NTF3055-160 Preferred Device Power MOSFET 2.0 Amps, 60 Volts N–Channel SOT–223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 2.0 AMPERES 60 VOLTS RDS(on) = 160 m Applications • • • • Power Supplies Converters Power Motor Controls Bridge Circuits N–Channel D MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Value Unit Drain–to–Source Voltage VDSS 60 Vdc Drain–to–Gate Voltage (RGS = 1.0 MΩ) VDGR 60 Vdc ± 20 ± 30 Vdc Vpk ID ID IDM 2.0 1.2 6.0 Adc PD 2.1 1.3 0.014 W W W/°C TJ, Tstg –55 to 175 °C EAS 65 mJ Rating Gate–to–Source Voltage – Continuous – Non–repetitive (tp ≤ 10 ms) Drain Current – Continuous @ TA = 25°C – Continuous @ TA = 100°C – Single Pulse (tp ≤ 10 µs) Total Power Dissipation @ TA = 25°C (Note 1.) Total Power Dissipation @ TA = 25°C (Note 2.) Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL(pk) = 6.0 Apk, L = 10 mH, VDS = 60 Vdc) Thermal Resistance – Junction to Ambient (Note 1.) – Junction to Ambient (Note 2.) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds VGS G S MARKING DIAGRAM Apk 4 1 SOT–223 CASE 318E STYLE 3 2 5160 LWW 3 5160 L WW = Device Code = Location Code = Work Week PIN ASSIGNMENT 4 Drain °C/W RθJA RθJA 72.3 114 TL 260 °C 1. When surface mounted to an FR4 board using 1″ pad size, (Cu. Area 1.127 in2). 2. When surface mounted to an FR4 board using minimum recommended pad size, 2–2.4 oz. (Cu. Area 0.272 in2). 1 Gate 2 Drain 3 Source ORDERING INFORMATION Device Semiconductor Components Industries, LLC, 2001 July, 2001 – Rev. 0 1 Package Shipping NTF3055–160T1 SOT–223 1000 Tape & Reel NTF3055–160T3 SOT–223 4000 Tape & Reel NTF3055–160T3LF SOT–223 4000 Tape & Reel Publication Order Number: NTF3055–160/D NTF3055–160 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit 60 – 72 72 – – – – – – 1.0 10 – – ± 100 2.0 – 3.1 6.6 4.0 – – 142 160 – 0.142 0.270 0.384 – gfs – 1.8 – Mhos Ciss – 200 280 pF Coss – 68 100 Crss – 26 40 td(on) – 9.2 20 tr – 9.2 20 td(off) – 16 40 tf – 9.2 20 QT – 6.9 14 Q1 – 1.4 – Q2 – 3.0 – – – 0.86 0.70 1.0 – trr – 28.9 – ta – 19.1 – tb – 9.8 – QRR – 0.030 – OFF CHARACTERISTICS V(BR)DSS Drain–to–Source Breakdown Voltage (Note 3.) (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C) Gate–Body Leakage Current Vdc µAdc IDSS (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS mV/°C nAdc ON CHARACTERISTICS (Note 3.) Gate Threshold Voltage (Note 3.) (VDS = VGS, ID = 250 µAdc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain–to–Source On–Resistance (Note 3.) (VGS = 10 Vdc, ID = 1.0 Adc) RDS(on) Static Drain–to–Source On–Resistance (Note 3.) (VGS = 10 Vdc, ID = 2.0 Adc) (VGS = 10 Vdc, ID = 1.0 Adc, TJ = 150°C) VDS(on) Forward Transconductance (Note 3.) (VDS = 8.0 Vdc, ID = 1.5 Adc) Vdc mV/°C mΩ Vdc DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = 25 Vdc, Vd VGS = 0 V, V f = 1.0 MHz) Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4.) Turn–On Delay Time Rise Time Turn–Off Delay Time (VDD = 30 Vdc, ID = 2.0 Adc, VGS = 10 Vdc, Vdc RG = 9.1 Ω) (Note 3.) Fall Time Gate Charge (VDS = 48 Vdc, Vd ID = 2.0 2 0 Adc, Ad VGS = 10 Vdc) (Note 3.) ns nC SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage (IS = 2.0 Adc, VGS = 0 Vdc) (IS = 2.0 Adc, VGS = 0 Vdc, TJ = 150°C) (Note 3.) Reverse Recovery Time (IS = 2.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) (Note 3.) Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 VSD Vdc ns µC NTF3055–160 VGS = 6 V 3.2 2.8 2.4 VGS = 7 V 2 VGS = 8 V 1.6 VGS = 5 V 1.2 0.8 VGS = 10 V VGS = 4.5 V 0.4 0.8 0.4 1.6 1.2 2 2.4 1.6 1.2 TJ = 25°C 0.8 TJ = 100°C 0.4 2.8 3 3.8 4.2 4.6 5 5.4 5.8 Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics RDS(on), DRAIN–TO–SOURCE RESISTANCE (Ω) VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) 0.28 VGS = 10 V 0.24 TJ = 100°C 0.2 TJ = 25°C 0.16 0.12 TJ = –55°C 0.08 0.04 0 3.4 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) 0.5 1 1.5 2.5 2 3 3.5 4 ID, DRAIN CURRENT (AMPS) 6.2 0.28 VGS = 15 V 0.24 0.2 0.16 TJ = 25°C 0.12 0.08 0.04 0 0 0.5 1 1.5 2 2.5 3 3.5 4 ID, DRAIN CURRENT (AMPS) Figure 3. On–Resistance versus Gate–to–Source Voltage Figure 4. On–Resistance versus Drain Current and Gate Voltage VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) 1000 2 1.8 VGS = 0 V ID = 1 A VGS = 10 V TJ = 150°C IDSS, LEAKAGE (nA) RDS(on), DRAIN–TO–SOURCE RESISTANCE (Ω) 2 TJ = –55°C 0 RDS(on), DRAIN–TO–SOURCE RESISTANCE (NORMALIZED) 2.4 0 0 0 VDS ≥ 10 V 2.8 VGS = 5.5 V ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 3.6 1.6 1.4 1.2 1 100 TJ = 125°C 10 TJ = 100°C 0.8 0.6 –50 1 –25 0 25 50 75 100 125 150 175 0 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 5. On–Resistance Variation with Temperature Figure 6. Drain–to–Source Leakage Current versus Voltage http://onsemi.com 3 60 VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) NTF3055–160 560 12 VGS = 0 V VDS = 0 V TJ = 25°C C, CAPACITANCE (pF) 480 Ciss 400 320 Crss 240 Ciss 160 Coss 80 Crss 0 10 5 VGS 0 VDS 5 10 15 20 25 4 2 ID = 2 A TJ = 25°C 0 0 1 2 3 4 5 7 6 8 Figure 8. Gate–to–Source and Drain–to–Source Voltage versus Total Charge 2 IS, SOURCE CURRENT (AMPS) td(off) td(on) tr 10 tf 1 10 100 0.8 0.4 0 0.6 0.64 0.68 0.72 0.76 0.8 0.84 0.88 Figure 10. Diode Forward Voltage versus Current dc 10 ms 1 ms 0.001 0.1 1.2 Figure 9. Resistive Switching Time Variation versus Gate Resistance 1 0.01 1.6 VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS) VGS = 20 V SINGLE PULSE TC = 25°C 0.1 VGS = 0 V TJ = 25°C RG, GATE RESISTANCE (Ω) RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 100 µs 10 µs 10 100 EAS, SINGLE PULSE DRAIN–TO–SOURCE AVALANCHE ENERGY (mJ) t, TIME (ns) Q2 Figure 7. Capacitance Variation 100 ID, DRAIN CURRENT (AMPS) Q1 6 Qg, TOTAL GATE CHARGE (nC) VDS = 30 V ID = 2 A VGS = 10 V 10 VGS 8 GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS) 100 1 QT 10 70 ID = 6 A 60 50 40 30 20 10 0 25 50 75 100 125 150 175 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature http://onsemi.com 4 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) NTF3055–160 100 D = 0.5 10 0.2 0.1 0.05 1 P(pk) MIN PAD 1 OZ (Cu Area = 0.272 sq in) 0.01 t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.1 0.00001 0.0001 0.001 0.1 0.01 t, TIME (s) Figure 13. Thermal Response http://onsemi.com 5 1 10 100 1000 NTF3055–160 PACKAGE DIMENSIONS SOT–223 (TO–261) CASE 318E–04 ISSUE K A F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 S 1 2 3 B D L G J C 0.08 (0003) H M K http://onsemi.com 6 INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0 10 S 0.264 0.287 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0 10 6.70 7.30 NTF3055–160 Notes http://onsemi.com 7 NTF3055–160 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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