FDD3860 tm N-Channel PowerTrench® MOSFET 100V, 29A, 36mΩ Features General Description Max rDS(on) = 36mΩ at VGS = 10V, ID = 5.9A 100% UIL tested This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor‘s advanced Power Trench® process. This part is tailored for low rDS(on) and low Qg figure of merit, with avalanche ruggedness for a wide range of switching applications. RoHS Compliant Applications High performance trench technology for extremely low rDS(on) DC-AC Conversion Synchronous Rectifier D D G S G D -PA K TO -2 52 (TO -252) S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Silicon limited) TC = 25°C -Continuous TA = 25°C ID TJ, TSTG ±20 V (Note 1a) 6.2 A 60 Single Pulse Avalanche Energy PD Units V 29 -Pulsed EAS Ratings 100 (Note 3) Power Dissipation TC = 25°C Power Dissipation TA = 25°C 121 69 (Note 1a) Operating and Storage Junction Temperature Range 3.1 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1.8 (Note 1a) 40 °C/W Package Marking and Ordering Information Device Marking FDD3860 ©2008 Fairchild Semiconductor Corporation FDD3860 Rev.C1 Device FDD3860 Package D-PAK (TO-252) 1 Reel Size 13’’ Tape Width 12mm Quantity 2500 units www.fairchildsemi.com FDD3860 N-Channel PowerTrench® MOSFET October 2008 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient 100 V ID = 250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 80V, VGS = 0V 1 µA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA 4.5 V 98 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient 2.5 ID = 250µA, referenced to 25°C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 3.8 -11.4 mV/°C VGS = 10V, ID = 5.9A 29 36 VGS = 10V, ID = 5.9A, TJ = 125°C 51 64 VDS = 10V, ID = 5.9A 20 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 50V, VGS = 0V, f = 1MHz f = 1MHz 1310 1740 pF 100 130 pF 45 70 pF Ω 1.6 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time 16 29 ns 10 21 td(off) Turn-Off Delay Time ns 24 39 tf ns Fall Time 7 15 ns Qg Total Gate Charge at 10V 22 31 nC Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 50V, ID = 5.9A, VGS = 10V, RGEN = 6Ω VDD = 50V, ID = 5.9A 7.1 nC 6.3 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 2.0A (Note 2) 0.7 1.2 VGS = 0V, IS = 5.9A (Note 2) 0.8 1.3 34 55 ns 40 64 nC IF = 5.9A, di/dt = 100A/µs V Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a) 40°C/W when mounted on a 1 in2 pad of 2 oz copper b) 96°C/W when mounted on a minimum pad. 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3: Starting TJ = 25°C, L = 3mH, IAS = 9A, VDD = 100V, VGS = 10V. ©2008 Fairchild Semiconductor Corporation FDD3860 Rev.C1 2 www.fairchildsemi.com FDD3860 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 3.0 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = 10V 50 VGS = 8V VGS = 7V 40 30 20 10 VGS = 6V 0 0 1 2 3 4 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 60 2.5 VGS = 6V VGS = 7V 2.0 VGS = 8V 1.5 VGS = 10V 1.0 0.5 0 5 10 20 VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO 1.2 1.0 0.8 0.6 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.4 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX ID = 5.9A 80 60 TJ = 125oC 40 TJ = 25oC 20 0 -50 5 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 100 60 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 50 ID, DRAIN CURRENT (A) 60 100 ID = 5.9A VGS = 10V 1.6 0.4 -75 50 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.2 1.8 40 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics 2.0 30 VDS = 10V 40 30 TJ = 150oC 20 TJ = 25oC 10 TJ = -55oC 0 2 4 6 8 VGS = 0V 10 TJ = 150oC 1 TJ = 25oC 0.1 TJ = -55oC 0.01 1E-3 0.0 10 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2008 Fairchild Semiconductor Corporation FDD3860 Rev.C1 3 1.2 www.fairchildsemi.com FDD3860 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 3000 VDD = 25V ID = 5.9A Ciss 1000 8 VDD = 75V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 50V 6 4 Coss 100 Crss 2 f = 1MHz VGS = 0V 10 0.1 0 0 5 10 15 20 25 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 10 35 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) 8 6 4 TJ = 25oC TJ = 125oC 2 1 0.01 0.1 1 10 28 VGS = 10V 21 14 o RθJC = 1.8 C/W 7 0 25 100 50 100 125 150 o Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 5 10 P(PK), PEAK TRANSIENT POWER (W) 100 ID, DRAIN CURRENT (A) 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) 10 100us 1 THIS AREA IS LIMITED BY rds(on) 1ms SINGLE PULSE TJ = MAX RATED 10ms DC o RθJC = 1.8 C/W TC = 25oC 0.1 0.1 1 10 100 4 10 SINGLE PULSE o RθJC = 1.8 C/W 3 10 2 10 10 -6 10 300 -5 10 -4 10 -3 10 -2 10 -1 10 1 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2008 Fairchild Semiconductor Corporation FDD3860 Rev.C1 VGS = 10V Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDD3860 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJC 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 FOR TEMPERATURES ABOVE 25oC DERATE PEAK PDM CURRENT AS FOLLOWS: 150 – T C -----------------------I = I 25 t1 125 t2 TC = 25oC NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC 0.01 SINGLE PULSE o RθJC = 1.8 C/W 0.001 -6 10 -5 -4 10 -3 10 -2 10 -1 10 10 1 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 40 C/W (Note 1a) 0.001 -4 10 -3 10 -2 10 -1 10 1 100 10 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Transient Thermal Response Curve NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 0.01 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE 0.001 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 96 C/W (Note 1b) 0.0001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 15. Transient Thermal Response Curve ©2008 Fairchild Semiconductor Corporation FDD3860 Rev.C1 5 www.fairchildsemi.com FDD3860 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ ® ® tm PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ The Power Franchise® * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37 ©2008 Fairchild Semiconductor Corporation FDD3860 Rev.C1 6 www.fairchildsemi.com FDD3860 N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.