PD - 94721 IRL7NJ3802 12V, N-CHANNEL HEXFET® POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number IRL7NJ3802 RDS(on) BVDSS 12V 0.0085 ID 22A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. SMD-0.5 Features: n n n n n n n Low RDS(on) Avalanche Energy Ratings Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 4.5V, TC = 25°C ID @ VGS = 4.5V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Operating Junction Units 22* 22* 88 50 0.4 ±12 130 22 5.0 -55 to 150 W W/°C V mJ A mJ o Storage Temperature Range Package Mounting Surface Temperature Weight A C 300 (for 5 s) 1.0 g * Current is limited by package For footnotes refer to the last page www.irf.com 1 08/13/03 IRL7NJ3802 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min Drain-to-Source Breakdown Voltage ∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Typ Max Units 12 — — V — 0.009 — V/°C — — 0.6 42 — — — — — — — — 0.0085 Ω 0.03 1.9 V — S( ) 100 µA 250 Ω Parameter BVDSS IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 4.0 100 -100 41 12 10.5 15 115 30 25 — Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 2470 2130 500 — — — pF Rg Gate Resistance — 1.9 — Ω nA nC Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1.0mA VGS = 4.5V, ID = 22A VGS = 2.8V, ID = 22A VDS = VGS, ID = 250µA VDS = 6.0V, IDS = 22A VDS = 9.6V ,VGS=0V VDS = 9.6V, VGS = 0V, TJ =125°C VGS = 12V VGS = -12V VGS =4.5V, ID = 22A VDS = 6.0V VDD = 6.0V, ID = 22A, VGS = 4.5V, RG = 6.0Ω ns Measured from the center of drain pad to center of source pad nH VGS = 0V, VDS = 6.0V f = 1.0MHz f = 1.33MHz, open drain Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ — — — — 22* 88 A VSD trr Q RR Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge — — — — — — 1.2 40 40 V nS nC ton Forward Turn-On Time Test Conditions Tj = 25°C, IS = 22A, VGS = 0V Tj = 25°C, IF = 22A, di/dt ≤ 100A/µs VDD ≤ 6.0V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max — — 2.5 Units Test Conditions °C/W Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com IRL7NJ3802 VGS TOP 10V 5.0V 4.5V 3.0V 2.5V 2.25V 2.0V BOTTOM 1.75V 100 10 1.75V 1 1000 100 60µs PULSE WIDTH Tj = 25°C 0.1 0.1 1 10 10 1.75V 0.1 T J = 150°C T J = 25°C VDS = 10V 15 60µs PULSE WIDTH 2.5 3 3.5 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com RDS(on) , Drain-to-Source On Resistance (Normalized) ID , Drain-to-Source Current ( Α) 2.0 2 10 100 Fig 2. Typical Output Characteristics 100 1.5 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1 60µs PULSE WIDTH Tj = 150°C 1 100 VDS , Drain-to-Source Voltage (V) 10 VGS 10V 5.0V 4.5V 3.0V 2.5V 2.25V 2.0V BOTTOM 1.75V TOP ID , Drain-to-Source Current (A) ID , Drain-to-Source Current (A) 1000 ID = 22A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRL7NJ3802 VGS = 0V, f = 1 MHz Ciss = C gs + Cgd, C ds Crss = Cgd 4500 C, Capacitance(pF) 4000 16 SHORTED VGS , Gate-to-Source Voltage (V) 5000 Coss = Cds + Cgd 3500 3000 Ciss 2500 2000 Coss 1500 1000 Crss 500 0 ID = 22A VDS = 9.6V VDS = 6V 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 1 10 0 100 10 VDS, Drain-to-Source Voltage (V) 40 50 60 1000 100 ID, Drain-to-Source Current (A) T J = 150°C ISD , Reverse Drain Current ( Α) 30 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage T J = 25°C OPERATION IN THIS AREA LIMITED BY R DS(on) 100 10 1 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 20 QG , Total Gate Charge (nC) 100µs 1 1.4 1ms 10 10ms Tc = 25°C Tj = 150°C Single Pulse 0.1 1 10 100 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRL7NJ3802 70 LIMITED BY PACKAGE VGS 60 I D , Drain Current (A) RD VDS D.U.T. RG + 50 -VDD VGS 40 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 30 Fig 10a. Switching Time Test Circuit 20 VDS 10 90% 0 25 50 75 100 TC , Case Temperature 125 150 ( °C) 10% VGS td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.02 0.01 0.1 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRL7NJ3802 1 5V D R IV E R L VDS D .U .T. RG + - VD D IA S 2V0GS V tp 0 .0 1 Ω Fig 12a. Unclamped Inductive Test Circuit A EAS , Single Pulse Avalanche Energy (mJ) 300 TOP 250 BOTTOM 200 150 100 50 0 25 V (B R )D SS ID 10A 14A 22A 50 75 100 125 150 Starting TJ , Junction Temperature ( ° C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 12V .2µF .3µF 4.5V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 D.U.T. IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRL7NJ3802 Footnotes: Repetitive Rating; Pulse width limited by Pulse width ≤ 300 µs; Duty Cycle ≤ 2% maximum junction temperature. VDD = 25 V, Starting TJ = 25°C, L=0.5mH Peak IAS = 22A, RG= 25Ω Case Outline and Dimensions — SMD-0.5 PAD ASSIGNMENTS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 08/03 www.irf.com 7