Inchange Semiconductor Product Specification 2N6229 2N6230 2N6231 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・For high power audio; disk head positioners and other linear applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol 体 导 电半 Absolute maximum ratings(Ta=℃) 固 SYMBOL VCBO VCEO PARAMETER CONDITIONS N O C I 2N6229 Collector-base voltage 2N6230 G N A H INC Collector-emitter voltage 2N6231 SEM Open emitter 2N6229 2N6230 Emitter-base voltage UNIT -100 -120 V -140 -100 Open base 2N6231 VEBO R O T DUC VALUE -120 V -140 Open collector -7 V -10 A 150 W IC Collector current PD Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 0.875 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N6229 2N6230 2N6231 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6229 VCEO(SUS) Collector-emitter sustaining voltage 2N6230 TYP. MAX UNIT -100 IC=-0.2A ;IB=0 V -120 -140 2N6231 VCEsat MIN Collector-emitter saturation voltage IC=-4A; IB=-0.4A -1.0 V VBE Base-emitter on voltage IC=-5A ; VCE=-2V -2.0 V ICEO Collector cut-off current VCE=Rated VCEO; IB=0 -5.0 mA ICBO Collector cut-off current VCB=Rated VCBO; IE=0 -1.0 mA IEBO Emitter cut-off current VEB=-7V; IC=0 hFE fT 体 导 电半 固 D N O C I M E 2N6229 S G N HA DC current gain INC Transition frequency 2N6230 R O T UC IC=-5A ; VCE=-2V 2N6231 IC=-0.5A ; VCE=-4V 2 -0.1 25 100 20 80 15 60 1 mA MHz Inchange Semiconductor Product Specification 2N6229 2N6230 2N6231 Silicon PNP Power Transistors PACKAGE OUTLINE 体 导 电半 固 N O C EMI S G N HA INC R O T DUC Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3