NTUD3127C Small Signal MOSFET 20 V, 200 mA / −180 mA, Complementary, 1.0 x 1.0 mm SOT−963 Package Features • Complementary MOSFET Device • 1.5 V Gate Voltage Rating • Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely • Thin Environments such as Portable Electronics. These are Pb−Free Devices http://onsemi.com V(BR)DSS RDS(on) Max 5.0 W @ −4.5 V P−Channel −20 V 7.0 W @ −2.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Parameter Drain−to−Source Voltage Gate−to−Source Voltage N−Channel Continuous Drain Current (Note 1) P−Channel Continuous Drain Current (Note 1) Power Dissipation (Note 1) Pulsed Drain Current Symbol Value Unit VDSS 20 V ±8 V VGS Steady State TA = 25°C 160 TA = 85°C 115 tv5s TA = 25°C Steady State TA = 25°C TA = 85°C −100 tv5s TA = 25°C −180 Steady State ID 200 −140 3.0 W @ 4.5 V 4.0 W @ 2.5 V N−Channel 20 V PD PINOUT: SOT−963 S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 N−Channel 800 tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) (Note 2) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) IDM −600 MARKING DIAGRAM mA TJ, TSTG −55 to 150 °C IS 200 mA 260 °C TL Top View mW 200 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz. Cu. 2. Pulse Test: pulse width v300 ms, duty cycle v2% 0.20 A 6.0 W @ 1.8 V 10 W @ 1.5 V 125 TA = 25°C tv5s P−Channel mA −0.18 A 10 W @ −1.8 V 14 W @ −1.5 V Applications • Load Switch with Level Shift • Optimized for Power Management in Ultra Portable Equipment ID Max SM SOT−963 CASE 527AA S M 1 = Specific Device Code = Date Code ORDERING INFORMATION Device Package Shipping† NTUD3127CT5G SOT−963 (Pb−Free) 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2008 August, 2008 − Rev. 1 1 Publication Order Number: NTUD3127C/D NTUD3127C THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient – Steady State, Minimum Pad (Note 3) Symbol Max Unit RqJA 1000 °C/W Junction−to−Ambient – t v 5 s (Note 3) 600 3. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz. Cu. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol N/P Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current N P N VGS = 0 V VGS = 0 V, VDS = 5.0 V IDSS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS IGSS P VGS = 0 V, VDS = −5.0 V N VGS = 0 V, VDS = 16 V P VGS = 0 V, VDS= −16 V N ID = 250 mA 20 ID = −250 mA −20 V TJ = 25°C 50 TJ = 85°C 200 TJ = 25°C −50 TJ = 85°C −200 100 TJ = 25°C −100 100 VDS = 0 V, VGS = ±5.0 V P −100 nA nA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage VGS(TH) Drain−to−Source On Resistance RDS(on) Forward Transconductance gFS N VGS = VDS P ID = 250 mA 0.4 1.0 ID = −250 mA −0.4 −1.0 N VGS = 4.5 V, ID = 100 mA 1.5 3.0 P VGS = −4.5V, ID = −100 mA 4.0 5.0 N VGS = 2.5 V, ID = 50 mA 2.0 4.0 P VGS = −2.5V, ID = −50 mA 5.0 7.0 N VGS = 1.8 V, ID = 20 mA 3.0 6.0 P VGS = −1.8V, ID = −20 mA 6.5 10 N VGS = 1.5 V, ID = 10 mA 4.0 10 P VGS = −1.5 V, ID = −10 mA 7.5 14 N VGS = 1.2 V, ID = 1.0 mA 5.5 P VGS = −1.2 V, ID = −1.0 mA 11.5 N VDS = 5.0 V, ID = 125 mA 0.35 P VDS = −5.0 V, ID = −125 mA 0.26 V W S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 9.0 f = 1 MHz, VGS = 0 V VDS = 15 V N 3.0 2.2 12 f = 1 MHz, VGS = 0 V VDS = −15 V P 4. Switching characteristics are independent of operating junction temperatures http://onsemi.com 2 2.7 1.0 pF NTUD3127C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol N/P Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 15 N VGS = 4.5 V, VDD = 10 V, ID = 200 mA, RG = 2.0 W 24 90 tf 60 td(ON) 20 tr td(OFF) P VGS = −4.5 V, VDD = −15 V, ID = −180 mA, RG = 2.0 W tf ns 37 112 97 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD N VGS = 0 V, IS = 10 mA P VGS = 0 V, IS = −10 mA 4. Switching characteristics are independent of operating junction temperatures http://onsemi.com 3 TJ = 25°C 0.60 1.0 −0.65 −1.0 V NTUD3127C TYPICAL PERFORMANCE CURVES − N−CHANNEL VDS ≥ 5 V ID, DRAIN CURRENT (AMPS) 2.5 V 0.3 0.4 TJ = 25°C VGS = 3 V to 5 V 2.0 V 0.2 1.5 V 0.1 1.0 V 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 1 3 2 4 0.3 0.2 0.1 4 1 3 2 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 0 ID = 200 mA TJ = 25°C 10 5 0 0 2 1 4 3 5 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 5 2.5 TJ = 25°C VGS = 2.5 V 2.0 1.5 VGS = 4.5 V 1.0 0.5 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 ID, DRAIN CURRENT (AMPS) Figure 4. On−Resistance vs. Drain Current and Gate Voltage Figure 3. On−Resistance vs. Gate Voltage 1.75 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = 25°C VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 15 1.5 TJ = 125°C TJ = −55°C 0 5 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (AMPS) 0.4 1000 VGS = 0 V ID = 200 mA VGS = 4.5 V IDSS, LEAKAGE (nA) 1.25 1.0 0.75 0.5 TJ = 150°C 100 TJ = 125°C 10 0.25 0 −50 −25 0 25 50 75 100 125 150 1 0 4 8 12 16 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 4 20 NTUD3127C TYPICAL PERFORMANCE CURVES − N−CHANNEL 1000 VDD = 10 V ID = 200 mA VGS = 4.5 V 12 Ciss 9 6 t, TIME (ns) VGS = 0 V TJ = 25°C 100 td(off) tf tr td(on) 10 Coss 3 Crss 0 0 2 4 6 8 10 12 14 16 18 20 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1 1 Figure 7. Capacitance Variation 10 RG, GATE RESISTANCE (OHMS) Figure 8. Resistive Switching Time Variation vs. Gate Resistance 0.2 IS, SOURCE CURRENT (AMPS) C, CAPACITANCE (pF) 15 VGS = 0 V TJ = 25°C 0.15 0.1 0.05 0 0 0.2 0.4 0.6 0.8 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Diode Forward Voltage vs. Current http://onsemi.com 5 1.0 100 NTUD3127C TYPICAL PERFORMANCE CURVES − P−CHANNEL VGS = 3.5 V to 5 V 0.32 ID, DRAIN CURRENT (AMPS) 3.0 V 0.28 0.36 TJ = 25°C ID, DRAIN CURRENT (AMPS) 0.36 2.5 V 0.24 2.0 V 0.20 0.16 0.12 1.5 V 0.08 0.04 1.0 V 1 4 TJ = 25°C 0.20 0.16 0.12 0.08 0.04 0 5 0 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1 3 4 2 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 10. On−Region Characteristics Figure 11. Transfer Characteristics 12 ID = 180 mA TJ = 25°C 8 4 0 0 2 1 3 5 4 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 6 VGS = 2.5 V 5 4 VGS = 4.5 V 3 2 1 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 ID, DRAIN CURRENT (AMPS) Figure 13. On−Resistance vs. Drain Current and Gate Voltage 1.75 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 5 TJ = 25°C Figure 12. On−Resistance vs. Gate Voltage 1.5 TJ = 125°C 0.24 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 3 2 TJ = −55°C 0.28 0 0 VDS ≥ 5 V 0.32 1000 VGS = 0 V ID = 180 mA VGS = 4.5 V TJ = 150°C IDSS, LEAKAGE (nA) 1.25 1.0 0.75 0.5 100 TJ = 125°C 10 0.25 0 −50 −25 0 25 50 75 100 125 150 1 0 4 8 12 16 20 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 14. On−Resistance Variation with Temperature Figure 15. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 6 NTUD3127C TYPICAL PERFORMANCE CURVES − P−CHANNEL 1000 VDD = 10 V ID = 180 mA VGS = 4.5 V Ciss VGS = 0 V TJ = 25°C 8 4 t, TIME (ns) 12 td(off) tf tr 100 td(on) 10 Coss Crss 0 0 2 16 18 20 4 6 8 10 12 14 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1 1 Figure 16. Capacitance Variation 10 RG, GATE RESISTANCE (OHMS) Figure 17. Resistive Switching Time Variation vs. Gate Resistance 0.18 IS, SOURCE CURRENT (AMPS) C, CAPACITANCE (pF) 16 VGS = 0 V TJ = 25°C 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 0 0.2 0.4 0.6 0.8 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 18. Diode Forward Voltage vs. Current http://onsemi.com 7 1.0 100 NTUD3127C PACKAGE DIMENSIONS SOT−963 CASE 527AA−01 ISSUE D A −Y− D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. L −X− 6 5 4 1 2 3 HE E e DIM A b C D E e L HE C b 6X 0.08 X Y MILLIMETERS MIN NOM MAX 0.40 0.45 0.50 0.10 0.15 0.20 0.05 0.10 0.15 0.95 1.00 1.05 0.75 0.80 0.85 0.35 BSC 0.05 0.10 0.15 0.95 1.00 1.05 INCHES NOM MAX 0.018 0.020 0.006 0.008 0.004 0.006 0.039 0.041 0.032 0.034 0.014 BSC 0.002 0.004 0.006 0.037 0.039 0.041 MIN 0.016 0.004 0.002 0.037 0.03 SOLDERING FOOTPRINT* 0.35 0.014 0.35 0.014 0.90 0.0354 0.20 0.008 0.20 0.008 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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