@vic SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403LT1 TRANSISTOR (PNP) 1. BASE 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 0.3 W (Tamb=25℃) PCM: Collector current -0.6 A ICM: Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range 0. 95 0. 4 0. 95 2. 9 1. 9 2. 4 1. 3 TJ, Tstg: -55℃ to +150℃ Unit: mm ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter unless otherwise specified) Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100µA , IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 V Collector cut-off current ICBO VCB=-35V, IE=0 -0.1 µA Collector cut-off current ICEO VCE=-35V, IB=0 -0.1 µA Emitter cut-off current IEBO VEB=-4V, IC=0 -0.1 µA DC current gain hFE VCE=-2V, IC= -150mA Collector-emitter saturation voltage VCE(sat) IC=-150mA, IB=-15mA -0.4 V Base-emitter saturation voltage VBE(sat) IC=- 150mA, IB=-15mA -0.95 V fT Transition frequency DEVICE MARKING MMBT4403LT1=2T VCE= -10V, IC= -20mA f = 100MHz 100 200 300 MHz