VS-GB50YF120N www.vishay.com Vishay Semiconductors IGBT Fourpack Module, 50 A FEATURES • Square RBSOA • HEXFRED® low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Copper baseplate • Low stray inductance design • Designed and qualified for industrial market • UL approved file E78996 ECONO2 4PACK • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY BENEFITS VCES 1200 V IC at TC = 66 °C 50 A VCE(on) (typical) 3.49 V Speed 8 kHz to 30 kHz Package ECONO2 Circuit 4 PACK • Benchmark efficiency for SMPS appreciation in particular HF welding • Rugged transient performance • Low EMI, requires less snubbing • Direct mounting to heatsink space saving • PCB solderable terminals • Low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC TEST CONDITIONS MAX. UNITS 1200 V TC = 25 °C 66 TC = 80 °C 44 Pulsed collector current See fig. C.T.5 ICM 150 Clamped inductive load current ILM 150 Diode continuous forward current IF TC = 25 °C 40 TC = 80 °C 25 Diode maximum forward current IFM 150 Gate to emitter voltage VGE ± 20 Maximum power dissipation (IGBT) PD Maximum operating junction temperature TC = 25 °C 330 TC = 80 °C 180 TJ 150 Storage temperature range TStg -40 to +125 Isolation voltage VISOL AC 2500 (min) A V W °C V Revision: 12-Jun-15 Document Number: 93653 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB50YF120N www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Threshold voltage temperature coefficient Zero gate voltage collector current SYMBOL BV(CES) VCE(ON) VGE(th) VGE(th)/TJ ICES Diode forward voltage drop VFM Gate to emitter leakage current IGES MIN. TYP. MAX. VGE = 0 V, IC = 500 μA TEST CONDITIONS 1200 - - IC = 50 A, VGE = 15 V - 3.49 3.9 IC = 75 A, VGE = 15 V - 4.15 4.5 IC = 50 A, VGE = 15 V, TJ = 125 °C - 4.16 4.5 IC = 75 A, VGE = 15 V, TJ = 125 °C - 4.97 5.4 VCE = VGE, IC = 250 μA UNITS V 4.0 4.9 6.0 VCE = VGE, IC = 1 mA (25 °C to 125 °C) - -10 - VGE = 0 V, VCE = 1200 V - 11 250 VGE = 0 V, VCE = 1200 V, TJ = 125 °C - 600 1000 IF = 50 A - 3.30 4.5 IF = 75 A - 3.90 5.0 IF = 50 A, TJ = 125 °C - 3.6 4.8 IF = 75 A, TJ = 125 °C - 4.37 5.5 VGE = ± 20 V - - ± 200 nA MIN. TYP. MAX. UNITS - 400 - - 43 - - 187 - - 0.93 - - 1.20 - - 2.13 - - 1.68 - - 1.77 - - 3.46 - - 128 - - 56 - - 292 - - 134 - mV/°C μA V SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL Total gate charge (turn-on) QG Gate to emitter charge (turn-on) QGE Gate to collector charge (turn-on) QGC Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on delay time td(on) Rise time Turn-off delay time Fall time tr td(off) TEST CONDITIONS IC = 50 A VCC = 600 V VGE = 15 V IC = 50 A, VCC = 600 V VGE = 15 V, RG = 4.7 , L = 500 μH TJ = 25 °C (1) IC = 50 A, VCC = 600 V VGE = 15 V, RG = 4.7 , L = 500 μH TJ = 125 °C (1) IC = 50 A, VCC = 600 V VGE = 15 V, RG = 4.7 , L = 500 μH TJ = 125 °C tf Reverse bias safe operating area RBSOA TJ = 150 °C, IC = 150 A RG = 10 , VGE = 15 V to 0 V Short circuit safe operating area SCSOA TJ = 150 °C VCC = 900 V, VP = 1200 V RG = 10 , VGE = 15 V to 0 V Diode peak reverse recovery current Irr Diode reverse recovery time trr Total reverse recovery charge Qrr - - TJ = 25 °C - 1.3 2.3 TJ = 125 °C - 2.0 3 - 0.453 0.49 - 0.74 0.82 TJ = 25 °C - 0.12 0.3 TJ = 125 °C - 0.4 1.5 TJ = 125 °C VCC = 600 V IF = 50 A dI/dt = 7 A/μs mJ ns Fullsquare 10 TJ = 25 °C nC μs A μs μC Note (1) Energy losses include “tail” and diode reverse recovery Revision: 12-Jun-15 Document Number: 93653 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB50YF120N www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. RthJC (IGBT) - - 0.38 RthJC (DIODE) - - 1.00 RthCS (MODULE) - 0.05 - 2.7 - 3.3 Nm - 170 - g Junction to case IGBT Junction to case DIODE Case to sink, flat, greased surface Mounting torque (M5) Weight UNITS °C/W 1000 160 140 100 120 10 IC (A) TC (°C) 100 80 1 60 40 0.1 20 0 0.01 0 10 20 30 40 50 60 70 1 10 100 IC (A) 1000 10000 VCE (V) Fig. 3 - Forward SOA TC = 25 °C; TJ 150 °C Fig. 1 - Maximum DC Collector Current vs. Case Temperature 350 1000 300 250 200 I C (A) PD (W) 100 150 10 100 50 0 1 0 20 40 60 80 100 120 140 160 TC (°C) Fig. 2 - Power Dissipation vs. Case Temperature 10 100 1000 10000 VCE (V) Fig. 4 - Reverse Bias SOA TJ = 150 °C; VGE = 15 V Revision: 12-Jun-15 Document Number: 93653 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB50YF120N www.vishay.com 160 Vishay Semiconductors 20 VGE = 18V VGE = 15V VGE = 12V VGE = 9V 140 120 VCE (V) 100 ICE (A) 16 ICE = 75A ICE = 50A 14 ICE = 25A 18 80 60 12 10 8 6 40 4 20 2 0 0 0 1 2 3 4 5 6 7 7 9 11 Fig. 5 - Typical IGBT Output Characteristics TJ = 25 °C; tp = 500 μs 120 19 20 16 ICE = 75A ICE = 50A 14 ICE = 25A 18 VCE (V) 100 ICE (A) 17 Fig. 8 - Typical VCE vs. VGE TJ = 25 °C VGE = 18V VGE = 15V VGE = 12V VGE = 9V 140 15 VGE (V) VCE (V) 160 13 80 60 12 10 8 6 40 4 20 2 0 0 0 1 2 3 4 5 6 7 7 8 9 VCE (V) 13 15 17 19 VGE (V) Fig. 6 - Typical IGBT Output Characteristics TJ = 125 °C; tp = 500 μs Fig. 9 - Typical VCE vs. VGE TJ = 125 °C 300 160 140 TJ = 25°C TJ = 125°C 250 25°C 125°C 120 200 ICE (A) 100 IF (A) 11 80 60 150 100 40 50 20 0 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 VF (V) Fig. 7 - Typical Diode Forward Characteristics tp = 500 μs 4 6 8 10 12 14 VGE (V) Fig. 10 - Typical Transfer Characteristics VCE = 20 V; tp = 500 μs Revision: 12-Jun-15 Document Number: 93653 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB50YF120N www.vishay.com Vishay Semiconductors 1 1 tdOFF Switching Time (µs) TJ = 125°C ICES (mA) 0.1 0.01 tF tdON 0.1 tR TJ = 25°C 0.001 0.01 400 600 800 1000 1200 0 20 40 VCES (V) 100 Fig. 14 - Typical Switching Time vs. IC TJ = 125 °C; L = 200 μH; VCE = 600 V, RG = 5 ; VGE = 15 V 12 5.5 TJ = 25°C 5 10 4.5 125°C IRR (A) 8 4 3.5 TJ = 125°C 6 4 25°C 3 2 2.5 0 2 0 0.2 0.4 0.6 0.8 0 1 20 40 60 80 100 dIF/ dt (A/µs) IC (mA) Fig. 15 - Typical Diode IREC vs. dIF/dt VCC = 600 V; IF = 50 A Fig. 12 - Typical Threshold Voltage 4.5 800 4 700 EON 3.5 600 3 2.5 tRR (ns) Energy (mJ) 80 IC (A) Fig. 11 - Typical Zero Gate Voltage Collector Current Vgeth (V) 60 EOFF 2 500 125°C 400 300 1.5 200 25°C 1 100 0.5 0 20 40 60 80 100 IC (A) Fig. 13 - Typical Energy Loss vs. IC TJ = 125 °C; L = 200 μH; VCE = 600 V, RG= 5 ; VGE = 15 V 0 0 20 40 60 80 100 dIF/ dt (A/µs) Fig. 16 - Typical Diode trr vs. dIF/dt VCC = 600 V; IF = 50 A Revision: 12-Jun-15 Document Number: 93653 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB50YF120N www.vishay.com Vishay Semiconductors 16 1600 14 125°C 1200 12 1000 10 VGE (V) QRR (nC) 1400 800 600 typical value 8 6 400 4 25°C 200 2 0 0 0 20 40 60 80 100 0 dIF/ dt (A/µs) 100 200 300 400 500 QG, Total Gate Charge (nC) Fig. 17 - Typical Diode Qrr vs. dIF/dt VCC = 600 V; IF = 50 A Fig. 18 - Typical Gate Charge vs. VGE ICE = 5.0 A; L = 600 μH 1 Thermal Response (ZthJC ) D = 0.50 0.20 0.1 0.10 0.05 0.01 0.02 0.01 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-005 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 t1, Rectangular Pulse Duration (s) Fig. 19 - Maximum Transient Thermal Impedance, Junction to Case (IGBT) 10 Thermal Response (ZthJC ) D = 0.50 0.20 1 0.10 0.1 0.01 0.05 SINGLE PULSE ( THERMAL RESPONSE ) 0.02 0.01 0.001 1E-006 1E-005 0.0001 0.001 t1, Rectangular Pulse Duration (s) Fig. 20 - Maximum Transient Thermal Impedance, Junction to Case (DIODE) Revision: 12-Jun-15 Document Number: 93653 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB50YF120N www.vishay.com Vishay Semiconductors Driver L + VCC - D.U.T. 0 D + C - 1K 900 V D.U.T. Fig. 21 - Gate Charge Circuit (Turn-Off) Fig. 23 - S.C. SOA Circuit L Diode clamp/ D.U.T. + - 80 V L + - -5V D.U.T. D.U.T./ Driver 1000 V Rg + VCC Rg Fig. 22 - RBSOA Circuit Fig. 24 - Switching Loss Circuit R= VCC ICM D.U.T. + VCC Rg Fig. 25 - Resistive Load Circuit Revision: 12-Jun-15 Document Number: 93653 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB50YF120N www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- G B 50 Y F 120 N 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Insulated gate bipolar transistor (IGBT) 3 - B = IGBT Generation 5 NPT 4 - Current rating (50 = 50 A) 5 - Circuit configuration (Y = Fourpack) 6 - Package indicator (F = ECONO2) 7 - Voltage rating (120 = 1200 V) 8 - Speed/type (N = Ultrafast with reduced diode, speed 8 kHz to 60 kHz) CIRCUIT CONFIGURATION 21 22 48 49 QB1 QB3 40 28 29 41 5 6 7 QB2 QB4 36 32 37 33 46 47 15 16 17 23 24 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95539 Revision: 12-Jun-15 Document Number: 93653 8 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors ECONO2 4PACK N Series DIMENSIONS in millimeters Y2:1 1 Z2:1 0.85 0.6 0.5 1.15 -- 0.02 0.06 0.8 ± 0.03 Ø 6 (x 4) Ø 4.5 Ø 2.2 13.2 ± 0.15 105 ± 0.1 see note (1) 1.15 -- 0.02 0.06 + 10 20.5 - 0.5 Ø 2.6 Y 7.5 Z 1.5 17 ± 0.5 X2:1 Ø 5.5 ± 0.05 5 6 7 7.62 7.62 11.43 11.43 21 ± 0.03 21 22 49 48 10.5 45.4 ± 0.2 23 24 29 28 47 46 33 32 42 ± 0.15 37 36 41 40 21 ± 0.03 22.86 19.05 22.86 7.62 11.43 7.62 3.81 0.8 ± 0.03 15 16 17 11.43 15.24 19.05 22.86 19.05 7.5 - 0.3 26.67 39.49 39.49 93 ± 0.15 107.8 ± 0.2 Revision: 21-Mar-13 Document Number: 95539 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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