NTL4502N Quad Power MOSFET 24 V, 15 A, N−Channel, PInPAK Package Features • Four N−Channel MOSFETs in a Single Package • High Drain Current (Up to 80A per Device, Single Pulse tp < 10 µs, • • • • • • • • RJC = 1.5 °C/W) High Input Impedance for Ease of Drive Ultra Low On−resistance (RDS(on)) Provides Low Conduction Losses Very Fast Switching Times Provides Low Switching Losses Low Parasitic Inductance Low Stored Charge for Efficient Switching Very Low VSD Ideal for Synchronous Rectification 200% Footprint Reduction Compared to Similar DPAK Solution for the Same Power Advanced Leadless Power Integrated Package (PInPAK) Applications • • • • • http://onsemi.com V(BR)DSS ID MAX (Note 1) 8.0 mΩ @ 4.5 V 24 V 15 A 11.2 mΩ @ 10 V ÇÇ Ç ÇÇ ÇÇ Ç ÇÇ ÇÇ Ç MARKING DIAGRAM 16 1 16 1 DC−DC Converters Motherboard/Server Voltage Regulator Telecomm/Industrial Power Supply H−Bridge Circuits Low Voltage Motor Control RDS(ON) TYP NTL4502N AYWW CASE 495 PInPAK STYLE 1 xx A Y WW = Specific Device Code = Assembly Location = Year = Work Week MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State TA=25°C t≤10 s TA=25°C Power Dissipation (Note 1) Steady State TA=25°C Symbol Value Units VDSS 24 V VGS ±20 V ID 15 A TA=85°C 10.9 18.8 PD t≤10 s Continuous Drain Current (Note 2) Steady State Power Dissipation (Note 2) W 2.9 4.5 TA=25°C ID TA=85°C W IDM 32 A TJ, TSTG −55 to 150 °C IS 15 A Single Pulse Drain−to−Source Avalanche Energy – (VDD= 25 V, VG=10 V, IPK=60 A, L=0.1 mH, RG= 1.0 k) EAS 80 mJ Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Operating Junction and Storage Temperature Source Current (Body Diode) Semiconductor Components Industries, LLC, 2003 August, 2003 − Rev. 2 D1 16 7 D2 D4 15 8 D3 14 13 12 11 10 9 S4 D4 G4 S3 D3 G3 (Bottom View) 1.7 tp=10 µs S1 D1 G1 S2 D2 G2 1 2 3 4 5 6 8.2 PD Pulsed Drain Current TA=25°C A 11.4 ÇÇ ÇÇ Ç ÇÇ ÇÇ Ç ÇÇÇÇ ÇÇÇÇ ÇÇ ÇÇ Ç ÇÇ ÇÇ Ç ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇ ÇÇ Ç ÇÇ ÇÇ Ç ÇÇÇÇ ÇÇÇÇ ÇÇÇ ÇÇ ÇÇ ÇÇ Ç Pinout Diagram ORDERING INFORMATION Device 1 NTL4502NT1 Package Shipping PInPAK 1500 / Reel Publication Order Number: NTL4502N/D NTL4502N THERMAL RESISTANCE RATINGS Parameter Symbol Max Units Junction−to−Case (Drain) RJC 1.5 °C/W Junction−to−Ambient – Steady State (Note 1) RJA 43 Junction−to−Ambient – t≤10 s (Note 1) RJA 27.5 Junction−to−Ambient – Steady State (Note 2) RJA 75 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface−mounted on FR4 board using minimum recommended pad size (Cu area = 0.440 in sq). 1 (S1) 2 (D1) 3 (G1) 4 (S2) 5 (D2) 6 (G2) (D1) 16 7 (D2) (D4) 15 8 (D3) 14 (S4) 13 (D4) 12 (G4) 11 (S3) SCHEMATIC (TOP VIEW) http://onsemi.com 2 10 (D3) 9 (G3) NTL4502N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Condition Min Typ Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 A 24 27.5 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ 25.5 mV/°C Characteristic Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V Gate−to−Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V VGS(th) VDS = VGS, ID = 250 A TJ=25°C 1.5 TJ=125°C A 10 ±100 nA 2.0 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Drain−to−Source On−Resistance Forward Transconductance VGS(th)/TJ RDS(on) ( ) gFS 1.0 1.5 −4.1 mV/°C VGS = 4.5 V, ID = 15 A 11.2 13 VGS = 10 V, ID = 15 A 8.0 11 VDS = 10 V, ID = 15 A 27 m S CHARGES AND CAPACITANCES Input Capacitance Ciss VDS = 20 V, VGS = 0 V, f = 1.0 MHz 1070 1605 Output Capacitance Coss 408 612 Reverse Transfer Capacitance Crss 142 213 Total Gate Charge QG(TOT) 13 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD VGS = 4.5 V, ID = 15 A, VDS = 24 V pF nC 1.6 3.3 7.0 SWITCHING CHARACTERISTICS, VGS = 10 V (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) VGS = 10 V, VDD = 12 V, ID = 15 A, RG = 3.0 tf 5.0 8.5 28 47 22 37 6.0 10 9.5 16 ns SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 33 55 14 23.5 7.5 12.5 TJ=25°C 0.8 1.2 TJ=125°C 0.7 VGS = 4.5 V, VDD = 12 V, ID = 15 A, RG = 3.0 tf ns DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD VGS = 0 V, IS = 15 A tRR 31 Charge Time ta 17 Discharge Time tb Reverse Recovery Charge VGS = 0 V, dIS/dt = 100 A/s, IS = 15 A QRR http://onsemi.com 3 ns 14 20 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. V nC NTL4502N 60 VGS = 10 V VGS = 4.0 V VGS = 5.5 V VGS = 5.0 V 60 VGS = 3.5 V 40 VGS = 3.0 V 20 0 2 4 6 8 TJ = 25°C 20 TJ = 125°C 0 0 10 1 4 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 2. Transfer Characteristics 0.024 0.02 0.016 TJ = 150°C 0.012 TJ = 125°C 0.008 TJ = 25°C TJ = −55°C 20 30 40 50 60 70 80 90 100 110 120 0.028 VGS = 4.5 V 0.024 0.02 TJ = 150°C TJ = 125°C 0.016 TJ = 25°C 0.012 TJ = −55°C 0.008 0.004 10 20 30 ID, DRAIN CURRENT (A) 40 50 60 70 80 90 100 110 120 ID, DRAIN CURRENT (A) Figure 3. On−Resistance versus Drain Current and Temperature Figure 4. On−Resistance versus Drain Current and Temperature 10000 1.8 ID = 30 A VGS = 4.5 V and 10 V TJ = 150°C IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 3 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS = 10 V 1.6 2 Figure 1. On−Region Characteristics 0.028 0.004 10 40 TJ = −55°C VGS = 2.5 V 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE () ID, DRAIN CURRENT (A) 80 VDS 10 V VGS = 4.5 V VGS = 8.0 V VGS = 6.0 V 100 RDS(on), DRAIN−TO−SOURCE RESISTANCE () ID, DRAIN CURRENT (A) 120 1000 1.4 1.2 1.0 TJ = 125°C 100 TJ = 100°C 0.8 0.6 −50 10 −25 0 25 50 75 100 125 150 0 TJ, JUNCTION TEMPERATURE (°C) 5 10 15 20 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current versus Voltage http://onsemi.com 4 25 NTL4502N VDS = 0 V VGS = 0 V VGS, GATE−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) Ciss TJ = 25°C 1600 Ciss 1200 Crss 800 Coss 400 Crss 0 −10 −5 VGS 0 VDS 5 10 15 20 6 32 QG(TOT) 5 24 VDS 4 VGS 3 QGS QGD 16 2 ID = 15 A TJ = 25°C 1 0 0 4 8 12 8 0 Qg, TOTAL GATE CHARGE (nC) GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge Figure 7. Capacitance Variation 1000 60 IS, SOURCE CURRENT (A) 100 tr td(off) td(on) tf 10 50 40 30 20 TJ = 150°C 10 TJ = 25°C 0 1 1 10 100 0 RG, GATE RESISTANCE () 100 0.2 0.4 10 s SINGLE PULSE TC = 25°C 100 s 10 1 ms 10 ms RDS(ON) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 0.8 1 Figure 10. Diode Forward Voltage versus Current VGS = 20 V 1 0.6 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation versus Gate Resistance ID, DRAIN CURRENT (A) t, TIME (ns) VDS = 12 V ID = 15 A VGS = 4.5 V dc 1 10 100 Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 2000 NTL4502N PACKAGE DIMENSIONS PInPAK CASE 495−01 ISSUE O 0.08 (0.003) Y −V− ÇÇ Ç Ç ÇÇ Ç Ç ÇÇ Ç Ç ÇÇ ÇÇ A −Y− −W− B 0.20 (0.008) Y E/2 E N N M 0.08 (0.003) Y J 4 PL R 0.38 (0.015) 6 PL EXPOSED DIE ATTACH PAD T 4 PL R 4 PL 0.10 (0.004) M 0.05 (0.002) M ÇÇ ÇÇ ÇÇ Ç ÇÇ Ç ÇÇ ÇÇ ÇÇ Ç ÇÇ ÇÇ ÇÇ ÇÇ ÇÇ Ç ÇÇ ÇÇ ÇÇÇ Y V W C 8 PL Y L 12 PL F 3 PL H 6 PL K 8 PL D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. COPLANARITY APPLIES TO LEAD. DIE ATTACHED PAD. 4. OPTIONAL FEATURES ARE FOR REFERENCE ONLY. DIM A B C D E F G H J K L M P R S T MILLIMETERS MIN MAX 10.40 10.60 10.40 10.60 0.40 0.50 1.27 BSC 0.50 0.52 1.70 1.90 2.45 2.55 0.80 1.00 2.90 3.10 4.75 4.95 1.10 1.30 2.00 2.20 0.30 0.50 0.70 0.90 0.58 0.78 1.68 1.78 INCHES MIN MAX 0.409 0.417 0.409 0.417 0.016 0.020 0.050 BSC 0.020 0.020 0.067 0.075 0.096 0.100 0.031 0.039 0.114 0.122 0.187 0.195 0.043 0.051 0.079 0.087 0.012 0.020 0.028 0.035 0.023 0.031 0.066 0.070 D/2 4 PL P G S VIEW N−N PInPAK is a registered trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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