SUNTAC STC2222A

STC2222A
NPN Silicon Transistor
General Purpose Transistor
• Collector-Emitter Voltage: VCEO= 40V
• Collector Power Dissipation: PC (max)=625mW
• Refer STC2222 for graphs
TO-92
1
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Value
75
Units
V
VCEO
VEBO
Collector-Emitter Voltage
40
V
Emitter-Base Voltage
6
IC
V
Collector Current
600
mA
PC
Collector Power Dissipation
625
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC=10µA, IE=0
Min.
75
BVCEO
Collector Emitter Breakdown Voltage
IC=10mA, IB=0
40
BVEBO
Emitter-Base Breakdown Voltage
IE=10µA, IC=0
6
ICBO
Collector Cut-off Current
VCB=60V, IE=0
IEBO
Emitter Cut-off Current
VEB=3V, IC=0
hFE
DC Current Gain
IC=0.1mA, VCE=10V
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, *IC=150mA
VCE=10V, *IC=500mA
VCE (sat)
* Collector-Emitter Saturation Voltage
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VBE (sat)
* Base-Emitter Saturation Voltage
IC=150mA, IB=15mA
IC=500mA, IB=50mA
fT
Current Gain Bandwidth Product
VCE=20V, IC=20mA
f=100MHz
Typ.
Max.
Units
V
V
V
35
50
75
100
40
0.01
µA
10
nA
300
0.6
0.3
1
V
V
1.2
2
V
V
300
MHz
Cob
Output Capacitance
VCB=10V, IE=0, f=1MHz
8
pF
tON
Turn On Time
VCC=30V, IC=150mA
IB1=15mA, VBE(off)=0.5V
35
ns
tOFF
Turn Off Time
VCC=30V, IC=150mA
IB1=IB2=15mA
285
ns
NF
Noise Figure
IC=100µA, VCE=10V
RS=IKΩ, f=1KHz
4
dB
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
*
STC2222A
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Typical Characteristics
1000
hFE, DC CURRENT GAIN
VCE = 10V
100
10
1
10
100
10
IC = 10 IB
VBE(sat)
1
0.1
VCE(sat)
0.01
1K
1
10
IC[A], COLLECTOR CURRENT
1K
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
100
10
1
fT[MHz],
CURRENT GAIN BANDWIDTH PRODUCT
1000
IE = 0
f = 1MHz
Cob [pF], CAPACITANCE
100
VCE = 20V
100
10
0.1
1
10
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 3. Output Capacitance
100
1
10
100
IC[mA], COLLECTOR CURRENT
Figure 4. Current Gain Bandwidth Product
1K