SKM 200GB128D )- ." ' Absolute Maximum Ratings Symbol Conditions IGBT / 1-* . % / 1-* . %45 1)** 2** & 3* . ))* & 2** & 7 )* 1* ; )- . 1=* & 3* . 12* & 2** & 1??* & -** & ?*>>> B 1-* . ?*>>> B 1)- . ?*** %45 )$% SPT IGBT Module SKM 200GB128D #** 8 6 9 )* 8 : 1)** Units )- . 6 SEMITRANS® 3 Values / 1)- . Inverse Diode %< / 1-* . %<45 %<45 )$ %< %<5 1* 8 > / 1-* . Module %@45A / Features !" # $ % Typical Applications & ' ( ' )*+, &" 1 > )- ." ' Characteristics Symbol Conditions IGBT 6@A 6 " % # & % 6 * " * @A 6 1- typ. max. Units ?"- -"- #"?- / )- . *") *"# & / )- . 1 1"1- / 1)- . *"= 1"*- / )-. # 3 C / 1)-. 3 1* C > 1"= )"2- / 1)-. )"1 )"-- % 1-* &" 6 1- / )-. )-" 6 * min. 1 5, > 12 ) < < ) < 1E** D6 6 3 B)* 46 / )- . )"- F 46 E C 'G' ?3** &G; 46 E C #** % 1-*& / 1)- . 6 71- 1)-* 13 #)* -- H I )* 1- H '@ A '@A 4@/A %6J *"*=- KGL GB 1 11-09-2006 SEN © by SEMIKRON SKM 200GB128D Characteristics Symbol Conditions Inverse Diode < %< 1-* &8 6 * min. / )- . > / 1)- . SEMITRANS® 3 SPT IGBT Module )"- 1"3 > 1") < / )- . # E"3 C / 1)- . 1=* )? & ; 3 H %445 D %< 1-* & 'G' ?3** &G; 6 1- 8 #** 4@/AM '' *")- KGL Module 1>" 4@A ' 5 + 5# 5 5# ) 1"1 SKM 200GB128D Units / )- . 4NBN !" # $ % max. <* I Features typ. )* )- . *"2- C 1)- . *"- C *"*23 KGL 2 - O )"- - O 2)- This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. Typical Applications & ' ( ' )*+, GB 2 11-09-2006 SEN © by SEMIKRON SKM 200GB128D SEMITRANS® 3 Zth Symbol Zth(j-c)l Conditions Values Units 4 4 4 4 1 ) 2 ? 1 ) 2 #)) #"3 1") *"*E?? *"**E3 *"**1# +GL +GL +GL +GL ? *"***) 4 4 4 4 1 ) 2 ? 1 ) 2 1-E1 )1 2 *"*E1# *"**-# *"**?) +GL +GL +GL +GL ? *"***) Zth(j-c)D SPT IGBT Module SKM 200GB128D Features !" # $ % Typical Applications & ' ( ' )*+, GB 3 11-09-2006 SEN © by SEMIKRON SKM 200GB128D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 11-09-2006 SEN © by SEMIKRON SKM 200GB128D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode peak reverse recovery charge 5 11-09-2006 SEN © by SEMIKRON SKM 200GB128D UL Recognized File no. 63 532 M -# 6J 6 M -# 11-09-2006 SEN © by SEMIKRON