FAIRCHILD TN6715A

TN6715A
NZT6715
C
E
C
C
B
TO-226
B
SOT-223
E
NPN General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 1.2 A.
Sourced from Process 38.
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
V
VCEO
Collector-Emitter Voltage
40
VCBO
Collector-Base Voltage
50
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current - Continuous
TJ, Tstg
Operating and Storage Junction Temperature Range
1.5
A
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD
TA = 25°C unless otherwise noted
Characteristic
RθJC
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
Max
TN6715A
1.0
8.0
50
*NZT6715
1.0
8.0
125
125
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
 1997 Fairchild Semiconductor Corporation
Units
W
mW/°C
°C/W
°C/W
TN6715A / NZT6715
Discrete POWER & Signal
Technologies
(continued)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
I C = 10 mA, IB = 0
40
V
V(BR)CBO
Collector-Base Breakdown Voltage
I C = 100 µA, I E = 0
50
V
V(BR)EBO
Emitter-Base Breakdown Voltage
I E = 100 µA, IC = 0
5.0
V
ICBO
Collector-Cutoff Current
VCB = 50 V, IE = 0
0.1
µA
IEBO
Emitter-Cutoff Current
VEB = 5.0 V, IC = 0
0.1
µA
250
0.5
V
1.2
V
ON CHARACTERISTICS
hFE
DC Current Gain
VCE( sat)
Collector-Emitter Saturation Voltage
IC = 10 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
IC = 1.0 A, VCE = 1.0 V
IC = 1.0 A, IB = 100 mA
VBE( on)
Base-Emitter On Voltage
IC = 1.0 A, VCE = 1.0 V
55
60
50
SMALL SIGNAL CHARACTERISTICS
hfe
Small-Signal Current Gain
Ccb
Collector-Base Capacitance
I C = 50 mA, VCE = 10 V,
f = 20 MHz
VCB = 10 V, IE = 0, f = 1.0 MHz
2.5
20
30
pF
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%
Typical Pulsed Current Gain
vs Collector Current
500
400
V CE = 5V
125 °C
300
25 °C
200
- 40 ºC
100
0
0.001
0.01
0.1
I C - COLLECTOR CURRENT (A)
1
2
VCESAT- COLLECTOR-EMITTER VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
0.6
β = 10
0.5
0.4
125 ºC
0.3
25°C
0.2
- 40 ºC
0.1
0
0.01
0.1
1
I C - COLLECTOR CURRENT (A)
P 38
3
TN6715A / NZT6715
NPN General Purpose Amplifier
(continued)
(continued)
VBE(ON)- BASE-EMITTER ON VOLTAGE (V)
Base-Emitter ON Voltage vs
Collector Current
1
0.8
- 40 ºC
25°C
0.6
125 º C
0.4
VCE = 5V
0.2
0.001
I
0.01
0.1
C - COLLECTOR CURRENT (A)
1
VBE(ON)- BASE-EMITTER ON VOLTAGE (V)
Typical Characteristics
Base-Emitter ON Voltage vs
Collector Current
1
0.8
- 40 ºC
25°C
0.6
125 º C
0.4
VCE = 5V
0.2
0.001
0.01
0.1
I C - COLLECTOR CURRENT (A)
P 38
I CBO- COLLECTOR CURRENT (nA)
100
VCB = 40V
10
1
0.1
150
40
30
20
10
0
0
V CE = 10V
400
300
200
100
10
100
I C - COLLECTOR CURRENT (mA)
8
12
16
20
24
28
Pr 38
1000
DC
1
T
DC
*PULSED
OPERATION
T A = 25 °C
0.1
100
µS*
10
µS
*
CO
1.0
LLE
CT
m
OR
s*
LE
AM
AD
BIE
=2
NT
5 °C
=
T
25
°C
LIMIT DETERMINED
BY BV CEO
0.01
1
4
V CB - COLLECTOR-BASE VOLTAGE (V)
10
500
0
Collector-Base Capacitance
vs Collector-Base Voltage
Safe Operating Area TO-226
Gain Bandwidth Product
vs Collector Current
I C - COLLECTOR CURRENT (A)
h FE - GAIN BANDWIDTH PRODUCT (MHz)
50
75
100
125
T A - AMBIENT TEMPERATURE (ºC)
C OBO - COLLECTOR-BASE CAPACITANCE (pF)
Pr38
Collector-Cutoff Current
vs Ambient Temperature
25
1
1
10
V CE - COLLECTOR-EMITTER VOLTAGE (V)
Pr38
100
TN6715A / NZT6715
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Power Dissipation vs
Ambient Temperature
PD - POWER DISSIPATION (W)
1
0.75
TO-226
SOT-223
0.5
0.25
0
0
25
50
75
100
TEMPERATURE (o C)
125
150
TN6715A / NZT6715
NPN General Purpose Amplifier