VS-GB75YF120UT www.vishay.com Vishay Semiconductors IGBT 4 pack Module, 75 A FEATURES • Square RBSOA • HEXFRED® low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Copper baseplate • Low stray inductance design • UL approved file E78996 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ECONO2 4 pack BENEFITS PRODUCT SUMMARY • Benchmark efficiency for SMPS appreciation in particular HF welding VCES 1200 V IC at TC = 67 °C 75 A • Rugged transient performance VCE(on) (typical) 3.4 V • Low EMI, requires less snubbing Speed 8 kHz to 30 kHz Package ECONO2 4 pack Circuit 4 pack with thermistor • Direct mounting to heatsink space saving • PCB solderable terminals • Low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage Continuous collector current SYMBOL TEST CONDITIONS VCES IC Pulsed collector current (See fig. C.T.5) ICM Clamped inductive load current ILM TC = 25 °C TC = 80 °C MAX. UNITS 1200 V 100 67 200 200 TC = 25 °C Diode continuous forward current IF Diode maximum forward current IFM 150 Gate to emitter voltage VGE ± 20 Maximum power dissipation (IGBT) PD Maximum operating junction temperature TC = 80 °C A 60 40 TC = 25 °C 480 TC = 80 °C 270 TJ 150 Storage temperature range TStg -40 to +125 Isolation voltage VISOL AC 2500 (min) V W °C V Revision: 05-Apr-16 Document Number: 93172 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB75YF120UT www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Threshold voltage temperature coefficient Zero gate voltage collector current SYMBOL VBR(CES) VCE(ON) VGE(th) VGE(th)/TJ ICES Diode forward voltage drop VFM Gate to emitter leakage current IGES TEST CONDITIONS VGE = 0 V, IC = 500 μA MIN. TYP. MAX. 1200 - - IC = 75 A, VGE = 15 V - 3.4 4.0 IC = 100 A, VGE = 15 V - 3.8 4.5 IC = 75 A, VGE = 15 V, TJ = 125 °C - 4.0 4.5 IC = 100 A, VGE = 15 V, TJ = 125 °C - 4.53 5.1 VCE = VGE, IC = 250 μA UNITS V 4.0 5.0 6.0 VCE = VGE, IC = 1 mA (25 °C to 125 °C) - -11 - VGE = 0 V, VCE = 1200 V - 7 250 VGE = 0 V, VCE = 1200 V, TJ = 125 °C - 580 2000 IF = 75 A - 3.7 4.9 IF = 100 A - 4.1 5.5 IF = 75 A, TJ = 125 °C - 3.7 5.1 IF = 100 A, TJ = 125 °C - 4.2 5.7 VGE = ± 20 V - - ± 200 nA MIN. TYP. MAX. UNITS - 630 - - 65 - mV/°C μA V SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL Total gate charge (turn-on) QG Gate to emitter charge (turn-on) QGE Gate to collector charge (turn-on) QGC Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on delay time td(on) Rise time Turn-off delay time Fall time tr td(off) TEST CONDITIONS IC = 75 A VCC = 600 V VGE = 15 V IC = 75 A, VCC = 600 V VGE = 15 V, Rg = 5 , L = 500 μH TJ = 25 °C (1) IC = 75 A, VCC = 600 V VGE = 15 V, Rg = 5 , L = 500 μH TJ = 125 °C (1) IC = 75 A, VCC = 600 V VGE = 15 V, Rg = 5 , L = 500 μH TJ = 125 °C tf Reverse bias safe operating area RBSOA TJ = 150 °C, IC = 200 A Rg = 10 , VGE = 15 V to 0 V Short circuit safe operating area SCSOA TJ = 150 °C VCC = 900 V, VP = 1200 V Rg = 10 , VGE = 15 V to 0 V Diode peak reverse recovery current Irr Diode reverse recovery time trr Total reverse recovery charge Qrr - 250 - - 1.74 - - 1.46 - - 3.20 - - 2.44 - - 2.35 - - 4.79 - - 268 - - 43 - - 308 - - 127 - - - TJ = 25 °C - 13 18 TJ = 125 °C - 19 23 - 132 189 - 200 270 TJ = 125 °C VCC = 200 V IF = 50 A dI/dt = 10 A/μs mJ ns Fullsquare 10 TJ = 25 °C nC TJ = 25 °C - 858 1700 TJ = 125 °C - 1900 3105 μs A ns nC Note (1) Energy losses include “tail” and diode reverse recovery Revision: 05-Apr-16 Document Number: 93172 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB75YF120UT www.vishay.com Vishay Semiconductors INTERNAL NTC - THERMISTOR SPECIFICATIONS PARAMETER SYMBOL VALUE UNITS R25 TC = 25 °C 5000 R100 TC = 100 °C 493 ± 5 % R2 = R25 exp. [B25/50 (1/T2 - 1/(298.15 K))] 3375 ± 5 % K 220 °C Dissipation constant 2 mW/°C Thermal time constant 8 s UNITS Resistance B-value B25/50 TEST CONDITIONS Maximum operating temperature THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Junction to case IGBT Junction to case DIODE Case to sink, flat, greased surface SYMBOL MIN. TYP. MAX. RthJC (IGBT) - - 0.26 RthJC (DIODE) - - 0.56 RthCS (MODULE) - 0.02 - 2.7 - 3.3 Nm - 170 - g Mounting torque (M5) Weight °C/W 1000 160 140 100 100 10 IC (A) TC (°C) 120 80 60 1 40 0.1 20 0 0.01 0 20 40 60 80 100 120 1 10 100 IC (A) 1000 10000 VCE (V) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 3 - Forward SOA TC = 25 °C; TJ 150 °C 1000 500 400 IC (A) PD (W) 100 300 200 10 100 0 1 0 20 40 60 80 100 120 140 160 TC (°C) Fig. 2 - Power Dissipation vs. Case Temperature 10 100 1000 10000 VCE (V) Fig. 4 - Reverse Bias SOA TJ = 150 °C; VGE = 15 V Revision: 05-Apr-16 Document Number: 93172 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB75YF120UT www.vishay.com 160 Vishay Semiconductors 20 VGE = 18V VGE = 15V VGE = 12V VGE = 9V 140 120 VCE (V) 100 ICE (A) 16 ICE = 75A ICE = 50A 14 ICE = 25A 18 80 60 12 10 8 6 40 4 20 2 0 0 0 1 2 3 4 5 7 6 9 11 15 17 19 VGE (V) VCE (V) Fig. 5 - Typical IGBT Output Characteristics TJ = 25 °C; tp = 500 μs Fig. 8 - Typical VCE vs. VGE TJ = 25 °C 20 160 VGE = 18V VGE = 15V VGE = 12V VGE = 9V 140 120 ICE = 75A ICE = 50A 18 16 ICE = 25A 14 VCE (V) 100 ICE (A) 13 80 60 12 10 8 6 40 4 20 2 0 0 1 2 3 4 5 6 7 7 8 9 11 13 15 17 VCE (V) VGE (V) Fig. 6 - Typical IGBT Output Characteristics TJ = 125 °C; tp = 500 μs Fig. 9 - Typical VCE vs. VGE TJ = 125 °C 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 19 300 TJ = 25°C TJ = 125°C 250 200 ICE (A) IF (A) 0 150 100 Tj = 25°C Tj = 125°C 50 0 0.0 1.0 2.0 3.0 4.0 5.0 5 6 7 8 9 10 11 12 VF (V) VGE (V) Fig. 7 - Typical Diode Forward Characteristics tp = 500 μs Fig. 10 - Typical Transfer Characteristics VCE = 20 V; tp = 500 μs Revision: 05-Apr-16 Document Number: 93172 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB75YF120UT www.vishay.com Vishay Semiconductors 1000 1 tdOFF Switching Time (ns) TJ = 125°C ICES (mA) 0.1 0.01 tdON tF 100 tR TJ = 25°C 10 0.001 400 600 800 1000 20 1200 30 40 50 Fig. 11 - Typical Zero Gate Voltage Collector Current 80 Fig. 14 - Typical Switching Time vs. IC TJ = 125 °C; L = 500 μH; VCC = 600 V, Rg = 5 ; VGE = 15 V 5.5 14000 5 12000 TJ = 25°C 4.5 10000 Energy (μJ) Vgeth (V) 70 IC (A) VCES (V) 4 TJ = 125°C 3.5 8000 EON 6000 3 4000 2.5 2000 2 EOFF 0 0 0.2 0.4 0.6 0.8 1 0 10 20 30 40 50 RG (Ω) IC (mA) Fig. 15 - Typical Energy Loss vs. Rg TJ = 125 °C; L = 500 μH; VCC = 600 V, IC = 75 A; VGE = 15 V Fig. 12 - Typical Threshold Voltage 2500 Switching Time (ns) 10000 2000 Energy (μJ) 60 EON EOFF 1500 1000 tdOFF tdON tF 100 tR 1000 30 40 50 60 70 80 IC (A) Fig. 13 - Typical Energy Loss vs. IC TJ = 125 °C; L = 500 μH; VCC = 600 V, Rg = 5 ; VGE = 15 V 10 0 10 20 30 40 50 RG (Ω) Fig. 16 - Typical Switching Time vs. Rg TJ = 125 °C; L = 500 μH; VCC = 600 V, IC = 75 A; VGE = 15 V Revision: 05-Apr-16 Document Number: 93172 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB75YF120UT www.vishay.com Vishay Semiconductors 100 120 100 80 5 ohm 60 IRR (A) IRR (A) 80 60 27 ohm 40 40 20 47 ohm 20 0 0 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 0 10 20 30 40 50 RG (Ω) IF (A) Fig. 19 - Typical Diode IRR vs. Rg TJ = 125 °C; IF = 75 A Fig. 17 - Typical Diode IRR vs. IF TJ = 125 °C 100 16 14 80 10 60 VGE (V) IRR (A) 12 40 typical value 8 6 4 20 2 0 400 800 1200 1600 0 2000 0 100 200 300 400 500 600 700 dIF / dt (A/ μs) QG, Total Gate Charge (nC) Fig. 18 - Typical Diode IRR vs. dIF/dt VCC = 600 V; IF = 75 A Fig. 20 - Typical Gate Charge vs. VGE ICE = 5.0 A; L = 600 μH 1 Thermal Response (ZthJC ) D = 0.50 0.1 0.20 0.10 0.05 0.01 0.001 0.0001 1E-005 1E-006 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 0.0001 0.001 0.01 0.1 1 10 t1, Rectangular Pulse Duration (s) Fig. 21 - Maximum Transient Thermal Impedance, Junction to Case (IGBT) Revision: 05-Apr-16 Document Number: 93172 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB75YF120UT www.vishay.com Vishay Semiconductors Driver L + VCC - D.U.T. 0 D + C - 1K 900 V D.U.T. Fig. 22 - Gate Charge Circuit (Turn-Off) Fig. 24 - S.C. SOA Circuit L Diode clamp/ D.U.T. + - 80 V L + - -5V D.U.T. D.U.T./ Driver 1000 V Rg + VCC Rg Fig. 23 - RBSOA Circuit Fig. 25 - Switching Loss Circuit R= VCC ICM D.U.T. + VCC Rg Fig. 26 - Resistive Load Circuit Revision: 05-Apr-16 Document Number: 93172 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB75YF120UT www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- G B 75 Y F 120 U T 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Insulated gate bipolar transistor (IGBT) 3 - B = IGBT Gen 5 4 - Current rating (75 = 75 A) 5 - Circuit configuration (Y = 4 pack) 6 - Package indicator (F = ECONO2) 7 - Voltage rating (120 = 1200 V) 8 - Speed/type (U = Ultrafast IGBT) 9 - T = Thermistor CIRCUIT CONFIGURATION 48 49 21 22 QB1 QB3 41 28 43 QB2 29 5 6 7 15 16 17 QB4 37 32 38 33 10 12 23 24 46 47 NTC LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95540 Revision: 05-Apr-16 Document Number: 93172 8 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors ECONO2 4PACK U Series DIMENSIONS in millimeters Y2:1 1 Z2:1 0.85 0.6 0.5 1.15 -- 0.02 0.06 0.8 ± 0.03 Ø 6 (x 4) Ø 4.5 Ø 2.2 13.2 ± 0.15 105 ± 0.1 see note (1) 1.15 -- 0.02 0.06 + 10 20.5 - 0.5 Ø 2.6 Y 7.5 Z 1.5 17 ± 0.5 X2:1 30.48 0.8 ± 0.03 22.86 22.86 11.43 11.43 5 6 7 10 12 11.43 15.24 19.05 7.62 7.62 21 ± 0.03 21 22 49 48 10.5 45.4 ± 0.2 Ø 5.5 ± 0.05 11.43 11.43 29 28 23 24 33 32 47 46 38 37 42 ± 0.15 43 41 21 ± 0.03 7.62 7.62 15 16 17 7.62 7.5 - 0.3 19.05 22.86 26.67 39.49 39.49 93 ± 0.15 107.8 ± 0.2 Revision: 21-Mar-13 Document Number: 95540 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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