SEMIKRON SKM300GAL128D

SKM 300GB128D ...
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Absolute Maximum Ratings
Symbol Conditions
IGBT
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SKM 300GAL128D
Freewheeling Diode
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Typical Applications
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SKM 300GB128D
Features
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Characteristics
Symbol Conditions
IGBT
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SEMITRANS® 3
Values
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JKL
GAL
13-10-2006 RAA
© by SEMIKRON
SKM 300GB128D ...
Characteristics
Symbol Conditions
Inverse Diode
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SEMITRANS® 3
SPT IGBT Module
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Units
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Features
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Typical Applications
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This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
GAL
13-10-2006 RAA
© by SEMIKRON
SKM 300GB128D ...
SEMITRANS® 3
Zth
Symbol
Zth(j-c)l
Conditions
Values
Units
5
5
5
5
1
)
2
7
1
)
2
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2"*"*"*7
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Zth(j-c)D
SPT IGBT Module
SKM 300GB128D
SKM 300GAL128D
Features
!" # $ %
Typical Applications
& ' (
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GB
3
GAL
13-10-2006 RAA
© by SEMIKRON
SKM 300GB128D ...
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
13-10-2006 RAA
© by SEMIKRON
SKM 300GB128D ...
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode peak reverse recovery charge
5
13-10-2006 RAA
© by SEMIKRON
SKM 300GB128D ...
UL Recognized
File no. 63 532
M -#
M-#
6
8I
M-3
13-10-2006 RAA
8&H
© by SEMIKRON