SEMIKRON SKM200GB176D

SKM 200GB176D...
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Characteristics
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SEMITRANS® 3
Values
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GHI
GAL
06-10-2009 NOS
© by SEMIKRON
SKM 200GB176D...
Characteristics
Symbol Conditions
Inverse Diode
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SEMITRANS 3
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This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
GAL
06-10-2009 NOS
© by SEMIKRON
SKM 200GB176D...
SEMITRANS® 3
Zth
Symbol
Zth(j-c)l
Conditions
Values
Units
4
4
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4
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Trench IGBT Modules
SKM 200GB176D
SKM 200GAL176D
Features
! " #
Typical Applications
$ % &'& (
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* +" ,-
GB
3
GAL
06-10-2009 NOS
© by SEMIKRON
SKM 200GB176D...
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
06-10-2009 NOS
© by SEMIKRON
SKM 200GB176D...
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 Typ. CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode reverse recovery charge
5
06-10-2009 NOS
© by SEMIKRON
SKM 200GB176D...
UL Recognized
File no. E 63 532
J &!
7F
6
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06-10-2009 NOS
© by SEMIKRON