STK11C48 2K x 8 nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM Obsolete - Not Recommend for new Designs FEATURES DESCRIPTION • 25ns, 35ns and 45ns Access Times The Simtek STK11C48 is a fast static RAM with a nonvolatile element incorporated in each static memory cell. The SRAM can be read and written an unlimited number of times, while independent, nonvolatile data resides in the Nonvolatile Elements. Data transfers from the SRAM to the Nonvolatile Elements (the STORE operation), or from Nonvolatile Elements to SRAM (the RECALL operation), take place using a software sequence. Transfers from the Nonvolatile Elements to the SRAM (the RECALL operation) also take place automatically on restoration of power. • STORE to Nonvolatile Elements Initiated by Software • RECALL to SRAM Initiated by Software or Power Restore • 10mA Typical ICC at 200ns Cycle Time • Unlimited READ, WRITE and RECALL Cycles • 1,000,000 STORE Cycles to Nonvolatile Elements • 100-Year Data Retention in Nonvolatile Elements • Commercial and Industrial Temperatures • 28-Pin 300 mil PDIP, 300 mil SOIC and 350 mil SOIC Packages BLOCK DIAGRAM PIN CONFIGURATIONS A5 A6 A7 A8 A9 ROW DECODER Quantum Trap 32 x 512 STORE STATIC RAM ARRAY 32 x 512 RECALL STORE/ RECALL CONTROL DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 INPUT BUFFERS SOFTWARE DETECT 1 28 2 27 3 26 4 25 5 24 6 23 7 22 8 21 9 20 10 19 11 18 12 17 13 16 14 15 VCC W NC A8 A9 NC G A10 E DQ7 DQ6 DQ5 DQ4 DQ3 28 - 300 PDIP 28 - 300 SOIC 28 - 350 SOIC COLUMN I/O PIN NAMES COLUMN DEC A0 A1 A2 A3 A4 A10 G E W March 2006 A0 - A10 NC NC A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS 1 A0 - A10 Address Inputs W Write Enable DQ0 - DQ7 Data In/Out E Chip Enable G Output Enable VCC Power (+ 5V) VSS Ground Document Control # ML0003 rev 0.2 STK11C48 ABSOLUTE MAXIMUM RATINGSa Voltage on Input Relative to Ground . . . . . . . . . . . . . .–0.5V to 7.0V Voltage on Input Relative to VSS . . . . . . . . . . –0.6V to (VCC + 0.5V) Voltage on DQ0-7 . . . . . . . . . . . . . . . . . . . . . . –0.5V to (VCC + 0.5V) Temperature under Bias . . . . . . . . . . . . . . . . . . . . . –55°C to 125°C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W DC Output Current (1 output at a time, 1s duration) . . . . . . . . 15mA Note a: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. (VCC = 5.0V ± 10%) DC CHARACTERISTICS SYMBOL COMMERCIAL INDUSTRIAL MIN MIN PARAMETER UNITS MAX NOTES MAX ICC1b Average VCC Current 85 75 65 90 75 65 mA mA mA tAVAV = 25ns tAVAV = 35ns tAVAV = 45ns ICC2c Average VCC Current during STORE 3 3 mA All Inputs Don’t Care, VCC = max Average VCC Current at tAVAV = 200ns 5V, 25°C, Typical 10 10 mA W ≥ (V CC – 0.2V) All Others Cycling, CMOS Levels 25 21 18 26 22 19 mA mA mA tAVAV = 25ns, E ≥ VIH tAVAV = 35ns, E ≥ VIH tAVAV = 45ns, E ≥ VIH 750 750 μA E ≥ (V CC - 0.2V) All Others VIN ≤ 0.2V or ≥ (VCC – 0.2V) ICC3 b ISB1d Average VCC Current (Standby, Cycling TTL Input Levels) ISB2d VCC Standby Current (Standby, Stable CMOS Input Levels) IILK Input Leakage Current ±1 ±1 μA VCC = max VIN = VSS to VCC IOLK Off-State Output Leakage Current ±5 ±5 μA VCC = max VIN = VSS to VCC, E or G ≥ VIH VIH Input Logic “1” Voltage 2.2 VCC + .5 2.2 VCC + .5 V All Inputs VIL Input Logic “0” Voltage VSS – .5 0.8 VSS – .5 0.8 V All Inputs VOH Output Logic “1” Voltage V IOUT = – 4mA VOL Output Logic “0” Voltage 0.4 V IOUT = 8mA TA Operating Temperature 85 °C 2.4 2.4 0.4 0 70 –40 Note b: ICC1 and ICC3 are dependent on output loading and cycle rate. The specified values are obtained with outputs unloaded. Note c: ICC2 is the average current required for the duration of the STORE cycle (tSTORE ) . Note d: E ≥ VIH will not produce standby current levels until any nonvolatile cycle in progress has timed out. AC TEST CONDITIONS Input Pulse Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to 3V Input Rise and Fall Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ≤ 5ns Input and Output Timing Reference Levels . . . . . . . . . . . . . . . 1.5V Output Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Figure 1 CAPACITANCEe 5.0V 480 Ohms (TA = 25°C, f = 1.0MHz) OUTPUT SYMBOL PARAMETER MAX UNITS CONDITIONS CIN Input Capacitance 8 pF ΔV = 0 to 3V COUT Output Capacitance 7 pF ΔV = 0 to 3V 255 Ohms 30 pF INCLUDING SCOPE AND FIXTURE Note e: These parameters are guaranteed but not tested. Figure 1: AC Output Loading March 2006 2Document Control # ML0003 rev 0.2 STK11C48 SRAM READ CYCLES #1 & #2 (VCC = 5.0V + 10%) SYMBOLS NO. STK11C48-25 STK11C48-35 STK11C48-45 PARAMETER #1, #2 1 tELQV 2 tAVAV f 3 tAVQVg 4 tGLQV UNITS Alt. MIN MAX MIN MAX Chip Enable Access Time tRC Read Cycle Time tAA Address Access Time 25 35 45 ns tOE Output Enable to Data Valid 10 15 20 ns 5 tAXQXg tOH Output Hold after Address Change 5 5 5 ns 6 tELQX tLZ Chip Enable to Output Active 5 5 5 ns 7 tEHQZh tHZ Chip Disable to Output Inactive 8 tGLQX tOLZ Output Enable to Output Active 9 tGHQZh tOHZ Output Disable to Output Inactive tPA Chip Enable to Power Active tPS Chip Disable to Power Standby 10 tELICCH 11 tEHICCLd, e 25 35 MAX tACS e 25 MIN 45 35 45 10 0 13 0 ns 15 0 0 10 13 0 35 ns ns 15 0 25 ns ns ns 45 ns Note f: W must be high during SRAM READ cycles and low during SRAM WRITE cycles. Note g: I/O state assumes E, G < VIL and W > VIH; device is continuously selected. Note h: Measured ± 200mV from steady state output voltage. SRAM READ CYCLE #1: Address Controlledf, g 2 tAVAV ADDRESS 3 tAVQV 5 tAXQX DQ (DATA OUT) DATA VALID SRAM READ CYCLE #2: E Controlledf 2 tAVAV ADDRESS 1 11 tELQV tEHICCL 6 tELQX E 7 tEHQZ G 9 tGHQZ 4 8 tGLQV tGLQX DQ (DATA OUT) DATA VALID 10 tELICCH ICC March 2006 ACTIVE STANDBY 3Document Control # ML0003 rev 0.2 STK11C48 SRAM WRITE CYCLES #1 & #2 (VCC = 5.0V + 10%) SYMBOLS STK11C48-25 NO. STK11C48-35 STK11C48-45 PARAMETER UNITS #1 #2 Alt. 12 tAVAV tAVAV tWC Write Cycle Time 25 35 45 ns 13 tWLWH tWLEH tWP Write Pulse Width 20 25 30 ns 14 tELWH tELEH tCW Chip Enable to End of Write 20 25 30 ns 15 tDVWH tDVEH tDW Data Set-up to End of Write 10 12 15 ns 16 tWHDX tEHDX tDH Data Hold after End of Write 0 0 0 ns 17 tAVWH tAVEH tAW Address Set-up to End of Write 20 25 30 ns 18 tAVWL tAVEL tAS Address Set-up to Start of Write 0 0 0 ns 19 tWHAX tEHAX tWR Address Hold after End of Write 0 0 0 ns 20 tWLQZh, i tWZ Write Enable to Output Disable 21 tWHQX tOW Output Active after End of Write Note i: Note j: MIN MAX MIN MAX 10 5 MIN 13 5 MAX 15 5 ns ns If W is low when E goes low, the outputs remain in the high-impedance state. E or W must be ≥ VIH during address transitions. SRAM WRITE CYCLE #1: W Controlledj 12 tAVAV ADDRESS 19 tWHAX 14 tELWH E 17 tAVWH 18 tAVWL 13 tWLWH W 15 tDVWH DATA IN DATA OUT 16 tWHDX DATA VALID 20 tWLQZ HIGH IMPEDANCE PREVIOUS DATA 21 tWHQX SRAM WRITE CYCLE #2: E Controlledj 12 tAVAV ADDRESS 14 tELEH 18 tAVEL 19 tEHAX E 17 tAVEH 13 tWLEH W 15 tDVEH DATA IN DATA OUT March 2006 16 tEHDX DATA VALID HIGH IMPEDANCE 4Document Control # ML0003 rev 0.2 STK11C48 STORE INHIBIT/POWER-UP RECALL (VCC = 5.0V + 10%) SYMBOLS STK11C48 NO. PARAMETER UNITS NOTES Standard MIN 22 tRESTORE Power-up RECALL Duration 23 tSTORE STORE Cycle Duration 24 VSWITCH Low Voltage Trigger Level 25 VRESET Low Voltage Reset Level 4.0 MAX 550 μs 10 ms 4.5 V 3.6 V k Note k: tRESTORE starts from the time VCC rises above VSWITCH. STORE INHIBIT/POWER-UP RECALL VCC 5V 24 VSWITCH 25 VRESET STORE INHIBIT POWER-UP RECALL 22 tRESTORE DQ (DATA OUT) POWER-UP RECALL March 2006 BROWN OUT STORE INHIBIT BROWN OUT STORE INHIBIT BROWN OUT STORE INHIBIT NO RECALL (VCC DID NOT GO BELOW VRESET) NO RECALL (VCC DID NOT GO BELOW VRESET) RECALL WHEN VCC RETURNS ABOVE VSWITCH 5Document Control # ML0003 rev 0.2 STK11C48 SOFTWARE STORE/RECALL MODE SELECTION E L L Note l: W A10 - A0 (hex) MODE I/O NOTES H 000 555 2AA 7FF 0F0 70F Read SRAM Read SRAM Read SRAM Read SRAM Read SRAM Nonvolatile STORE Output Data Output Data Output Data Output Data Output Data Output High Z l H 000 555 2AA 7FF 0F0 70E Read SRAM Read SRAM Read SRAM Read SRAM Read SRAM Nonvolatile RECALL Output Data Output Data Output Data Output Data Output Data Output High Z l The six consecutive addresses must be in the order listed. W must be high during all six consecutive cycles to enable a nonvolatile cycle. SOFTWARE STORE/RECALL CYCLEm, n NO. 26 SYMBOLS tAVAV m (VCC = 5.0V ± 10%)b STK11C48-25 STK11C48-35 STK11C48-45 MIN MIN MIN PARAMETER UNITS MAX MAX MAX STORE/RECALL Initiation Cycle Time 25 35 45 ns 27 tAVEL Address Set-up Time 0 0 0 ns 28 tELEHm Clock Pulse Width 20 25 30 ns 29 tELAXm Address Hold Time 20 20 20 ns 30 tRECALLm RECALL Duration 20 20 20 μs Note m: The software sequence is clocked with E controlled reads. Note n: The six consecutive addresses must be in the order listed in the Software STORE/RECALL Mode Selection Table: (000, 555, 2AA, 7FF, 0F0, 70F) for a STORE cycle or (000, 555, 2AA, 7FF, 0F0, 70E) for a RECALL cycle. W must be high during all six consecutive cycles. SOFTWARE STORE/RECALL CYCLE: E Controlledn 26 26 tAVAV ADDRESS tAVAV ADDRESS #1 27 tAVEL ADDRESS #6 28 tELEH E 29 tELAX 23 tSTORE DQ (DATA OUT) March 2006 DATA VALID DATA VALID 30 / tRECALL HIGH IMPEDANCE 6Document Control # ML0003 rev 0.2 STK11C48 DEVICE OPERATION The STK11C48 is a versatile memory chip that provides several modes of operation. The STK11C48 can operate as a standard 8K x 8 SRAM. It has an 8K x 8 Nonvolatile Elements shadow to which the SRAM information can be copied or from which the SRAM can be updated in nonvolatile mode. NOISE CONSIDERATIONS Note that the STK11C48 is a high-speed memory and so must have a high-frequency bypass capacitor of approximately 0.1μF connected between Vcc and Vss, using leads and traces that are as short as possible. As with all high-speed CMOS ICs, normal careful routing of power, ground and signals will help prevent noise problems. SRAM READ The STK11C48 performs a READ cycle whenever E and G are low and W is high. The address specified on pins A0-10 determines which of the 2,048 data bytes will be accessed. When the READ is initiated by an address transition, the outputs will be valid after a delay of tAVQV (READ cycle #1). If the READ is initiated by E or G, the outputs will be valid at tELQV or at tGLQV, whichever is later (READ cycle #2). The data outputs will repeatedly respond to address changes within the tAVQV access time without the need for transitions on any control input pins, and will remain valid until another address change or until E or G is brought high. SRAM WRITE A WRITE cycle is performed whenever E and W are low. The address inputs must be stable prior to entering the WRITE cycle and must remain stable until either E or W goes high at the end of the cycle. The data on the common I/O pins DQ0-7 will be written into the memory if it is valid tDVWH before the end of a W controlled WRITE or tDVEH before the end of an E controlled WRITE. It is recommended that G be kept high during the entire WRITE cycle to avoid data bus contention on the common I/O lines. If G is left low, internal circuitry will turn off the output buffers tWLQZ after W goes low. March 2006 SOFTWARE NONVOLATILE STORE The STK11C48 software STORE cycle is initiated by executing sequential READ cycles from six specific address locations. During the STORE cycle an erase of the previous nonvolatile data is first performed, followed by a program of the nonvolatile elements. The program operation copies the SRAM data into nonvolatile memory. Once a STORE cycle is initiated, further input and output are disabled until the cycle is completed. Because a sequence of READs from specific addresses is used for STORE initiation, it is important that no other READ or WRITE accesses intervene in the sequence or the sequence will be aborted and no STORE or RECALL will take place. To initiate the software STORE cycle, the following READ sequence must be performed: 1. 2. 3. 4. 5. 6. Read address Read address Read address Read address Read address Read address 000 (hex) 555 (hex) 2AA (hex) 7FF (hex) 0F0 (hex) 70F (hex) Valid READ Valid READ Valid READ Valid READ Valid READ Initiate STORE cycle The software sequence must be clocked with E controlled READs. Once the sixth address in the sequence has been entered, the STORE cycle will commence and the chip will be disabled. It is important that READ cycles and not WRITE cycles be used in the sequence, although it is not necessary that G be low for the sequence to be valid. After the tSTORE cycle time has been fulfilled, the SRAM will again be activated for READ and WRITE operation. SOFTWARE NONVOLATILE RECALL A software RECALL cycle is initiated with a sequence of READ operations in a manner similar to the software STORE initiation. To initiate the RECALL cycle, the following sequence of READ operations must be performed: 1. 2. 3. 4. 5. 6. Read address Read address Read address Read address Read address Read address 000 (hex) 555 (hex) 2AA (hex) 7FF (hex) 0F0 (hex) 70E (hex) Valid READ Valid READ Valid READ Valid READ Valid READ Initiate RECALL cycle 7Document Control # ML0003 rev 0.2 STK11C48 Internally, RECALL is a two-step procedure. First, the SRAM data is cleared, and second, the nonvolatile information is transferred into the SRAM cells. After the tRECALL cycle time the SRAM will once again be ready for READ and WRITE operations. The RECALL operation in no way alters the data in the Nonvolatile Element cells. The nonvolatile data can be recalled an unlimited number of times. POWER-UP RECALL During power up, or after any low-power condition (VCC < VRESET), an internal RECALL request will be latched. When VCC once again exceeds the sense voltage of VSWITCH, a RECALL cycle will automatically be initiated and will take tRESTORE to complete. If the STK11C48 is in a WRITE state at the end of power-up RECALL, the SRAM data will be corrupted. To help avoid this situation, a 10K Ohm resistor should be connected either between W and system VCC or between E and system VCC. HARDWARE PROTECT The STK11C48 offers hardware protection against inadvertent STORE operation during low-voltage conditions. When VCC < VSWITCH, all software STORE operations are inhibited. LOW AVERAGE ACTIVE POWER The STK11C48 draws significantly less current when it is cycled at times longer than 50ns. Figure 2 shows the relationship between ICC and READ cycle time. Worst-case current consumption is shown for both CMOS and TTL input levels (commercial temperature range, VCC = 5.5V, 100% duty cycle on chip enable). Figure 3 shows the same relationship for WRITE cycles. If the chip enable duty cycle is less than 100%, only standby current is drawn when the chip is disabled. The overall average current drawn by the STK11C48 depends on the following items: 1) CMOS vs. TTL input levels; 2) the duty cycle of chip enable; 3) the overall cycle rate for accesses; 4) the ratio of READs to WRITEs; 5) the operating temperature; 6) the Vcc level; and 7) I/ O loading. 100 Average Active Current (mA) Average Active Current (mA) 100 80 60 40 TTL 20 80 60 TTL 40 CMOS 20 CMOS 0 0 50 100 150 Cycle Time (ns) 200 Figure 2: ICC (max) Reads March 2006 50 100 150 Cycle Time (ns) 200 Figure 3: ICC (max) Writes 8Document Control # ML0003 rev 0.2 STK11C48 ORDERING INFORMATION STK11C48 - P F 45 I Temperature Range Blank = Commercial (0 to 70°C) I = Industrial (–40 to 85°C) Access Time 25 = 25ns 35 = 35ns 45 = 45ns Lead Finish Blank = 85%Sn/15%Pb F = 100% Sn (Matte Tin) Package P = Plastic 28-pin 300 mil DIP N = Plastic 28-pin 300 mil SOIC S = Plastic 28-pin 350 mil SOIC March 2006 9Document Control # ML0003 rev 0.2 STK11C48 Document Revision History Revision Date Summary 0.0 October 2002 Removed 20 nsec device. 0.1 September 2003 Added lead-free lead finish 0.2 March 2006 Marked as Obsolete, Not recommended for new design. March 2006 10Document Control # ML0003 rev 0.2