SKM 75GB176D
Absolute Maximum Ratings
Symbol Conditions
IGBT
0 .( /
%
0 2(+ /
%45
.(/" '
2)++
3+
&
3+ /
((
&
2++
&
7 .+
2+
;
.( /
3+
&
3+ /
((
&
2++
&
((+
&
.++
&
*=+ --- > 2(+
/
*=+ --- > 2.(
/
=+++
6
SEMITRANS® 2
Trench IGBT Modules
SKM 75GB176D
2.++ 8 6 9 .+ 8 0 2.( /
: 2)++ Inverse Diode
%<
0 2(+ /
%<45
%<45.$%<
%<5
2+ 8 -
0 2(+ /
Module
%45
0
Features
!" # $ %
Typical Applications
& ' ()( *
)(+ &
,! $ -
Units
.( /
%45.$%
Values
&" 2 -
Characteristics
Symbol Conditions
IGBT
6
6 " % . &
%
6 + " +
6 2( %
(+ &" 6 2( .(" 6 + .(/" '
min.
typ.
max.
Units
(".
("3
#"=
0 .( /
+"2
+"?
&
0 .( /
2
2".
0 2.( /
+"@
2"2
0 .(/
.+
.(
A
0 2.(/
?2
?#
A
0 .(/-
.
."=(
0 2.(/-
."=(
."@
2 5B
="?
+"23
<
<
+"2(
<
=2+
C6
6 *3--->2(
46
0 .( /
@"(
D
46
#". A
'E' 2#3+ &E;
46 #". A
'E' ?.+ &E;
.2+
?+
.(
(@+
2?(
F
23
F
'
' 40*
%6G
2.++
% (+&
0 2.( /
6 72(
+"?3
HEI
GB
1
06-10-2009 NOS
© by SEMIKRON
SKM 75GB176D
Characteristics
Symbol Conditions
Inverse Diode
< %<
(+ &8 6 + <+
<
®
SEMITRANS 2
Trench IGBT Modules
%445
C
%< (+ &
'E' 2?.+ &E;
6 *2( 8 2.++ 40*J
''
min.
typ.
max.
Units
0 .( /-
2")
2"@
0 2.( /-
2"3
.
0 .( /
2"2
2"?
0 2.( /
+"@
2"2
0 .( /
2.
2.
A
0 2.( /
23
23
A
0 2.( /
(.
.+
&
;
2="(
F
HEI
?+
Module
K
SKM 75GB176D
+"((
4L>L
-" *
.( /
+")(
A
2.( /
2
A
4*
'
5
M 5#
?
5
5(
."(
+"+(
HEI
(
N
(
N
2#+
Features
This is an electrostatic discharge sensitive device (ESDS), international standard
!" # $ %
Typical Applications
& ' ()( *
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
)(+ &
,! $ -
GB
2
06-10-2009 NOS
© by SEMIKRON
SKM 75GB176D
®
SEMITRANS 2
Trench IGBT Modules
SKM 75GB176D
Zth
Symbol
Zth(j-c)l
Conditions
Values
Units
4
4
4
4
2
.
?
=
2
.
?
.)+
3(
.2
=
+"+?@?
+"+)3#
+"++2=
MEI
MEI
MEI
MEI
=
+"+++.
4
4
4
4
2
.
?
=
2
.
?
?#+
2(+
?#
=
+"+.#.
+"+=2)
+"++2.
MEI
MEI
MEI
MEI
=
+"++2
Zth(j-c)D
Features
!" # $ %
Typical Applications
& ' ()( *
)(+ &
,! $ -
GB
3
06-10-2009 NOS
© by SEMIKRON
SKM 75GB176D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
06-10-2009 NOS
© by SEMIKRON
SKM 75GB176D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11Typ. CAL diode peak reverse recovery current
Fig. 12Typ. CAL diode peak reverse recovery charge
5
06-10-2009 NOS
© by SEMIKRON
SKM 75GB176D
UL Regognized
File no. E 63 532
J #2
6G
6
J #2
06-10-2009 NOS
© by SEMIKRON