FDD6796A / FDU6796A_F071 N-Channel PowerTrench® MOSFET 25 V, 5.7 mΩ Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Max rDS(on) = 5.7 mΩ at VGS = 10 V, ID = 20 A Max rDS(on) = 15.0 mΩ at VGS = 4.5 V, ID = 15.2 A 100% UIL tested RoHS Compliant Applications Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture D D G G G D S S Short-Lead I-PAK (TO-251AA) D-PAK (TO-252) S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID Ratings 25 Units V ±20 V TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C 40 67 (Note 1a) 20 -Pulsed 150 Single Pulse Avalanche Energy EAS PD TJ, TSTG A (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 40 42 (Note 1a) Operating and Storage Junction Temperature Range 3.7 -55 to +175 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 3.6 (Note 1a) 40 °C/W Package Marking and Ordering Information Device Marking FDD6796A Device FDD6796A Package D-PAK (TO-252) Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units FDU6796A FDU6796A_F071 TO-251AA N/A(Tube) N/A 75 units ©2009 Fairchild Semiconductor Corporation FDD6796A / FDU6796A_F071 Rev.C1 1 www.fairchildsemi.com FDD6796A / FDU679A_F071 N-Channel PowerTrench® MOSFET March 2009 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V 1 µA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 3.0 V 25 V 16 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.0 1.9 -6 mV/°C VGS = 10 V, ID = 20 A 4.3 5.7 VGS = 4.5 V, ID = 15.2 A 11.1 15.0 VGS = 10 V, ID = 20 A, TJ = 150 °C 6.5 8.6 VDS = 5 V, ID = 20 A 118 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 13 V, VGS = 0 V, f = 1 MHz 1336 1780 pF 298 400 pF 266 400 pF Ω 1.2 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg 8 16 7 14 ns ns 19 34 ns VDD = 13 V, ID = 20 A, VGS = 10 V, RGEN = 6 Ω 4 10 ns Total Gate Charge VGS = 0 V to 10 V 24 34 nC Qg Total Gate Charge VGS = 0 V to 5 V 14 20 Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 13 V, ID = 20 A nC 4.0 nC 5.7 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 3.1 A (Note 2) 0.8 1.2 VGS = 0 V, IS = 20 A (Note 2) 0.9 1.3 IF = 20 A, di/dt = 100 A/µs V 15 27 ns 4 10 nC Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a) 40 °C/W when mounted on a 1 in2 pad of 2 oz copper b) 96 °C/W when mounted on a minimum pad 2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3: EAS of 40 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 9 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 21 A. ©2009 Fairchild Semiconductor Corporation FDD6796A / FDU6796A_F071 Rev.C1 2 www.fairchildsemi.com FDD6796A / FDU679A_F071 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted VGS = 8 V VGS = 10 V VGS = 6 V ID, DRAIN CURRENT (A) 120 VGS = 4.5 V 90 VGS = 4 V 60 VGS = 3.5 V 30 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 0 0.0 4 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 150 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 3 VGS = 3.5 V VGS = 4 V VGS = 8 V VGS = 10 V 0 0.5 1.0 1.5 2.0 2.5 0 30 60 90 120 150 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.8 20 ID = 20 A VGS = 10 V rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 6 V 1 VDS, DRAIN TO SOURCE VOLTAGE (V) 0.6 -75 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (oC) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX ID = 20 A 15 10 TJ = 150 oC 5 TJ = 25 oC 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 150 200 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 120 ID, DRAIN CURRENT (A) VGS = 4.5 V 2 VDS = 3 V 90 60 TJ = 175 oC 30 TJ = 25 oC TJ = -55 oC 0 0 1 2 3 4 5 VGS = 0 V 10 TJ = 175 oC TJ = -55 oC TJ = 25 oC 1 0.1 0.2 6 VGS, GATE TO SOURCE VOLTAGE (V) 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDD6796A / FDU6796A_F071 Rev.C1 100 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDD6796A / FDU679A_F071 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 5000 ID = 20 A 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 10 V 6 VDD = 13 V VDD = 16 V 4 Ciss 1000 Coss 2 f = 1 MHz VGS = 0 V 100 0.1 0 0 5 10 15 20 25 30 1 Figure 7. Gate Charge Characteristics 80 ID, DRAIN CURRENT (A) 40 TJ = 125 oC 10 TJ = 25 oC TJ = 150 oC 60 VGS = 10 V 40 Limited by Package 20 o VGS = 4.5 V RθJC = 3.6 C/W 1 0.001 0.01 0.1 1 10 0 25 100 50 75 125 150 175 o Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 2000 200 100 P(PK), PEAK TRANSIENT POWER (W) 10 us 100 us 10 THIS AREA IS LIMITED BY rDS(on) 1 ms 10 ms SINGLE PULSE TJ = MAX RATED 100 ms RθJC = 3.6 oC/W DC TC = 25 oC 0.1 0.1 100 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) 1 30 Figure 8. Capacitance vs Drain to Source Voltage 100 IAS, AVALANCHE CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) ID, DRAIN CURRENT (A) Crss 1 10 100 SINGLE PULSE RθJC = 3.6 oC/W TC = 25 oC 100 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 10 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2009 Fairchild Semiconductor Corporation FDD6796A / FDU6796A_F071 Rev.C1 VGS = 10 V 1000 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDD6796A / FDU679A_F071 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJC 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJc + TC SINGLE PULSE o RθJC = 3.6 C/W 0.01 -5 10 -4 -3 10 -2 10 -1 10 10 1 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Case Transient Thermal Response Curve 2 1 NORMALIZED THERMAL IMPEDANCE, ZθJA DUTY CYCLE-DESCENDING ORDER 0.1 0.01 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 96 C/W 0.001 0.0005 -4 10 (Note 1b) -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Junction-to-Ambient Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDD6796A / FDU6796A_F071 Rev.C1 5 www.fairchildsemi.com FDD6796A / FDU679A_F071 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ ™ TinyPower™ Saving our world, 1mW /W /kW at a time™ TinyPWM™ SmartMax™ TinyWire™ SMART START™ µSerDes™ SPM® STEALTH™ SuperFET™ UHC® SuperSOT™-3 Ultra FRFET™ SuperSOT™-6 UniFET™ SuperSOT™-8 VCX™ SupreMOS™ VisualMax™ SyncFET™ XS™ ® ® tm PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ The Power Franchise® * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37 ©2009 Fairchild Semiconductor Corporation FDD6796A / FDU6796A_F071 Rev.C1 6 www.fairchildsemi.com FDD6796A / FDU679A_F071 N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.