NSR15TW1 Triple RF Schottky Diode These diodes are designed for analog and digital applications, including DC based signal detection and mixing applications. Features: • Low Capacitance (<1 pF) • Low VF (390 mV typical @ 1 mA) • Low VF (1 mV typical @ 1 mA) http://onsemi.com RF SCHOTTKY BARRIER DIODES 15 VOLTS, 30 mA Benefits: • Reduced Parasitic Losses • Accurate Signal Measurement MAXIMUM RATINGS Rating Peak Reverse Voltage Forward Current Operating and Storage Temperature Range Symbol Max Unit VR 15 V IF 30 mA TJ, Tstg –65 to +150 °C 6 5 4 1 2 3 ESD Rating: Class 1 per Human Body Model ESD Rating: Class A per Machine Model 6 THERMAL CHARACTERISTICS Characteristic Maximum Thermal Resistance – Junction to Ambient Symbol Value Unit RJA 500 °C/W 1 2 5 4 3 SC–88 CASE 419B STYLE 15 MARKING DIAGRAM OZ M OZ = Specific Device Code M = Date Code ORDERING INFORMATION Semiconductor Components Industries, LLC, 2002 February, 2002 – Rev. 1 1 Device Package Shipping NSR15TW1T2 SC–88 3000/Tape & Reel Publication Order Number: NSR15TW1/D NSR15TW1 ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit VBR 15 20 – V Reverse Leakage (VR = 1 V) IR – 2 50 nA Forward Voltage (IF = 1 mA) VF1 – 390 415 mV Forward Voltage (IF = 10 mA) VF2 – 530 680 mV Delta VF (IF = 1 mA, All Diodes) VF – 1 15 mV CT – 0.8 1 pF Breakdown Voltage (IR = 10 A) Capacitance (VF = 0 V, f = 1 MHz) 100 k IR, REVERSE CURRENT (nA) IF, FORWARD CURRENT (mA) 100 10 25°C 75°C 1 125°C –25°C 0.1 0.01 10 k 125°C 1k 75°C 100 25°C 10 1 0 0.1 0.2 0.3 0.4 0.5 VF, FORWARD VOLTAGE (V) 0.6 0 0.7 5 10 VR, REVERSE VOLTAGE (V) Figure 1. Forward Current versus Forward Voltage at Temperatures Figure 2. Reverse Current versus Reverse Voltage 1000 RD, DYNAMIC RESISTANCE () CT, CAPACITANCE (pF) 1 0.9 0.8 0.7 0.6 0.5 15 100 10 1 0 1 2 3 4 5 6 VR, REVERSE VOLTAGE (V) 7 8 0.1 Figure 3. Total Capacitance versus Reverse Voltage 1 10 IF, FORWARD CURRENT (mA) 100 Figure 4. Dynamic Resistance versus Forward Current http://onsemi.com 2 100 IF (left scale) 10 10 VF (right scale) 1 0.3 0.4 0.5 0.6 0.7 VF, FORWARD VOLTAGE (V) 0.8 0.1 Figure 5. Typical VF Match at Mixer Bias Levels IF (left scale) 1 VF (right scale) 1 0.1 0.175 0.225 0.275 VF, FORWARD VOLTAGE (V) 0.325 Figure 6. Typical VF Match at Detector Bias Levels 1 10 DC Bias = 3 A 1 0.1 0.1 NSR15TW1 RF IN VDET, (Vdc) VDET, (Vdc) 10 100 10 1 0.1 VF, FORWARD VOLTAGE DIFFERENCE (mV) IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (mA) 100 VF, FORWARD VOLTAGE DIFFERENTIAL (mV) NSR15TW1 VO 18 nH 0.01 0.001 RF IN 0.0001 100 pF 3.3 nH 0.01 68 100 k NSR15TW1 VO 100 pF 4.7 k 0.00001 0.001 –40 –35 –30 –25 –20 –15 –10 Pin, INPUT POWER (dBm) –5 0.000001 –20 –15 –10 0 Figure 7. Typical Output Voltage versus Input Power, Small Signal Detector Operating at 850 MHz 5 10 15 –5 0 Pin, INPUT POWER (dBm) CONVERSION LOSS (dB) 10 9 8 7 0 2 4 6 8 10 LOCAL OSCILLATOR POWER (dBm) 12 Figure 9. Typical Conversion Loss versus L.O. Drive, 2.0 GHz http://onsemi.com 3 25 30 Figure 8. Typical Output Voltage versus Input Power, Large Signal Detector Operating at 915 MHz 12 6 –2 20 NSR15TW1 PACKAGE DIMENSIONS SC–88 (SOT–363) CASE 419B–01 ISSUE G A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. G V 6 5 4 1 2 3 DIM A B C D G H J K N S V –B– S D 6 PL 0.2 (0.008) B M M N J C H INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 0.012 0.016 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 0.30 0.40 STYLE 15: PIN 1. ANODE 2. ANODE 3. ANODE 4. CATHODE 5. CATHODE 6. CATHODE K ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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