Si1402DH New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.077 @ VGS = 4.5 V 3.4 0.120 @ VGS = 2.5 V 2.5 D TrenchFETr Power MOSFET: 2.5-V Rated APPLICATIONS D Load Switch for Portable Applications Product Is Completely Pb-free SOT-363 SC-70 (6-LEADS) 1 6 D D 2 5 D G 3 4 S Marking Code AE XX YY D Lot Traceability and Date Code Part # Code Top View Ordering Information: Si1402DH-T1—E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "12 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD V 3.4 2.7 2.7 2.2 IDM 8 1.2 0.8 1.45 0.95 0.94 0.6 TJ, Tstg Unit −55 to 150 A W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 5 sec Steady State Steady State RthJA RthJF Typical Maximum 65 85 87 130 40 50 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 73328 S-50527—Rev. A, 28-Mar-05 www.vishay.com 1 Si1402DH New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 0.6 IGSS Typ Max Unit 1.6 V VDS = 0 V, VGS = "12 V "100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55_C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea rDS(on) VDS w 5 V, VGS = 4.5 V 4 mA A VGS = 4.5 V, ID = 3.0 A 0.064 0.077 VGS = 2.5 V, ID = 2.0 A 0.095 0.120 gfs VDS = 5 V, ID = 3.0 A 10 VSD IS = 1.05 A, VGS = 0 V 0.80 1.1 3 4.5 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time VDS = 15 V, VGS = 4.5 V, ID = 2.0 A 0.6 nC 1.0 f = 1.0 MHz 2.4 W td(on) 5 8 tr 12 23 13 23 7 12 15 25 7.5 12 td(off) Fall Time tf Source-Drain Reverse Recovery Time trr Reverse Recovery Charge Qrr VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W IF = 1.05 1 05 A A, di/dt = 100 A/ms ns nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73328 S-50527—Rev. A, 28-Mar-05 Si1402DH New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 8 8 7 VGS = 5 thru 2.5 V 6 I D − Drain Current (A) I D − Drain Current (A) 7 5 4 3 2V 2 1 0 1 2 5 4 3 TC = 125_C 2 25_C 1 1.5 V 0 6 3 4 0 0.0 5 0.5 VDS − Drain-to-Source Voltage (V) 0.4 2.5 3.0 360 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 2.0 Capacitance 450 0.3 0.2 VGS = 2.5 V 0.1 Ciss 270 180 90 Coss VGS = 4.5 V 0.0 Crss 0 0 2 4 6 8 10 0 6 Gate Charge 6 1.8 VDS = 15 V ID = 2 A 18 24 30 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 3 A 1.6 rDS(on) − On-Resiistance (Normalized) 5 12 VDS − Drain-to-Source Voltage (V) ID − Drain Current (A) V GS − Gate-to-Source Voltage (V) 1.5 VGS − Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.5 1.0 −55_C 4 3 2 1 1.4 1.2 1.0 0.8 0 0 1 2 3 Qg − Total Gate Charge (nC) Document Number: 73328 S-50527—Rev. A, 28-Mar-05 4 5 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) www.vishay.com 3 Si1402DH New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage r DS(on)− On-Resistance ( W ) I S − Source Current (A) TJ = 150_C 1 On-Resistance vs. Gate-to-Source Voltage 0.25 10 TJ = 25_C 0.20 ID = 3 A 0.15 0.10 0.05 0.00 0.1 0.00 0.3 0.6 0.9 1.2 0 1.5 1 VSD − Source-to-Drain Voltage (V) 2 3 4 5 VGS − Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power, Junction-to-Ambient 0.4 8 ID = 250 mA 6 −0.0 Power (W) V GS(th) Variance (V) 0.2 −0.2 4 2 −0.4 −0.6 −50 −25 0 25 50 75 100 125 0 150 0.1 0.01 TJ − Temperature (_C) 1 10 30 Time (sec) 100 Safe Operating Area, Junction-to-Case IDM Limited I D − Drain Current (A) 10 *rDS(on) Limited 100 ms 1 1 ms ID(on) Limited 0.1 10 ms BVDSS Limited 0.01 0.1 100 ms TC = 25_C Single Pulse 1 10 s, 1 s dc 10 100 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified www.vishay.com 4 Document Number: 73328 S-50527—Rev. A, 28-Mar-05 Si1402DH New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 105_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 0.01 10−4 4. Surface Mounted 10−3 10−2 10−1 1 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73328. Document Number: 73328 S-50527—Rev. A, 28-Mar-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1