New Product Si1433DH Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.150 at VGS = - 10 V - 2.2 0.260 at VGS = - 4.5 V - 1.6 • TrenchFET® Power MOSFETS: 1.8 V Rated • Thermally Enhanced SC-70 Package Pb-free Available RoHS* APPLICATIONS COMPLIANT • Load Switches - Notebook PC - Servers SOT-363 SC-70 (6-LEADS) D 1 6 D D 2 5 D G 3 4 BE XX YY Marking Code Lot Traceability and Date Code S Part # Code Top View Ordering Information: Si1433DH-T1 Si1433DH-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C Continuous Diode Current (Diode Conduction)a IS TA = 25 °C TA = 85 °C PD - 1.9 - 1.7 - 1.4 -8 - 1.4 - 0.9 1.45 0.95 0.75 0.5 TJ, Tstg Operating Junction and Storage Temperature Range V - 2.2 IDM Pulsed Drain Current Maximum Power Dissipationa ID Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t≤5s Steady State Steady State RthJA RthJF Typical Maximum 65 85 105 130 38 48 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 Board. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72323 S-71951-Rev. B, 10-Sep-07 www.vishay.com 1 New Product Si1433DH Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min -1 Typ Max Unit Static VGS(th) VDS = VGS, ID = - 100 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) Gate Threshold Voltage Forward Transconductancea Diode Forward Voltage a -3 V ± 100 nA VDS = - 16 V, VGS = 0 V -1 VDS = - 16 V, VGS = 0 V, TJ = 85 °C -5 VDS = - 5 V, VGS = - 4.5 V µA -4 A VGS = - 10 V, ID = - 2.2 A 0.120 0.150 VGS = - 4.5 V, ID = - 1.6 A 0.210 0.260 gfs VDS = - 10 V, ID = - 2.2 A 4 VSD IS = - 1.2 A, VGS = 0 V - 0.85 - 1.2 3.1 5 Ω S V Dynamicb Total Gate Charge Qg VDS = - 15 V, VGS = - 4.5 V, ID = - 2.2 A Gate-Source Charge Qgs Gate-Drain Charge Qgd 1.6 Turn-On Delay Time td(on) 11 VDD = - 15 V, RL = 15 Ω ID ≅ - 1 A, VGEN = - 10 V, RG = 6 Ω tr Rise Time td(off) Turn-Off Delay Time tf Fall Time nC 1.0 17 17 26 18 27 13 20 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 8 8 TC = - 55 °C VGS = 10 thru 5 V 7 7 I D - Drain Current (A) I D - Drain Current (A) 25 °C 6 5 4V 4 3 6 5 125 °C 4 3 2 2 1 1 3V 0 0 0 www.vishay.com 2 1 2 3 4 5 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5 Document Number: 72323 S-71951-Rev. B, 10-Sep-07 New Product Si1433DH Vishay Siliconix 0.75 350 0.60 280 C - Capacitance (pF) r DS(on) - On-Resistance (Ω) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.45 0.30 VGS = 4.5 V 140 Coss VGS = 10 V 0.15 Ciss 210 70 Crss 0 0.00 0 1 2 3 4 5 6 7 0 8 18 24 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Capacitance 30 1.6 VGS = 10 V ID = 2.2 A VDS = 15 V ID = 2.2 A 1.4 r DS(on) - On-Resistance (Normalized) 8 6 4 1.2 1.0 0.8 2 0.6 - 50 0 0 1 2 3 4 5 6 - 25 Gate Charge 25 50 75 100 125 150 On-Resistance vs. Junction Temperature 0.70 r DS(on) - On-Resistance (Ω) 10 TJ = 150 °C 1 TJ = 25 °C 0.56 0.42 ID = 2.2 A 0.28 0.14 0.00 0.1 0.00 0 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) I S - Source Current (A) 12 On-Resistance vs. Drain Current 10 VGS - Gate-to-Source Voltage (V) 6 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 72323 S-71951-Rev. B, 10-Sep-07 1.5 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 New Product Si1433DH Vishay Siliconix 0.6 35 0.4 28 0.2 21 Power (W) V GS(th) Variance (V) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted ID = 250 µA 0.0 14 - 0.2 7 - 0.4 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 I D - Drain Current (A) Limited by rDS(on)* 1 1 ms 10 ms 100 ms 1s 0.1 TC = 25 °C Single Pulse 10 s DC 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which rDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 105 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72323 S-71951-Rev. B, 10-Sep-07 New Product Si1433DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72323. Document Number: 72323 S-71951-Rev. B, 10-Sep-07 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1