VS-GB50YF120N Datasheet

VS-GB50YF120N
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Vishay Semiconductors
IGBT Fourpack Module, 50 A
FEATURES
• Square RBSOA
• HEXFRED® low Qrr, low switching energy
• Positive VCE(on) temperature coefficient
• Copper baseplate
• Low stray inductance design
• Designed and qualified for industrial market
• UL approved file E78996
ECONO2 4PACK
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
BENEFITS
VCES
1200 V
IC at TC = 66 °C
50 A
VCE(on) (typical)
3.49 V
Speed
8 kHz to 30 kHz
Package
ECONO2
Circuit
4 PACK
• Benchmark efficiency for SMPS appreciation in particular
HF welding
• Rugged transient performance
• Low EMI, requires less snubbing
• Direct mounting to heatsink space saving
• PCB solderable terminals
• Low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
TEST CONDITIONS
MAX.
UNITS
1200
V
TC = 25 °C
66
TC = 80 °C
44
Pulsed collector current
See fig. C.T.5
ICM
150
Clamped inductive load current
ILM
150
Diode continuous forward current
IF
TC = 25 °C
40
TC = 80 °C
25
Diode maximum forward current
IFM
150
Gate to emitter voltage
VGE
± 20
Maximum power dissipation (IGBT)
PD
Maximum operating junction temperature
TC = 25 °C
330
TC = 80 °C
180
TJ
150
Storage temperature range
TStg
-40 to +125
Isolation voltage
VISOL
AC 2500 (min)
A
V
W
°C
V
Revision: 12-Jun-15
Document Number: 93653
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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
Threshold voltage temperature coefficient
Zero gate voltage collector current
SYMBOL
BV(CES)
VCE(ON)
VGE(th)
VGE(th)/TJ
ICES
Diode forward voltage drop
VFM
Gate to emitter leakage current
IGES
MIN.
TYP.
MAX.
VGE = 0 V, IC = 500 μA
TEST CONDITIONS
1200
-
-
IC = 50 A, VGE = 15 V
-
3.49
3.9
IC = 75 A, VGE = 15 V
-
4.15
4.5
IC = 50 A, VGE = 15 V, TJ = 125 °C
-
4.16
4.5
IC = 75 A, VGE = 15 V, TJ = 125 °C
-
4.97
5.4
VCE = VGE, IC = 250 μA
UNITS
V
4.0
4.9
6.0
VCE = VGE, IC = 1 mA (25 °C to 125 °C)
-
-10
-
VGE = 0 V, VCE = 1200 V
-
11
250
VGE = 0 V, VCE = 1200 V, TJ = 125 °C
-
600
1000
IF = 50 A
-
3.30
4.5
IF = 75 A
-
3.90
5.0
IF = 50 A, TJ = 125 °C
-
3.6
4.8
IF = 75 A, TJ = 125 °C
-
4.37
5.5
VGE = ± 20 V
-
-
± 200
nA
MIN.
TYP.
MAX.
UNITS
-
400
-
-
43
-
-
187
-
-
0.93
-
-
1.20
-
-
2.13
-
-
1.68
-
-
1.77
-
-
3.46
-
-
128
-
-
56
-
-
292
-
-
134
-
mV/°C
μA
V
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Total gate charge (turn-on)
QG
Gate to emitter charge (turn-on)
QGE
Gate to collector charge (turn-on)
QGC
Turn-on switching loss
Eon
Turn-off switching loss
Eoff
Total switching loss
Etot
Turn-on switching loss
Eon
Turn-off switching loss
Eoff
Total switching loss
Etot
Turn-on delay time
td(on)
Rise time
Turn-off delay time
Fall time
tr
td(off)
TEST CONDITIONS
IC = 50 A
VCC = 600 V
VGE = 15 V
IC = 50 A, VCC = 600 V
VGE = 15 V, RG = 4.7 , L = 500 μH
TJ = 25 °C (1)
IC = 50 A, VCC = 600 V
VGE = 15 V, RG = 4.7 , L = 500 μH
TJ = 125 °C (1)
IC = 50 A, VCC = 600 V
VGE = 15 V, RG = 4.7 , L = 500 μH
TJ = 125 °C
tf
Reverse bias safe operating area
RBSOA
TJ = 150 °C, IC = 150 A
RG = 10 , VGE = 15 V to 0 V
Short circuit safe operating area
SCSOA
TJ = 150 °C
VCC = 900 V, VP = 1200 V
RG = 10 , VGE = 15 V to 0 V
Diode peak reverse recovery current
Irr
Diode reverse recovery time
trr
Total reverse recovery charge
Qrr
-
-
TJ = 25 °C
-
1.3
2.3
TJ = 125 °C
-
2.0
3
-
0.453
0.49
-
0.74
0.82
TJ = 25 °C
-
0.12
0.3
TJ = 125 °C
-
0.4
1.5
TJ = 125 °C
VCC = 600 V
IF = 50 A
dI/dt = 7 A/μs
mJ
ns
Fullsquare
10
TJ = 25 °C
nC
μs
A
μs
μC
Note
(1) Energy losses include “tail” and diode reverse recovery
Revision: 12-Jun-15
Document Number: 93653
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VS-GB50YF120N
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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
RthJC (IGBT)
-
-
0.38
RthJC (DIODE)
-
-
1.00
RthCS (MODULE)
-
0.05
-
2.7
-
3.3
Nm
-
170
-
g
Junction to case IGBT
Junction to case DIODE
Case to sink, flat, greased surface
Mounting torque (M5)
Weight
UNITS
°C/W
1000
160
140
100
120
10
IC (A)
TC (°C)
100
80
1
60
40
0.1
20
0
0.01
0
10
20
30
40
50
60
70
1
10
100
IC (A)
1000
10000
VCE (V)
Fig. 3 - Forward SOA
TC = 25 °C; TJ  150 °C
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
350
1000
300
250
200
I C (A)
PD (W)
100
150
10
100
50
0
1
0
20
40
60
80
100 120 140 160
TC (°C)
Fig. 2 - Power Dissipation vs. Case Temperature
10
100
1000
10000
VCE (V)
Fig. 4 - Reverse Bias SOA
TJ = 150 °C; VGE = 15 V
Revision: 12-Jun-15
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160
Vishay Semiconductors
20
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 9V
140
120
VCE (V)
100
ICE (A)
16
ICE = 75A
ICE = 50A
14
ICE = 25A
18
80
60
12
10
8
6
40
4
20
2
0
0
0
1
2
3
4
5
6
7
7
9
11
Fig. 5 - Typical IGBT Output Characteristics
TJ = 25 °C; tp = 500 μs
120
19
20
16
ICE = 75A
ICE = 50A
14
ICE = 25A
18
VCE (V)
100
ICE (A)
17
Fig. 8 - Typical VCE vs. VGE
TJ = 25 °C
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 9V
140
15
VGE (V)
VCE (V)
160
13
80
60
12
10
8
6
40
4
20
2
0
0
0
1
2
3
4
5
6
7
7
8
9
VCE (V)
13
15
17
19
VGE (V)
Fig. 6 - Typical IGBT Output Characteristics
TJ = 125 °C; tp = 500 μs
Fig. 9 - Typical VCE vs. VGE
TJ = 125 °C
300
160
140
TJ = 25°C
TJ = 125°C
250
25°C
125°C
120
200
ICE (A)
100
IF (A)
11
80
60
150
100
40
50
20
0
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
VF (V)
Fig. 7 - Typical Diode Forward Characteristics
tp = 500 μs
4
6
8
10
12
14
VGE (V)
Fig. 10 - Typical Transfer Characteristics
VCE = 20 V; tp = 500 μs
Revision: 12-Jun-15
Document Number: 93653
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VS-GB50YF120N
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Vishay Semiconductors
1
1
tdOFF
Switching Time (µs)
TJ = 125°C
ICES (mA)
0.1
0.01
tF
tdON
0.1
tR
TJ = 25°C
0.001
0.01
400
600
800
1000
1200
0
20
40
VCES (V)
100
Fig. 14 - Typical Switching Time vs. IC
TJ = 125 °C; L = 200 μH; VCE = 600 V, RG = 5 ; VGE = 15 V
12
5.5
TJ = 25°C
5
10
4.5
125°C
IRR (A)
8
4
3.5
TJ = 125°C
6
4
25°C
3
2
2.5
0
2
0
0.2
0.4
0.6
0.8
0
1
20
40
60
80
100
dIF/ dt (A/µs)
IC (mA)
Fig. 15 - Typical Diode IREC vs. dIF/dt
VCC = 600 V; IF = 50 A
Fig. 12 - Typical Threshold Voltage
4.5
800
4
700
EON
3.5
600
3
2.5
tRR (ns)
Energy (mJ)
80
IC (A)
Fig. 11 - Typical Zero Gate Voltage Collector Current
Vgeth (V)
60
EOFF
2
500
125°C
400
300
1.5
200
25°C
1
100
0.5
0
20
40
60
80
100
IC (A)
Fig. 13 - Typical Energy Loss vs. IC
TJ = 125 °C; L = 200 μH; VCE = 600 V, RG= 5 ; VGE = 15 V
0
0
20
40
60
80
100
dIF/ dt (A/µs)
Fig. 16 - Typical Diode trr vs. dIF/dt
VCC = 600 V; IF = 50 A
Revision: 12-Jun-15
Document Number: 93653
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16
1600
14
125°C
1200
12
1000
10
VGE (V)
QRR (nC)
1400
800
600
typical value
8
6
400
4
25°C
200
2
0
0
0
20
40
60
80
100
0
dIF/ dt (A/µs)
100
200
300
400
500
QG, Total Gate Charge (nC)
Fig. 17 - Typical Diode Qrr vs. dIF/dt
VCC = 600 V; IF = 50 A
Fig. 18 - Typical Gate Charge vs. VGE
ICE = 5.0 A; L = 600 μH
1
Thermal Response (ZthJC )
D = 0.50
0.20
0.1
0.10
0.05
0.01
0.02
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-005
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t1, Rectangular Pulse Duration (s)
Fig. 19 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)
10
Thermal Response (ZthJC )
D = 0.50
0.20
1
0.10
0.1
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
0.02
0.01
0.001
1E-006
1E-005
0.0001
0.001
t1, Rectangular Pulse Duration (s)
Fig. 20 - Maximum Transient Thermal Impedance, Junction to Case (DIODE)
Revision: 12-Jun-15
Document Number: 93653
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Driver
L
+ VCC
-
D.U.T.
0
D +
C -
1K
900 V
D.U.T.
Fig. 21 - Gate Charge Circuit (Turn-Off)
Fig. 23 - S.C. SOA Circuit
L
Diode clamp/
D.U.T.
+
-
80 V
L
+
-
-5V
D.U.T.
D.U.T./
Driver
1000 V
Rg
+
VCC
Rg
Fig. 22 - RBSOA Circuit
Fig. 24 - Switching Loss Circuit
R=
VCC
ICM
D.U.T.
+
VCC
Rg
Fig. 25 - Resistive Load Circuit
Revision: 12-Jun-15
Document Number: 93653
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ORDERING INFORMATION TABLE
Device code
VS-
G
B
50
Y
F
120
N
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Insulated gate bipolar transistor (IGBT)
3
-
B = IGBT Generation 5 NPT
4
-
Current rating (50 = 50 A)
5
-
Circuit configuration (Y = Fourpack)
6
-
Package indicator (F = ECONO2)
7
-
Voltage rating (120 = 1200 V)
8
-
Speed/type (N = Ultrafast with reduced diode, speed 8 kHz to 60 kHz)
CIRCUIT CONFIGURATION
21 22
48 49
QB1
QB3
40
28
29
41
5
6
7
QB2
QB4
36
32
37
33
46 47
15
16
17
23 24
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95539
Revision: 12-Jun-15
Document Number: 93653
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Outline Dimensions
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Vishay Semiconductors
ECONO2 4PACK N Series
DIMENSIONS in millimeters
Y2:1
1
Z2:1
0.85
0.6
0.5
1.15 -- 0.02
0.06
0.8 ± 0.03
Ø 6 (x 4)
Ø 4.5
Ø 2.2
13.2 ± 0.15
105 ± 0.1
see note (1)
1.15 -- 0.02
0.06
+ 10
20.5 - 0.5
Ø 2.6
Y
7.5
Z
1.5
17 ± 0.5
X2:1
Ø 5.5 ± 0.05
5 6 7
7.62 7.62
11.43 11.43
21 ± 0.03
21 22
49 48
10.5
45.4 ± 0.2
23 24
29 28
47 46
33 32
42 ± 0.15
37 36
41 40
21 ± 0.03
22.86
19.05
22.86
7.62 11.43
7.62
3.81
0.8 ± 0.03
15 16 17
11.43
15.24
19.05
22.86
19.05
7.5 - 0.3
26.67
39.49
39.49
93 ± 0.15
107.8 ± 0.2
Revision: 21-Mar-13
Document Number: 95539
1
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
1
Document Number: 91000