RPI-1040 Thin type / Surface Mount type 4 Direction Detector Absolute maximum ratings (Ta=25°C) Symbol Limits Unit Forward current IF 50 mA Reverse voltage VR 5 V Power dissipation PD 80 mW Collector-emitter voltage VCEO 30 V Emitter-collector voltage VECO 4.5 V Collector current IC 30 mA Collector power dissipation PC 80 mW Operating temperature Topr −25 to +85 °C Storage temperature Tstg −30 to +85 °C Applications DSC(Digital steal camera) DVC(Digital video camera) Digital handy phone, Fan herater, Projector Features 1) Surface Mount type 2) Optical Sensor 3) 4 Pirection Detector 4) Noise less type Electrical and optical characteristics (Ta=25°C) Output Input charac- characteristics teristics Parameter Transfer characteristics Conditions Symbol Min. Typ. Max. Unit Forward voltage VF − 1.1 1.3 V IF=5mA Reverse current IR − − 10 μA VR=10V ICEO − − 0.5 μA VCE=10V IC 50 80 − μA VCE=5V, IF=5mA Ileak − 10 20 μA VCE=5V, IF=5mA Dark current Collector current DC leakage Photo Infrared transistor light emitter diode current Collector-emitter saturation voltage VCE(sat) − − 0.4 V Response time Rise time Fall time tr − 10 − μs tf − 10 − μs Peak light emitting wavelength λP − 950 − nm Maximum sensitivity wavelength λP − 800 − nm IF=5mA, IC=0.05mA VCC=5V, Ic=0.05mA, RL=100Ω IF=50mA ∗ Non-coherent Infrared light emitting diode used. − 60 FORWARD CURRENT : IF (mA) 50 40 30 20 10 0 −25 0 25 50 75 50 40 30 20 10 0 100 75 °C 50 °C 25 °C 0 °C −25 °C 0.9 AMBIENT TEMPERATURE : Ta (°C) COLLECTOR CURRENT : IC (mA) 80 60 40 20 10 25 40 55 70 85 AMBIENT TEMPERATURE : Ta (°C) Fig.4 Relative output vs. ambient temperature 80 60 40 20 0 −25 0 25 50 75 100 AMBIENT TEMPERATURE : Ta (°C) 0.15 VCE=5V 1 0.8 0.6 0.4 0.2 0 0 100 Fig.3 Power dissipation / collector power dissipation vs. ambient temperature 1.2 IF=5mA VCE=5V 5 1.5 Fig.2 Forward current vs. forward voltage 120 0 −35 −20 1.3 FORWARD VOLTAGE : VF (V) Fig.1 Forward current falloff 100 1.1 DC LEAKAGE CURRENT : Ileak (mA) FORWARD CURRENT : IF (mA) 60 POWER DISSIPATION / COLLECTOR POWER DISSIPTION : PD/PC (mW) Electrical and optical characteristics curves RELATIVE COLLECTOR CURRENT : Ic (%) Output (phototransistor ) Input (LED) Parameter VCE=5V 0.1 0.05 0 10 20 30 40 50 0 10 20 30 40 50 FORWARD CURRENT : IF (mA) FORWARD CURRENT : IF (mA) Fig.5 Collector current vs. forward current Fig.6 DC leakage current vs. forward current Dimensions (Unit : mm) 3. 1 Stamp (year, week, day of the week) 3. 1 1PIN mark 0. 8 A hole 2. 9 0. 9 0. 6 1. 7 2. 9 Pattern Internal connection diagram Anode Cathode Collector2 Collector 1 Detector 2 Detector 1 Emitter2 800 IF=50mA tr 600 tf 500 400 300 200 COLLECTOR CURRENT : IC (mA) VCE=10V DARK CURRENT : ICEO (nA) RESPONSE TIME : t (μs) 0.8 10000 VCC=5V 700 IC=0.1mA 1000 100 10 1 0.1 100 0 1 10 0.01 −25 100 25 75 AMBIENT TEMPERATURE : Ta (°C) LOAD RESISTANCE : RL (kΩ) Fig.7 Response time vs. load resistance input Notes: Unspecified tolerance shall be ±0.2 . Emi tter 1 Fig.8 Dark current vs. ambient temperature 0.7 IF=40mA 0.6 0.5 IF=30mA 0.4 IF=20mA 0.3 0.2 IF=10mA 0.1 0 0 IF=5mA 2 4 6 8 10 COLLECTOR TO EMITTER VOLTAGE: VCE (V) Fig.9 Output characteristics VCC 90% VOUT1 VOUT2 RIF RL1 RL2 10% VOUT tr tf Fig.10 Response time measurement circuit 2010.04 Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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