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by MRF5S21130/D
SEMICONDUCTOR TECHNICAL DATA
N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicaThe RF MOSFET Line
t i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2–carrier W–CDMA Performance for VDD = 28 Volts,
IDQ = 1200 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth =
3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 –5 MHz
and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW
@ f1 –10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability
on CCDF.
Output Power — 28 Watts Avg.
Power Gain — 13.5 dB
Efficiency — 26%
IM3 — –37 dBc
ACPR — –39 dBc
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 92 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Qualified Up to a Maximum of 32 VDD Operation
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
2170 MHz, 28 W AVG.,
2 x W–CDMA, 28 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465B–03, STYLE 1
NI–880
MRF5S21130
CASE 465C–02, STYLE 1
NI–880S
MRF5S21130S
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Gate–Source Voltage
VGS
–0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
315
2
Watts
W/°C
Storage Temperature Range
Tstg
–65 to +150
°C
Operating Junction Temperature
TJ
200
°C
CW
92
Watts
CW Operation
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 0
MOTOROLA
RF DEVICE DATA
Motorola,
Inc. 2002
MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3
1
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Case
Case Temperature 80°C, 92 W CW
Case Temperature 80°C, 28 W CW
Max
Unit
°C/W
RθJC
0.56
0.56
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
µAdc
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 µAdc)
VGS(th)
2.5
2.7
3.5
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1200 mAdc)
VGS(Q)
—
3.7
—
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 3 Adc)
VDS(on)
—
0.26
0.3
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
gfs
—
7.5
—
S
Crss
—
2.6
—
pF
Characteristic
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2–carrier W–CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and
IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Common–Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 28 W Avg., IDQ = 1200 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
Gps
12
13.5
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 28 W Avg., IDQ = 1200 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
η
24
26
—
%
Third Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 28 W Avg., IDQ = 1200 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3
measured over 3.84 MHz BW at f1 –10 MHz and f2 +10 MHz
referenced to carrier channel power.)
IM3
–37
–35
dBc
Adjacent Channel Power Ratio
(VDD = 28 Vdc, Pout = 28 W Avg., IDQ = 1200 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR
measured over 3.84 MHz at f1 –5 MHz and f2 +5 MHz.)
ACPR
—
–39
–37
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 28 W Avg., IDQ = 1200 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
IRL
—
–12
–9
dB
(1) Part is internally matched both on input and output.
MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3
2
MOTOROLA RF DEVICE DATA
Z1
Z2
Z3
Z4
Z5
Z6, Z7
Z8
0.500″ x 0.083″ Microstrip
0.995″ x 0.083″ Microstrip
0.905″ x 0.083″ Microstrip
0.159″ x 1.024″ Microstrip
0.117″ x 1.024″ Microstrip
0.749″ x 0.083″ Microstrip
0.117″ x 1.000″ Microstrip
Z9, Z10
Z11
Z12
Z13
Z14, Z15
Z16
PCB
0.709″ x 0.083″ Microstrip
0.415″ x 1.000″ Microstrip
0.531″ x 0.083″ Microstrip
0.994″ x 0.083″ Microstrip
0.070″ x 0.220″ Microstrip
0.430″ x 0.083″ Microstrip
Taconic TLX8, 0.76 mm, εr = 2.55
Figure 1. MRF5S21130 Test Circuit Schematic
Table 1. MRF5S21130 Test Circuit Component Designations and Values
Part
Description
Value, P/N or DWG
Manufacturer
C1, C2, C13, C14, C15, C16
10 µF, 35 V Tantalum Capacitors
293D1106X9035D
Vishay–Sprague
C3, C4, C11, C12
220 nF Chip Capacitors (1812)
1812Y224KXA
Vishay–Vitramon
C5, C6, C7, C9, C10, C18, C19
6.8 pF 100B Chip Capacitors
100B6R8CW
ATC
C8
0.1 pF 100B Chip Capacitor
100B0R1BW
ATC
C17
0.5 pF 100B Chip Capacitor
100B0R5BW
ATC
C20
220 µF, 63 V Electrolytic Capacitor, Radial
13668221
Philips
R1, R2
1 kW, 1/4 W Chip Resistors
MOTOROLA RF DEVICE DATA
MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3
3
CUT OUT AREA
MRF5S21130
Rev 0
Figure 2. MRF5S21130 Test Circuit Component Layout
MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3
4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
5 /1% 67 5 2 *"89:-% ( 5 ;"
3<<=< 23#"% #+, <<=< 41>9%
: #+, ?>>= 0>/@/7?% =AB"89: 5 : /0
C :D <67 *
-
3
3
#
3
"
3
3
3
3
3
3
3
% .'. 44.*/0-
η
#.*/01-% ".*/01-
! %..2'.!".*/0-
η%."
'
').*D-
!
$% '(') *#+,-
Figure 3. 2–Carrier W–CDMA Broadband Performance
3
:
;"
;"
:
;"
! %..2'.!".*/0-
#%.+.'
'# ".4.*/01-
( 5 ;"
;"
:
5 /1
$ 5 #+,% $ 5 #+,
@636>= #=<=;=>7% #+, 6>= 41>9
:
3
3
( 5 ;"
3
;"
;"
3
3
;"
3
;"
3
3
Figure 4. Two–Tone Power Gain versus
Output Power
Figure 5. Third Order Intermodulation Distortion
versus Output Power
3
</ </=<
3
67 %..2'.*/0;-
#% '# ".4.*/01-
67% 2' *2"4- '
67% 2' *2"4- '
3
3
7? </=<
3
7? </=<
3
3
3
5 /1
$ 5 #+,%
$ 5 #+,
@636>= #=<=;=>7%
#+, 6>= 41>9
5 /1% 67 5 2 *'-% ( 5 ;"
@636>= #=<=;=>7% =>7=< <=E=>1 5 #+,
:
/=
/0 5 : /0; *: 2-
/0 5 : /0; * 2-
"17
5 /1% ( 5 ;"
=/ 2% µ=1*6>-% ;=1*6$$=>7=< <=E=>1 5 #+,
23' 4"! *#+,-
>% 2' */0;-
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
MOTOROLA RF DEVICE DATA
MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3
5
5 /1% ( 5 ;"% $ 5 #+,%
$ 5 #+,% G 23#"% #+, C
: #+, 0>/@/7?% =AB"89: 5 : /0
C :D <67 *
-
3
#
"
3
3
!
3
3
3
3
3
3
3
3
3
3" C
" C
: #+, 02 : #+, 02
3# C
: #+, 02
3
3
3
3
3
: #+,
?>>= 02
3
*/0-
3
3
η
#.*/01-% ".*/01-
η%.".'
').*D-%. ! %.2'.!".*/0-
3
3
Figure 9. 2-Carrier W-CDMA Spectrum
Figure 8. 2–Carrier W–CDMA ACPR, IM3, Power
Gain and Drain Efficiency versus Output Power
#0
.
".*+4.G."#4...-
0"0 ).*D-
3
$% '(') *#+,-
67% 2' *2"4- "!: *23#"-
:
:
:
:
3
# C
: #+, 02
'"F33"'"!' */0-
Figure 10. CCDF W–CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single Carrier Test Signal
H% H '#'"' *°? 68= 9<? / 117=/ #0
> ?6< G ;=<=
/<> 1<<=>7: $= 7=7 7 ==87=/ 7=;=<7<= ?8= 16<<=7=/ 76
=77=< 7?> ±D 6$ 7?= 7?=6<=71 <=/176> $6< ;=7 $<=: 8/=
#0
$176< $6< #0
> <71< 176>:
Figure 11. MTBF Factor versus Junction Temperature
MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3
6
MOTOROLA RF DEVICE DATA
$ 5 #+,
$ 5 #+,
6/I
6 5 Ω
$ 5 #+,
$ 5 #+,
6<1=
5 /1% ( 5 ;"% 67 5 2 "89:
f
MHz
Zsource
Ω
Zload
Ω
2080
2.87 – j9.49
1.51 – j2.97
2110
3.13 – j9.86
1.52 – j2.54
2140
4.05 – j10.90
1.59 – j2.68
2170
4.80 – j11.75
1.62 – j2.70
2200
5.55 – j11.87
1.54 – j3.13
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
77
#71?>9
=7@6<A
=81=
>/=<
=7
>7
#71?>9
=7@6<A
Z
source
Z
load
Figure 12. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3
7
NOTES
MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3
8
MOTOROLA RF DEVICE DATA
NOTES
MOTOROLA RF DEVICE DATA
MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3
9
NOTES
MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3
10
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
B
G
2X
1
Q
#
"
0
#
'4J
: #'4! " '"! ' "4
):#3:
: ! #'4J +:
: #'4 + 4 #'"4' : *:- "2")
# "F"!' 0):
: ' ''
#
B
(FLANGE)
3
K
2
#
D
"
0
#
M
(INSULATOR)
#
#
"
#
0
#
111
#
"
#
0
#
N
R
111
#
"
#
0
S
(LID)
#
"
#
0
(LID)
#
(INSULATOR)
#
H
C
E
T
A
SEATING
PLANE
B
'4J
: #'4! " '"! ' "4
):#3:
: ! #'4J +:
: #'4 + 4 #'"4' : *:- "2")
# "F"!' 0):
1
B
(FLANGE)
2
#
#
D
"
"
#
#
0
#
M
(INSULATOR)
0
#
"
#
0
R
111
#
N
111
MILLIMETERS
MIN
MAX
:
:
:
:
:
:
:
:
:
:
:
:
:.04
:
:
:
:
:
:
:
:
:
:
:
:
:
:
:.'
:.'
:.'
CASE 465B–03
ISSUE B
NI–880
MRF5S21130
(FLANGE)
K
INCHES
MIN
MAX
:
:
:
:
:
:
:
:
:
:
:
:
:.04
:
:
:
:
:
:
:
:
:
:
:
:
:
:
:.'
:.'
:.'
4) ' J
: "
: !"'
: 4'
F
A
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
#
"
#
S
(LID)
#
0
#
"
#
0
(LID)
#
(INSULATOR)
#
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
:
:
:
:
:
:
:
:
:
:
:
:
:
:
:
:
:
:
:
:
:
:
:
:
:.'
:.'
:.'
MILLIMETERS
MIN
MAX
:
:
:
:
:
:
:
:
:
:
:
:
:
:
:
:
:
:
:
:
:
:
:
:
:.'
:.'
:.'
4) ' J
: "
: !"'
: 4'
H
C
F
E
T
A
A
(FLANGE)
MOTOROLA RF DEVICE DATA
SEATING
PLANE
CASE 465C–02
ISSUE A
NI–880S
MRF5S21130S
MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3
11
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation, or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other
application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola
products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and
distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal
injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture
of the part. Motorola and the Stylized M Logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their
respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
E Motorola, Inc. 2002.
How to reach us:
USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447
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Technical Information Center: 1–800–521–6274
HOME PAGE: http://www.motorola.com/semiconductors/
MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3
◊
12
MOTOROLA RF DEVICE DATA
MRF5S21130/D