SKM 200GB176D... .& / % Absolute Maximum Ratings Symbol Conditions IGBT 0 .& / # 0 2&) / 2')) .!) $ 3) / 23) $ 6)) $ 8 .) 2) < .& / .2) $ 3) / 2>) $ 6)) $ 0 2&) / 22)) $ .& / .2) $ 3) / 2>) $ 6)) $ 22)) $ &)) $ 0 ( >) ,,, ? 2&) / (>),,,?2.& / >))) #45."# 7 Trench IGBT Modules 2.)) 9 7 : .) 9 0 2.& / ; 2')) Inverse Diode #= 0 2&) / #=45 #=45."#= SKM 200GB176D #=5 2) 9 , SKM 200GAL176D Freewheeling Diode Features ! " # Typical Applications $ % &'& ( '&) $ * +" ,- #= 0 2&) / #=45 #=45."#= #=5 2) 9 , 0 2&) / Module #+45- $ 2 , .& / % Characteristics Symbol Conditions IGBT 7+- 7 # ! $ # 7 ) ) + 7 2& 0 .& / max. Units &. &3 !> )2 )6 $ 2 2. )@ 22 0 .&/ !' 36 A 0 2.&/ 2) 2. A . . >& 0 2.&/, .> .@ 2 5B 22 > ) && = = ) >> = C7 7 (3,,,?2& 2.)) 47 0 .& / > .& D 6!) >& @6 '!) 2>) E &3 E %+ %+ 47 & A 47 & A 4+0(- 1 typ. 0 2.& / # 2&) $ 7 2& 0 .&/, .& 7 ) min. 0 .& / GB Units .& / #45 SEMITRANS® 3 Values #7F 2.)) # 2&)$ 0 2.& / 7 8 2& ) 2. GHI GAL 06-10-2009 NOS © by SEMIKRON SKM 200GB176D... Characteristics Symbol Conditions Inverse Diode = #= 2&) $9 7 ) =) = ® SEMITRANS 3 Trench IGBT Modules #445 C #= 2&) $ %H% 6')) $H< 7 (2& 9 2.)) 4+0(-J %% min. typ. max. Units 0 .& /, 2' 2@ 0 2.& /, 2' 2@ 0 .& / 22 26 0 2.& / )@ 22 0 .& / > > A 0 2.& / &6 &6 A 0 2.& / 2@& &. $ < 62 E ) .& GHI FWD SKM 200GB176D SKM 200GAL176D = #= 2&) $9 7 ) =) = Features ! " # #445 C #= 2&) $ %H% 6')) $H< 7 (2& 9 2.)) 4+0(-=J %% 2' 2@ 0 2.& /, 2' 2@ 0 .& / 22 26 0 2.& / )@ 22 0 .& / > > 0 2.& / &6 &6 0 2.& / 2@& &. $ < 62 E ) .& GHI Module K 4L?L 2& , ( Typical Applications $ % &'& ( 4+(- % 5 M 5! 5 5! '&) $ * +" ,- 0 .& /, .) .& / ) 6& A 2.& / )& A ) )63 GHI 6 & N .& & N 6.& This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. GB 2 GAL 06-10-2009 NOS © by SEMIKRON SKM 200GB176D... SEMITRANS® 3 Zth Symbol Zth(j-c)l Conditions Values Units 4 4 4 4 2 . 6 > 2 . 6 3) 6) 3. 23 ) )'&6 ) )2 ) )))3 MHI MHI MHI MHI > ) )))6 4 4 4 4 2 . 6 > 2 . 6 2!) !' .) 6 ) )63. ) ))@ ) )))@ MHI MHI MHI MHI > ) ))& Zth(j-c)D Trench IGBT Modules SKM 200GB176D SKM 200GAL176D Features ! " # Typical Applications $ % &'& ( '&) $ * +" ,- GB 3 GAL 06-10-2009 NOS © by SEMIKRON SKM 200GB176D... Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 06-10-2009 NOS © by SEMIKRON SKM 200GB176D... Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance Fig. 10 Typ. CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode reverse recovery charge 5 06-10-2009 NOS © by SEMIKRON SKM 200GB176D... UL Recognized File no. E 63 532 J &! 7F 6 J &! 7$K J &' 06-10-2009 NOS © by SEMIKRON