TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Compact TO−220 AB package. http://onsemi.com Features 1 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40, 60, 80, 100 VOLTS, 80 WATTS • Pb−Free Packages are Available* MAXIMUM RATINGS Symbol 29 30 29A 30A 29B 30B 29C 30C Unit VCEO 40 60 80 100 Vdc Collector − Base Voltage VCB 40 60 80 100 Vdc Emitter − Base Voltage VEB Rating Collector − Emitter Voltage Collector Current − Continuous − Peak IC Base Current IB Total Power Dissipation @ TC = 25°C Derate above 25°C PD Total Power Dissipation @ TA = 25°C Derate above 25°C PD Unclamped Inductive Load Energy (Note 1) Operating and Storage Junction Temperature Range 5.0 Vdc Adc 4 1.0 3.0 0.4 Adc 30 0.24 W W/°C 2.0 0.016 W W/°C E 32 mJ TJ, Tstg – 65 to + 150 °C THERMAL CHARACTERISTICS Characteristic MARKING DIAGRAM TO−220AB CASE 221A STYLE 1 1 2 STYLE 1: PIN 1. 2. 3. 4. 3 TIPxxx A Y WW G TIPxxxG AYWW BASE COLLECTOR EMITTER COLLECTOR = Device Code: 29, 29A, 29B, 29C 30, 30A, 30B, 30C = Assembly Location = Year = Work Week = Pb−Free Package Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 62.5 °C/W ORDERING INFORMATION Thermal Resistance, Junction−to−Case RqJC 4.167 °C/W See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. This rating based on testing with LC = 20 mH, RBE = 100 W, VCC = 10 V, IC = 1.8 A, P.R.F = 10 Hz *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2011 October, 2011 − Rev. 11 1 Publication Order Number: TIP29B/D TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) COLLECTOR COLLECTOR BASE BASE ≈ 8.0 k ≈ 120 ≈ 8.0 k ≈ 120 EMITTER EMITTER Figure 1. Darlington Circuit Schematic ORDERING INFORMATION Device TIP29 Package Shipping TO−220 50 Units / Rail TIP29G TO−220 (Pb−Free) 50 Units / Rail TIP29A TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail TO−220 50 Units / Rail TIP30G TO−220 (Pb−Free) 50 Units / Rail TIP30A TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail TIP29AG TIP29B TIP29BG TIP29C TIP29CG TIP30 TIP30AG TIP30B TIP30BG TIP30C TIP30CG http://onsemi.com 2 TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit 40 60 80 100 − − − − − − 0.3 0.3 − − − − 200 200 200 200 IEBO − 1.0 mAdc hFE 40 15 − 75 − Collector−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 125 mAdc) VCE(sat) − 0.7 Vdc Base−Emitter On Voltage (IC = 1.0 Adc, VCE = 4.0 Vdc) VBE(on) − 1.3 Vdc Current−Gain − Bandwidth Product (Note 3) (IC = 200 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT 3.0 − MHz Small−Signal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 20 − − OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 30 mAdc, IB = 0) (Note 2) TIP29, TIP30 TIP29A, TIP30A TIP29B, TIP30B TIP29C, TIP30C Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) TIP29, TIP29A, TIP30, TIP30A TIP29B, TIP29C, TIP30B, TIP30C Collector Cutoff Current (VCE = 40 Vdc, VEB = 0) (VCE = 60 Vdc, VEB = 0) (VCE = 80 Vdc, VEB = 0) (VCE = 100 Vdc, VEB = 0) TIP29, TIP30 TIP29A, TIP30A TIP29B, TIP30B TIP29C, TIP30C Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) VCEO(sus) ICEO ICES Vdc mAdc mAdc ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 0.2 Adc, VCE = 4.0 Vdc) DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) DYNAMIC CHARACTERISTICS 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0% 3. fT = ⎪hfe⎪• ftest http://onsemi.com 3 TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) 3.0 2.0 500 TJ = 150°C VCE = 2.0 V 25°C 100 70 50 -55°C 30 10 7.0 5.0 0.03 IB1 = IB2 IC/IB = 10 ts′ = ts - 1/8 tf TJ = 25°C ts′ t, TIME (s) μ hFE, DC CURRENT GAIN 300 1.0 0.7 0.5 0.3 0.2 tf @ VCC = 30 V tf @ VCC = 10 V 0.1 0.07 0.05 0.5 0.7 1.0 0.05 0.07 0.1 0.3 IC, COLLECTOR CURRENT (AMP) 0.03 0.03 3.0 0.2 0.3 0.5 0.7 1.0 VEB(off) VCC 2.0 RC SCOPE Vin 0.7 0.5 RB APPROX +11 V Cjd << Ceb t1 ≤ 7.0 ns 100 < t2 < 500 ms t3 < 15 ns Vin t2 TURN-OFF PULSE t, TIME (s) μ t1 t3 -4.0 V 0.3 0.1 0.07 0.05 DUTY CYCLE ≈ 2.0% APPROX -9.0 V 0.03 0.02 0.03 RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. IC/IB = 10 TJ = 25°C TJ = 150°C 1 ms dc 0.1 SECOND BREAKDOWN LIMITED THERMALLY LIMITED @ TC = 25°C BONDING WIRE LIMITED TIP29, 30 CURVES APPLY BELOW TIP29A, 30A RATED VCEO TIP29B, 30B TIP29C, 30C 0.1 1.0 4.0 20 40 10 VCE, COLLECTOR-EMITTER VOLTAGE, (VOLTS) tr @ VCC = 10 V td @ VEB(off) = 2.0 V 0.05 0.07 0.1 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) 3.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on TJ(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150°C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 10 3.0 tr @ VCC = 30 V Figure 5. Turn−On Time Figure 4. Switching Time Equivalent Circuit IC, COLLECTOR CURRENT (AMPS) 3.0 Figure 3. Turn−Off Time 1.0 Vin 0 2.0 IC, COLLECTOR CURRENT (AMP) Figure 2. DC Current Gain TURN-ON PULSE APPROX +11 V 0.05 0.07 0.1 5 ms 100 Figure 6. Active Region Safe Operating Area http://onsemi.com 4 TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AG −T− B F T SEATING PLANE C S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.036 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.91 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. 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American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative TIP29B/D