FMB2907A FFB2907A E2 MMPQ2907A C2 B2 E1 C1 C1 E1 C2 B2 E3 E4 B4 B2 B1 pin #1 B1 E2 B3 E2 E1 pin #1 B1 SC70-6 SuperSOT-6 Mark: .2F Mark: .2F C1 SOIC-16 C2 C1 C3 C2 C4 C4 C3 PNP Multi-Chip General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 60 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 600 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die 1998 Fairchild Semiconductor Corporation Max FFB2907A 300 2.4 415 FMB2907A 700 5.6 180 Units MMPQ2907A 1,000 8.0 125 240 mW mW/°C °C/W °C/W °C/W FFB2907A / FMBT2907A / MMPQ2907A Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS V(BR)CEO IC = 10 mA, IB = 0 V(BR)CBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage 60 V V(BR)EBO Emitter-Base Breakdown Voltage IC = 10 µA, IE = 0 60 V IE = 10 µA, IC = 0 5.0 IB Base Cutoff Current VCB = 30 V, VEB = 0.5 V ICEX Collector Cutoff Current VCE = 30 V, VBE = 0.5 V ICBO Collector Cutoff Current VCB = 50 V, IE = 0 VCB = 50 V, IE = 0, TA = 125°C V 50 nA 50 nA 0.02 20 µA µA ON CHARACTERISTICS hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage* VBE(sat) Base-Emitter Saturation Voltage IC = 0.1 mA, VCE = 10 V IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V* IC = 500 mA, VCE = 10 V* IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA* IC = 500 mA, IB = 50 mA 75 100 100 100 50 300 0.4 1.6 1.3 2.6 V V V V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Cobo Output Capacitance Cibo Input Capacitance IC = 50 mA, VCE = 20 V, f = 100 MHz VCB = 10 V, IE = 0, f = 100 kHz VEB = 2.0 V, IC = 0, f = 100 kHz 250 MHz 6.0 pF 12 pF SWITCHING CHARACTERISTICS ton Turn-on Time VCC = 30 V, IC = 150 mA, 30 ns td Delay Time IB1 = 15 mA 8.0 ns tr Rise Time 20 ns toff Turn-off Time VCC = 6.0 V, IC = 150 mA 80 ns ts Storage Time IB1 = IB2 = 15 mA 60 ns tf Fall Time 20 ns *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FFB2907A / FMBT2907A / MMPQ2907A PNP Multi-Chip General Purpose Amplifier (continued) 500 VCE = 5V 400 125 °C 300 200 100 0 0.1 25 °C - 40 °C 0.3 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 Base-Emitter Saturation Voltage vs Collector Current 1 0.8 - 40 ºC 25 °C 0.6 125 ºC 0.4 β = 10 0.2 0 1 10 100 I C - COLLECTOR CURRENT (mA) 500 VCESAT - COLLECTOR EMITTER VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current Collector-Emitter Saturation Voltage vs Collector Current 0.5 β = 10 0.4 0.3 25 °C 0.2 125 ºC 0.1 0 VBEON - BASE EMITTER ON VOLTAGE (V) VBESAT - BASE EMITTER VOLTAGE (V) hFE - TYPICAL PULSED CURRENT GAIN Typical Characteristics - 40 ºC 1 500 Base Emitter ON Voltage vs Collector Current 1 0.8 - 40 ºC 25 °C 0.6 125 ºC 0.4 VCE = 5V 0.2 0 0.1 1 10 I C - COLLECTOR CURRENT (mA) 25 Input and Output Capacitance vs Reverse Bias Voltage Collector-Cutoff Current vs. Ambient Temperature 100 20 V CB = 35V CAPACITANCE (pF) ICBO- COLLECTOR CURRENT (nA) 10 100 I C - COLLECTOR CURRENT (mA) 10 1 0.1 0.01 25 50 75 100 TA - AMBIENT TEMPERATURE ( º C) 125 16 12 C ib 8 4 0 0.1 C ob 1 10 REVERSE BIAS VOLTAGE (V) 50 FFB2907A / FMBT2907A / MMPQ2907A PNP Multi-Chip General Purpose Amplifier (continued) Typical Characteristics (continued) Switching Times vs Collector Current 250 I B1 = I B2 = 200 Turn On and Turn Off Times vs Collector Current 500 Ic I B1 = I B2 = 10 400 V cc = 15 V TIME (nS) TIME (nS) V cc = 15 V ts 150 100 tr tf 50 300 200 t off 100 td 0 10 100 I C - COLLECTOR CURRENT (mA) t on 0 10 1000 100 I C - COLLECTOR CURRENT (mA) Rise Time vs Collector and Turn On Base Currents 1000 Power Dissipation vs Ambient Temperature 50 1 PD - POWER DISSIPATION (W) I B1 - TURN 0N BASE CURRENT (mA) Ic 10 20 10 t r = 15 V 5 30 ns 2 60 ns 1 10 100 I C - COLLECTOR CURRENT (mA) 500 SOT-6 0.75 0.5 0.25 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 FFB2907A / FMBT2907A / MMPQ2907A PNP Multi-Chip General Purpose Amplifier (continued) Test Circuits 30 V 200 Ω Ω 1.0 KΩ 0 - 16 V 50 Ω ≤ 200ns FIGURE 1: Saturated Turn-On Switching Time Test Circuit - 6.0 V 15 V 1 KΩ Ω 37 Ω Ω 1.0 KΩ 0 - 30 V 50 Ω ≤ 200ns FIGURE 2: Saturated Turn-Off Switching Time Test Circuit FFB2907A / FMBT2907A / MMPQ2907A PNP Multi-Chip General Purpose Amplifier