
D1
8
Q1
Q2
S2
G1
Q2
Q1
4
G2
3
S2
2
G1
1
S1
S1
Pin 1
SO-8
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current
ID
-Continuous
TA = 25°C
(Note 1a)
-Pulsed
PD
TJ, TSTG
Ratings
-20
Units
V
±12
V
-4.9
-30
Power Dissipation
(Note 1a)
1.6
Power Dissipation
(Note 1b)
0.9
Operating and Storage Junction Temperature Range
-55 to +150
A
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
40
(Note 1a)
78
°C/W
Package Marking and Ordering Information
Device Marking
FDS9933BZ
Device
FDS9933BZ
©2008 Fairchild Semiconductor Corporation
FDS9933BZ Rev.C
Package
SO-8
1
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
www.fairchildsemi.com
FDS9933BZ Dual P-Channel 2.5V Specified PowerTrench® MOSFET
March 2008
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250µA, VGS = 0V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
-20
V
ID = -250µA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = -16V, VGS = 0V
1
µA
IGSS
Gate to Source Leakage Current
VGS = ±12V, VDS = 0V
±10
µA
-9
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250µA, referenced to 25°C
3
VGS = -4.5V, ID = -4.9A
38
46
rDS(on)
Static Drain to Source On Resistance
VGS = -2.5V, ID = -4.0A
54
69
VGS = -4.5V, ID = -4.9A, TJ = 125°C
52
67
VDD = -10V, ID = -4.9A
17
gFS
Forward Transconductance
-0.4
-0.9
-1.5
V
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -10V, VGS = 0V,
f = 1MHz
740
985
pF
160
215
pF
145
220
pF
6.7
14
ns
9.3
19
ns
59
95
ns
47
76
ns
11
15
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD = -10V, ID = -4.9A,
VGS = -4.5V, RGEN = 6Ω
VDD = -10V, ID = -4.9A
VGS = -4.5V
1.4
nC
3.7
nC
Drain-Source Diode Characteristics
IS
Maximum continuous Drain-Sourse Diode Forward Current
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = -1.3A
-1.3
(Note 2)
IF = -4.9A, di/dt = 100A/µs
A
-0.8
-1.2
V
46
74
ns
23
37
nC
NOTES:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a) 78°C/W when mounted on a 1 in2
pad of 2 oz copper
b) 135°C/W when mounted on a
minimun pad
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
©2008 Fairchild Semiconductor Corporation
FDS9933BZ Rev.C
2
www.fairchildsemi.com
FDS9933BZ Dual P-Channel 2.5V Specified PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
30
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
3.0
VGS = -4.5V
-ID, DRAIN CURRENT (A)
25
VGS = -3V
VGS = -3.5V
20
VGS = -2.5V
15
10
5
VGS = -2V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
0
0
1
2
3
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
2.5
VGS = -2V
VGS = -3V
1.5
1.0
4
0
5
10
15
20
25
30
-ID, DRAIN CURRENT(A)
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
250
ID = -4.9A
VGS = -4.5V
rDS(on), DRAIN TO
1.4
1.2
1.0
0.8
0.6
-75
-50
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = -4.5V
VGS = -3.5V
0.5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
200
ID = -4.9A
150
100
TJ = 125oC
50
TJ = 25oC
0
1.5
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
2.0
2.5
3.0
3.5
4.0
4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
30
100
-IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
25
-ID, DRAIN CURRENT (A)
VGS = -2.5V
2.0
VDS = -5.0V
20
15
10
TJ = 150oC
TJ = 25oC
5
0
0.5
TJ = -55oC
1.0
1.5
2.0
2.5
3.0
VGS = 0V
10
1
TJ = 150oC
TJ = 25oC
0.1
TJ = -55oC
0.01
1E-3
0.0
3.5
0.2
0.4
0.6
0.8
1.0
1.2
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2008 Fairchild Semiconductor Corporation
FDS9933BZ Rev.C
3
1.4
www.fairchildsemi.com
FDS9933BZ Dual P-Channel 2.5V Specified PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
3000
ID = -4.9A
4.0
3.5
3.0
Ciss
1000
VDD = -5V
CAPACITANCE (pF)
-VGS, GATE TO SOURCE VOLTAGE(V)
4.5
VDD = -10V
2.5
2.0
VDD = -15V
1.5
1.0
Coss
100
Crss
0.5
f = 1MHz
VGS = 0V
0.0
0
2
4
6
8
10
12
10
0.1
Qg, GATE CHARGE(nC)
1
10
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
5
10
10
-Ig, GATE LEAKAGE CURRENT(A)
-IAS, AVALANCHE CURRENT(A)
8
6
4
TJ = 25oC
TJ = 125oC
2
1
0.01
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
4
10
3
10
VGS = 0V
2
10
1
10
TJ = 125oC
0
10
-1
10
-2
10
TJ = 25oC
-3
10
-4
0.1
1
10
10
30
0
4
tAV, TIME IN AVALANCHE(ms)
Figure 9. Unclamped Inductive
Switching Capability
P(PK), PEAK TRANSIENT POWER (W)
-ID, DRAIN CURRENT (A)
16
100
10
100µs
1ms
1
10ms
THIS AREA IS
LIMITED BY rDS(on)
100ms
SINGLE PULSE
TJ = MAX RATED
1s
RθJA = 135oC/W
DC
10s
TA = 25oC
0.01
0.1
12
Figure 10. Gate Leakage Current
vs Gate to Sourse Voltage
50
0.1
8
-VGS, GATE TO SOURCE VOLTAGE (V)
1
10
50
-VDS, DRAIN to SOURCE VOLTAGE (V)
10
SINGLE PULSE
RθJA = 135oC/W
1
TA = 25oC
0.5
-3
10
-2
10
-1
10
0
10
1
10
100
1000
t, PULSE WIDTH (s)
Figure 11. Forward Bias Safe
Operating Area
©2008 Fairchild Semiconductor Corporation
FDS9933BZ Rev.C
VGS = -10V
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDS9933BZ Dual P-Channel 2.5V Specified PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA+ TA
SINGLE PULSE
o
RθJA = 135 C/W
0.01
-3
10
-2
10
-1
10
0
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
©2008 Fairchild Semiconductor Corporation
FDS9933BZ Rev.C
5
www.fairchildsemi.com
FDS9933BZ Dual P-Channel 2.5V Specified PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
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1.
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properly used in accordance with instructions for use provided
in the labeling, can be reasonably expected to result in a
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2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
Obsolete
Not In Production
This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34
©2008 Fairchild Semiconductor Corporation
FDS9933BZ Rev.C
www.fairchildsemi.com
FDS9933BZ Dual P-Channel 2.5V Specified PowerTrench® MOSFET
TRADEMARKS