Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 26 volt base station equipment. • Typical Performance at 945 MHz, 26 Volts Output Power — 60 Watts PEP Power Gain — 18.0 dB Efficiency — 40% (Two Tones) IMD — –31.5 dBc • Integrated ESD Protection • Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • TO–270 Dual Lead Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. • TO–272 Dual Lead Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. 945 MHz, 60 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs CASE 1265–07, STYLE 1 TO–270 DUAL LEAD PLASTIC MRF9060MR1 CASE 1337–01, STYLE 1 TO–272 DUAL LEAD PLASTIC MRF9060MBR1 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Gate–Source Voltage VGS –0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 223 1.79 Watts W/°C Storage Temperature Range Tstg –65 to +150 °C Operating Junction Temperature TJ 175 °C Symbol Max Unit RθJC 0.56 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 4 MOTOROLA RF DEVICE DATA Motorola, Inc. 2002 MRF9060MR1 MRF9060MBR1 1 ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M2 (Minimum) Charge Device Model MRF9060MR1 MRF9060MBR1 C6 (Minimum) C5 (Minimum) MOISTURE SENSITIVITY LEVEL Test Methodology Per JESD 22–A113 Rating MRF9060MR1 MRF9060MBR1 1 3 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 1 µAdc Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 µAdc) VGS(th) 2 2.8 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 450 mAdc) VGS(Q) 3 3.7 5 Vdc Drain–Source On–Voltage (VGS = 10 Vdc, ID = 1.3 Adc) VDS(on) — 0.21 0.4 Vdc gfs — 5.3 — S Input Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss — 101 — pF Output Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 53 — pF Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2.5 — pF OFF CHARACTERISTICS ON CHARACTERISTICS Forward Transconductance (VDS = 10 Vdc, ID = 4 Adc) DYNAMIC CHARACTERISTICS (continued) MRF9060MR1 MRF9060MBR1 2 MOTOROLA RF DEVICE DATA ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Two–Tone Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Gps 17 18 — dB Two–Tone Drain Efficiency (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) η 37 40 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IMD — –31.5 –28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IRL — –14.5 –9 dB Two–Tone Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHZ) Gps — 18 — dB Two–Tone Drain Efficiency (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHZ) η — 40 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHZ) IMD — –31 — dBc Input Return Loss (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHZ) IRL — –12.5 — dB FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) MOTOROLA RF DEVICE DATA MRF9060MR1 MRF9060MBR1 3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 0.240″ x 0.060″ Microstrip 0.240″ x 0.060″ Microstrip 0.500″ x 0.100″ Microstrip 0.100″ x 0.270″ x 0.080″, Taper 0.330″ x 0.270″ Microstrip 0.120″ x 0.270″ Microstrip 0.270″ x 0.520″ x 0.140″, Taper 0.240″ x 0.520″ Microstrip 0.340″ x 0.520″ Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 0.060″ x 0.520″ Microstrip 0.360″ x 0.270″ Microstrip 0.060″ x 0.270″ Microstrip 0.130″ x 0.060″ Microstrip 0.300″ x 0.060″ Microstrip 0.210″ x 0.060″ Microstrip 0.600″ x 0.060″ Microstrip 0.290″ x 0.060″ Microstrip 0.340″ x 0.060″ Microstrip Figure 1. 930–960 MHz Broadband Test Circuit Schematic Table 1. 930–960 MHz Broadband Test Circuit Component Designations and Values Part Description Value, P/N or DWG Manufacturer B1 Short Ferrite Bead 95F786 Newark B2 Long Ferrite Bead 95F787 Newark C1, C7, C13, C14 47 pF Chip Capacitors, B Case 100B470JP 500X ATC C2, C3, C11 0.8–8.0 Gigatrim Variable Capacitors 44F3360 Newark C4, C5 11 pF Chip Capacitors, B Case (MRF9060MR1) 10 pF Chip Capacitors, B Case (MRF9060MBR1) 100B110JP 500X 100B100JP 500X ATC C6, C15, C16 10 mF, 35 V Tantalum Chip Capacitors 93F2975 Newark C8, C9 10 pF Chip Capacitors, B Case 100B100JP 500X Newark C10 3.9 pF Chip Capacitor, B Case 100B3R9CP 500X ATC C12 1.7 pF Chip Capacitor, B Case 100B1R7BP 500X ATC C17 220 mF Electrolytic Chip Capacitor 14F185 Newark L1, L2 12.5 nH Inductors A04T–5 Coilcraft N1, N2 N–Type Panel Mount, Stripline 3052–1648–10 Avnet WB1, WB2 15 mil Brass Wear Blocks Board Material 30 mil Glass Teflon, εr = 2.55 Copper Clad, 2 oz Cu RF–35–0300 Taconic PCB Etched Circuit Board TO–270/TO–272 Surface/Bolt DSelectronics MRF9060MR1 MRF9060MBR1 4 MOTOROLA RF DEVICE DATA CUT OUT AREA MRF9060M MRF9060MB Figure 2. 930–960 MHz Broadband Test Circuit Component Layout MOTOROLA RF DEVICE DATA MRF9060MR1 MRF9060MBR1 5 η !" #$% &'( ) *+ ,##-./ 012 #-. 34"5-6 ; /<<' 33<&!( ;/<';+ 3<&!"( /<<'<+<&!( η/<+ ''=<&>( 7/ 8.9$.-": &;12( Figure 3. Class AB Broadband Circuit Performance /<<'<+<&!( *+ *+ ? *+ ? !" 7 ;12 7 ? ;12 ) *+ *+ *+ !" 7 ;12 7 ? ;12 *+ #$%/ ' &+3( ' #$%/ ' &+3( ' Figure 4. Power Gain versus Output Power Figure 5. Intermodulation Distortion versus Output Power 8! 8!.8 %@ 8!.8 %@ 8!.8 !" ) *+ 7 ;12 η /<<'<+<&!( !" ) *+ 7 ;12 7 ? ;12 ? #$%/ ' &+3( ' #$%/ ' &+3( +? Figure 6. Intermodulation Distortion Products versus Output Power Figure 7. Power Gain and Efficiency versus Output Power MRF9060MR1 MRF9060MBR1 6 η/<+<''=<&>( ) *+ ? ;/ ';+<3<&!"( ;/ ';+<3<&!"( MOTOROLA RF DEVICE DATA /<<'<+<&!( η !" ) *+ 7 ;12 7 ? ;12 ; ;/ ';+<3<&!"( η/<+<''=<&>( #$%/ ' &+3( ' Figure 8. Power Gain, Efficiency, and IMD versus Output Power MOTOROLA RF DEVICE DATA MRF9060MR1 MRF9060MBR1 7 7 ;12 # Ω 7 ;12 #$8". 7 ;12 A#4!B 7 ;12 / ) *+/ #$% ' f MHz Zload Ω Zsource Ω 930 0.63 + j0.57 1.8 + j0.84 945 0.60 + j0.41 1.7 + j0.55 960 0.57 + j0.45 1.6 + j0.36 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. $%$% ;4%"@5-6 .%,#80 .C5". -!.8 .% -$% ;4%"@5-6 .%,#80 Z source Z load Figure 9. Series Equivalent Input and Output Impedance MRF9060MR1 MRF9060MBR1 8 MOTOROLA RF DEVICE DATA NOTES MOTOROLA RF DEVICE DATA MRF9060MR1 MRF9060MBR1 9 PACKAGE DIMENSIONS B E1 2X 2X D3 PIN ONE ID E4 444 D 444 ; ; + 2X + D1 b1 E A ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ E3 PIN 2 D2 PIN 3 EXPOSED HEATSINK AREA PIN 1 DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 F b1 c1 aaa BOTTOM VIEW c1 H '3D ? ;'3D 1? ? '' ;'33 + '+'3 ' +3;' =?;? ? +; +' 1 3 +' + '+ + 3 ' 1 1' '+ 1'' 1' '+ 'E3 1' +3 = + 1' 1' + '? ? ;'33 “F + “'F ' ; 3? ++' 3 3 ? ' 3'? ;'33 “F + “'F ' ; ;3;+1 + +' ''G ;' + +; +' 1? ? ;'3 H '3 ' +;+ 3? ++' +;+ 3 31+ ' ? + 'E'33 1' H ;'3 + ;+E;; ;+'+ ? ? +;3 + + ' '';' + +; +' 1? ? ;'3 + +'3 1 ' “IF =? ? ;'33 “F + “'F ' ; 3? ++' 3 3 ? ' 3'? ;'33 “F + “'F ' ; ;3;+1 + +' ''G ;' + +; +' ? DATUM PLANE A A1 INCHES MIN MAX ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ?<3 ? ? ? ? ? MILLIMETERS MIN MAX ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? <3 ? ? ? ? ? 3=' D ? + ? +' ? 3' 2X A2 NOTE 7 F E2 D ZONE J CASE 1265–07 ISSUE F TO–270 DUAL LEAD PLASTIC MRF9060MR1 MRF9060MR1 MRF9060MBR1 10 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS r1 2X 444 ; + A E1 B ; ; PIN 3 PIN ONE ID D1 2X 444 b1 ; + D ; 1 2 PIN ONE ID E VIEW Y–Y c1 H DATUM PLANE A A1 A2 F ZONE "J" 7 Y Y C SEATING PLANE 3=' D ? + ? +' ? 3' CASE 1337–01 ISSUE O TO–272 DUAL LEAD PLASTIC MRF9060MBR1 MOTOROLA RF DEVICE DATA '3D ? ;'3D 1? ? '' ;'33 + '+'3 ' +3;' =?;/ ? ? +; +' 1 3 +' + 1' '+ + 3 ' 1 1' '+ 1'' 1' '+ 'E3 1' +3 = + 1' 1' + '? ? ;'33 FF + F'F ' ; 3? ++' 3 3 ? ' 3'? ;'33 FF + F'F ' ; ;3;+1 + +' '';' + +; +' 1? ? ;'3 FHF '3 ' +;+ 3? ++' +;+ 3 31+ ' ? + 'E'33 1' FHF ;'3 + ;+E;; ;+'+ ? ? +;3 + + ' '';' + +; +' 1? ? ;'3 + +'3 1 ' FIF =? DIM A A1 A2 D D1 E E1 F b1 c1 r1 aaa INCHES MIN MAX ? ? ? ? ? ? ? ? ?<3 ? ? ? ? ?<3 ? ? ? ? ? ? ? MILLIMETERS MIN MAX ? ? ? ? ? ? ? ? ?<3 ? ? ? ? ? <3 ? ? ? ? ? ? ? MRF9060MR1 MRF9060MBR1 11 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T. Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF9060MR1 MRF9060MBR1 12 ◊ MOTOROLA RF DEVICE DATA MRF9060M/D