Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5621 2N5623 2N5625 2N5627 DESCRIPTION ・With TO-3 package ・Excellent safe operating area ・Low collector saturation voltage APPLICATIONS ・For audio and general-purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol 导体 半 电 R O T UC Absolute maximum ratings(Ta=℃) 固 SYMBOL VCBO VCEO PARAMETER CONDITIONS D N O IC 2N5621 Collector-base voltage M E S E 2N5623/5625 ANG INCH Collector-emitter voltage Open emitter -100 -120 2N5621 -60 2N5623/5625 Open base Emitter-base voltage UNIT -80 2N5627 2N5627 VEBO VALUE -80 V V -100 Open collector -5 V -10 A 100 W IC Collector current PD Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.5 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5621 2N5623 2N5625 2N5627 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N5621 VCEO(SUS) Collector-emitter sustaining voltage 2N5623/5625 TYP. MAX UNIT -60 IC=-50mA ;IB=0 V -80 -100 2N5627 VCEsat MIN Collector-emitter saturation voltage IC=-10A; IB=-1A -1.5 V VBE Base-emitter on voltage IC=-5A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=Rated VCBO; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA 导体 半 电 2N5621/5625 hFE DC current gain 固 70 D N O IC 30 M E S GE 2N5621/5625 fT Transition frequency N A H INC R O T UC IC=-5A ; VCE=-5V 2N5623/5627 2 90 40 IC=-1A ; VCE=-12V 2N5623/5627 200 30 MHz Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5621 2N5623 2N5625 2N5627 PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 outline dimensions 3