Inchange Semiconductor Product Specification 2N5598 2N5600 2N5602 2N5604 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector saturation voltage APPLICATIONS ・For high frequency power amplifier ; audio power amplifier and drivers. PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol 体 导 电半 Absolute maximum ratings(Ta=℃) SYMBOL VCBO 固 PARAMETER 2N5598 Collector-base voltage VEBO N O C EMI 2N5600/5602 S G N HA 2N5604 VCEO INC Collector-emitter voltage R O T DUC CONDITIONS 2N5598 2N5600/5602 Open emitter Open base 2N5604 Emitter-base voltage VALUE UNIT 80 100 V 120 60 80 V 100 Open collector 5 V 2 A 20 W IC Collector current PD Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ VALUE UNIT 4.37 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N5598 2N5600 2N5602 2N5604 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N5598 VCEO(SUS) Collector-emitter sustaining voltage TYP. MAX UNIT 60 IC=50mA ;IB=0 2N5600/5602 2N5604 VCEsat MIN V 80 100 Collector-emitter saturation voltage IC=1A; IB=0.1A 1.0 V VBE Base-emitter on voltage IC=1A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=Rated VCBO; IE=0 0.1 mA ICEO Collector cut-off current VCE= Rated VCEO,IB=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE 体 导 电半 2N5598/5602 固 DC current gain fT N O C EMI 2N5600/5604 S G N A 2N5598/5602 Transition frequency INCH 2N5600/5604 IC=1A ; VCE=5V R O T DUC 70 200 30 90 60 IC=0.5A ; VCE=10V 2 MHz 50 Inchange Semiconductor Product Specification 2N5598 2N5600 2N5602 2N5604 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 电半 固 N O C EMI INC S G N HA Fig.2 outline dimensions 3 R O T DUC