MOTOROLA MRF19125SR3

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by MRF19125/D
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
• Typical 2–Carrier N–CDMA Performance for VDD = 26 Volts,
IDQ = 1300 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz
IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 –885 kHz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 –2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power — 24 Watts Avg.
Power Gain — 13.6 dB
Efficiency — 22%
ACPR — –51 dB
IM3 — –37.0 dBc
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 125 Watts (CW)
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch
Reel.
1990 MHz, 125 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465B–03, STYLE 1
(NI–880)
(MRF19125)
CASE 465C–02, STYLE 1
(NI–880S)
(MRF19125S)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Gate–Source Voltage
VGS
+15, –0.5
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
330
1.89
Watts
W/°C
Storage Temperature Range
Tstg
–65 to +200
°C
Operating Junction Temperature
TJ
200
°C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
RθJC
0.53
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
MOTOROLA
RF DEVICE DATA
 Motorola,
Inc. 2002
MRF19125 MRF19125S MRF19125SR3
1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
—
—
Vdc
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
µAdc
gfs
—
9
—
S
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 µAdc)
VGS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 1300 mAdc)
VGS(Q)
2.5
3.9
4.5
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 3 Adc)
VDS(on)
—
0.185
0.21
Vdc
Crss
—
5.4
—
pF
Characteristic
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 µAdc)
ON CHARACTERISTICS
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
FUNCTIONAL TESTS (In Motorola Test Fixture) 2–Carrier N–CDMA, 1.2288 MHz Channel Bandwidth Carriers. Peak/Avg = 9.8 dB
@ 0.01% Probability on CCDF.
Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
Gps
12
13.5
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
η
19
22
—
%
IMD
—
–37
–35
dBc
ACPR
—
–51
–47
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
IRL
—
–13
–9
dB
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 125 W CW, IDQ = 1300 mA, f = 1930 MHz,
VSWR = 5:1, All Phase Angles at Frequency of Test)
Ψ
Intermodulation Distortion
(VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3 measured
over 1.2288 MHz Bandwidth at f1 –2.5 MHz and f2 +2.5 MHz)
Adjacent Channel Power Ratio
(VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; ACPR
measured over 30 kHz Bandwidth at f1 –885 MHz and f2 +885 MHz)
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
MRF19125 MRF19125S MRF19125SR3
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Two–Tone Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 125 W PEP, IDQ = 1300 mA, f1 = 1930 MHz,
f2 = 1990 MHz, Tone Spacing = 100 kHz)
Gps
—
13.5
—
dB
Two–Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 125 W PEP, IDQ = 1300 mA, f1 = 1930 MHz,
f2 = 1990 MHz, Tone Spacing = 100 kHz)
η
—
35
—
%
Third Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 125 W PEP, IDQ = 1300 mA, f1 = 1930 MHz,
f2 = 1990 MHz, Tone Spacing = 100 kHz)
IMD
—
–30
—
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 125 W PEP, IDQ = 1300 mA, f1 = 1930 MHz,
f2 = 1990 MHz, Tone Spacing = 100 kHz)
IRL
—
–13
—
dB
P1dB
—
130
—
W
FUNCTIONAL TESTS (In Motorola Test Fixture)
Pout, 1 dB Compression Point
(VDD = 26 Vdc, IDQ = 1300 mA, f = 1990 MHz)
MOTOROLA RF DEVICE DATA
MRF19125 MRF19125S MRF19125SR3
3
Z1, Z7
Z2
Z3
Z4
Z5
Z6
Z8
0.500″ x 0.084″ Microstrip
1.105″ x 0.084″ Microstrip
0.360″ x 0.895″ Microstrip
0.920″ x 0.048″ Microstrip
0.605″ x 1.195″ Microstrip
0.800″ x 0.084″ Microstrip
0.660″ x 0.095″ Microstrip
Board
PCB
0.030″ Glass Teflon,
Keene GX–0300–55–22, εr = 2.55
Etched Circuit Boards
MRF19125 Rev. 5, CMR
Figure 1. MRF19125 Test Circuit Schematic
Table 1. MRF19125 Test Circuit Component Designations and Values
Designators
Description
B1
Short Ferrite Bead, Fair Rite #2743019447
C1
51 pF Chip Capacitor, ATC #100B510JCA500X
C2, C7
5.1 pF Chip Capacitors, ATC #100B5R1JCA500X
C3, C10
1000 pF Chip Capacitors, ATC #100B102JCA500X
C4, C11
0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS
C5
0.1 mF Tantalum Chip Capacitor, Kemet #T491C105M050
C6
10 pF Chip Capacitor, ATC #100B100JCA500X
C8
10 mF Tantalum Chip Capacitor, Kemet #T491X106K035AS4394
C9, C12, C13, C14
22 mF Tantalum Chip Capacitors, Kemet #T491X226K035AS4394
L1
1 Turn, #20 AWG, 0.100″ ID, Motorola
N1, N2
Type N Flange Mounts, Omni Spectra #3052–1648–10
R1
1.0 kΩ, 1/8 W Chip Resistor
R2
220 kΩ, 1/8 W Chip Resistor
R3
10 Ω, 1/8 W Chip Resistor
MRF19125 MRF19125S MRF19125SR3
4
MOTOROLA RF DEVICE DATA
CUT OUT
MRF19125 Rev 5
Figure 2. MRF19125 Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
MRF19125 MRF19125S MRF19125SR3
5
'
η
$
C* C*<C
9 C*<C
9 C*<C
η
!" #!$%& "
Figure 3. 2-Carrier CDMA ACPR, IM3, Power Gain and
Drain Efficiency versus Output Power
Figure 4. Intermodulation Distortion
Products versus Output Power
5 7 8$
8$
./
4 "5", #')6&
Figure 6. 2-Carrier N-CDMA Broadband
Performance
./
7 *+
5 7 8$
4 7 ')6
η
?;
5 7 8$
4 7 ')6
@)6 ;< %.:+?;1
η
'
$
7 *+
7 !:/ #$012&
5 7 8$
Figure 5. Third Order Intermodulation
Distortion versus Output Power
!" #!$%& "
'
8$
3:CC?<C 3'$ 2 ')6 :CC?<C %.:+?;1
2 ')6 9:;;<= :;*>?*9
<:@A$012 7 2 B 2
- CD:D?=?E #&
8$
8$
η
η($("",(#-&
'()("
"'$(%(#*+&
7 *+
4 7 ')6
@)6 ;< %.:+?;1
η($("",(#-&( ./ (!"($(#*&
!" #!$% $012& 3'$
?; (((!"(#!$%& ./ ((!"($(#*&
2
2
2
2
!" #!$%&
$ %, #&
Figure 7. CW Performance
Figure 8. Two-Tone Intermodulation Distortion and
Drain Efficiency versus Drain Supply
MRF19125 MRF19125S MRF19125SR3
6
η($("",(#-&
./
'(#*+& $(#*+& ("(%%(#*&
7 *+
5 7 8$
4 7 ')6
@)6 ;< %.:+?;1
' "'$(%(#*+&
'(#*+& $(#*+&
7 *+ 5 7 8$
4
7 2 ')6 4 7 2 ')6
2 ')6 9:;;<= :;*>?*9
<:@A$012 7 2 * B 2
- CD:D?=?E #&
' "'$(%(#*+&
η($("",(#-&
η($("",(#-&( ./ (!"($(#*&
TYPICAL CHARACTERISTICS
MOTOROLA RF DEVICE DATA
8$
./ ((!"($(#*&
2
8$
8$
8$
2
7 *+
4 7 ')6
@)6 ;< %.:+?;1
η
7 *+
7 ! #"&
5 7 8$
@)6 ;< %.:+?;1
C* C*<C
4
2 ')6 !
7 *+
5 7 8$
4 7 ')6
#*&
' "'$(%(#*+&
'
Figure 10. Two-Tone Broadband Performance
4 "5", #')6&
Figure 9. Two-Tone Power Gain versus
Output Power
./
!" #!$%& "
("(%%(#*&
' "'$(%(#*+&
5 7 8$
./ ((!"($(#*&η($("",(#-&
9 C*<C
4
2 ')6 !
$ B
@)6 !
$ B
@)6 !
9 C*<C
' B
2 ')6 !
2 2
2
' B
2 ')6 !
2
2
2
2
2
D4 " %$ #@)6&
4 "5", #')6&
Figure 11. Intermodulation Distortion Products
versus Two–Tone Tone Spacing
Figure 12. 2-Carrier N-CDMA Spectrum
MOTOROLA RF DEVICE DATA
2
MRF19125 MRF19125S MRF19125SR3
7
4 7 ')6
4 7 ')6
?;
7 5 7 8$ 7 ! #$012&
f
MHz
4 7 ')6
G
7 Ω
4 7 ')6
Zin
Ω
ZOL*
Ω
1930
1.43 + j5.01
0.75 + j0.93
1960
1.51 + j4.88
0.71 + j0.89
1990
1.56 + j4.93
0.68 + j1.02
Zin
= Complex conjugate of source impedance.
ZOL* = Complex conjugate of the optimum load
impedance at a given output power, voltage,
IMD, bias current and frequency.
<F
;.
':+9?;1
<>C@
.
':+9?;1
<>C@
<0?+<
;*<C </
Z
in
G >:/ +9/<; D:/<* ; C:*<44/ D<><<; 1:?; .
.><C *C:?; <44?+?<;+E :;* ?;<C8*=:?; *?/C?;2
Z
*
OL
Figure 13. Series Equivalent Input and Output Impedance
MRF19125 MRF19125S MRF19125SR3
8
MOTOROLA RF DEVICE DATA
NOTES
MOTOROLA RF DEVICE DATA
MRF19125 MRF19125S MRF19125SR3
9
NOTES
MRF19125 MRF19125S MRF19125SR3
10
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
B
"%F
2 '"% $ "$ " $%
,
2'
2
2 '"%F )2
2 '"% ) % '"$%" 2 #2& $!$,
' $H$" ,2
2 "''"" "" '"% 2
#2& $%" ' %"!2
4
G
2X
1
Q
DDD
'
$
'
'
B
(FLANGE)
3
K
2
DDD
'
D
$
'
'
DDD
'
$
'
'
M
N
+++
$
'
'
R
(INSULATOR)
+++
$
'
'
S
(LID)
'
:::
$
'
'
(LID)
'
(INSULATOR)
'
H
C
F
E
T
A
A
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
2
2
2
2
2
2
2
2
2
2
2
2
2
(%
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2("
2
("
2
("
MILLIMETERS
MIN
MAX
2
2
2
2
2
2
2
2
2
2
2
2
2(%
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
("
2("
2
("
%," F
2 $
2 $"
2 %"
SEATING
PLANE
CASE 465B–03
ISSUE C
(NI–880)
(MRF19125)
(FLANGE)
B
"%F
2 '"% $ "$ " $%
,
2'
2
2 '"%F )2
2 '"% ) % '"$%" 2 #2& $!$,
' $H$" ,2
1
B
(FLANGE)
K
2
DDD
'
D
$
'
M
DDD
'
$
'
'
$
'
R
(INSULATOR)
+++
'
N
+++
'
'
$
S
(LID)
:::
'
'
'
$
'
(LID)
'
(INSULATOR)
'
H
C
F
E
T
A
A
(FLANGE)
MOTOROLA RF DEVICE DATA
SEATING
PLANE
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2("
2
("
2
("
MILLIMETERS
MIN
MAX
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
("
2("
2
("
%," F
2 $
2 $"
2 %"
CASE 465C–02
ISSUE A
(NI–880S)
(MRF19125S)
MRF19125 MRF19125S MRF19125SR3
11
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
MOTOROLA and the
logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners.
E Motorola, Inc. 2002.
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HOME PAGE: http://www.motorola.com/semiconductors/
MRF19125 MRF19125S MRF19125SR3
◊
12
MOTOROLA RF DEVICE MRF19125/D
DATA