VISHAY SD603C10S10C

SD603C..C Series
Vishay High Power Products
Fast Recovery Diodes
(Hockey PUK Version), 600 A
FEATURES
• High power FAST recovery diode series
• 1.0 to 2.0 µs recovery time
RoHS
COMPLIANT
• High voltage ratings up to 2200 V
• High current capability
• Optimized turn-on and turn-off characteristics
B-43
• Low forward recovery
• Fast and soft reverse recovery
• Press PUK encapsulation
• Case style conform to JEDEC B-43
• Maximum junction temperature 125 °C
• Lead (Pb)-free
PRODUCT SUMMARY
IF(AV)
600 A
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
IF(AV)
IF(RMS)
IFSM
I2 t
VRRM
trr
TJ
Document Number: 93178
Revision: 04-Aug-08
TEST CONDITIONS
Ths
Ths
VALUES
UNITS
600
A
55
°C
942
A
25
°C
50 Hz
8320
60 Hz
8715
A
50 Hz
346
60 Hz
316
Range
400 to 2200
V
1.0 to 2.0
µs
TJ
25
- 40 to 125
For technical questions, contact: [email protected]
kA2s
°C
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SD603C..C Series
Vishay High Power Products
Fast Recovery Diodes
(Hockey PUK Version), 600 A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK VOLTAGE
V
04
400
500
08
800
900
10
1000
1100
12
1200
1300
14
1400
1500
16
1600
1700
20
2000
2100
22
2200
2300
SD603C..S10C
SD603C..S15C
SD603C..S20C
IRRM MAXIMUM
AT TJ = 125 °C
mA
45
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at heatsink temperature
TEST CONDITIONS
180° conduction, half sine wave
Double side (single side) cooled
IF(AV)
Maximum RMS current
IF(RMS)
Maximum peak, one-cycle
non-repetitive forward current
942
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum
I2√t
for fusing
7000
100 % VRRM
reapplied
7330
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
reapplied
346
316
224
t = 0.1 to 10 ms, no voltage reapplied
3460
VF(TO)1
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
1.36
High level value of threshold voltage
VF(TO)2
(I > π x IF(AV)), TJ = TJ maximum
1.81
Low level of forward slope resistance
rf1
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
0.87
High level of forward slope resistance
rf2
(I > π x IF(AV)), TJ = TJ maximum
0.67
Ipk = 1885 A, TJ = 25 °C; tp = 10 ms sinusoidal wave
2.97
VFM
kA2s
245
Low level value of threshold voltage
Maximum forward voltage drop
A
8715
100 % VRRM
reapplied
t = 8.3 ms
I2√t
°C
8320
t = 10 ms
I2t
A
55 (75)
t = 10 ms
No voltage
reapplied
UNITS
600 (300)
25 °C heatsink temperature double side cooled
t = 8.3 ms
IFSM
Maximum I2t for fusing
VALUES
kA2√s
V
mΩ
V
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT TJ = 25 °C
CODE
trr AT 25 % IRRM
(µs)
S10
1.0
S15
1.5
S20
2.0
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TYPICAL VALUES
AT TJ = 125 °C
TEST CONDITIONS
Ipk
SQUARE
PULSE
(A)
1000
dI/dt
(A/µs)
25
Vr
(V)
- 30
trr AT 25 % IRRM
(µs)
Qrr
(µC)
Irr
(A)
2.0
45
34
3.2
87
51
3.5
97
55
For technical questions, contact: [email protected]
IFM
dir
dt
trr
t
Qrr
IRM(REC)
Document Number: 93178
Revision: 04-Aug-08
SD603C..C Series
Fast Recovery Diodes
Vishay High Power Products
(Hockey PUK Version), 600 A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum operating junction
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
TEST CONDITIONS
VALUES
TJ
- 40 to 125
TStg
- 40 to 150
UNITS
°C
RthJ-hs
DC operation single side cooled
0.076
DC operation double side cooled
0.038
K/W
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
9800 (1000)
N (kg)
83
g
B-43
ΔRthJ-hs CONDUCTION
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
CONDUCTION ANGLE
SINGLE SIDE
DOUBLE SIDE
SINGLE SIDE
DOUBLE SIDE
180°
0.006
0.007
0.005
0.005
120°
0.008
0.008
0.008
0.008
90°
0.010
0.010
0.011
0.011
60°
0.015
0.015
0.016
0.015
30°
0.026
0.025
0.026
0.025
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Document Number: 93178
Revision: 04-Aug-08
For technical questions, contact: [email protected]
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SD603C..C Series
SD603C..C Series
(Single Side Cooled)
RthJ-hs (DC) = 0.076 K/ W
120
110
Conduction Angle
100
90
80
60°
30°
180°
90°
120°
70
0
50
100
150
200
250
300
350
130
SD603C..C Series
(Double Side Cooled)
RthJ-hs (DC) = 0.038 K/ W
120
110
100
Conduction Period
90
80
30°
70
60°
90°
120°
60
180°
50
DC
40
0
200
400
600
800
1000
Average Forward Current (A)
Fig. 4 - Current Ratings Characteristics
SD603C..C Series
(Single Side Cooled)
RthJ-hs (DC) = 0.076 K/ W
120
110
100
Conduction Period
90
30°
80
60°
90°
120°
70
180°
DC
60
0
100
200
300
400
Maximum Average Forward Power Loss (W)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
130
1800
180°
120°
90°
60°
30°
1600
1400
1200
RMS Limit
1000
800
600
Conduction Angle
400
SD603C..C Series
TJ = 125°C
200
0
0
500
100
200
300
400
500
600
Average Forward Current (A)
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Forward Power Loss Characteristics
130
SD603C..C Series
(Double Side Cooled)
R thJ-hs(DC) = 0.038 K/ W
120
110
100
Conduction Angle
90
80
70
30°
60° 90°
60
120°
180°
50
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Maximum Allowable Heatsink Temperature (°C)
130
Fast Recovery Diodes
(Hockey PUK Version), 600 A
0
100 200
300
400
500
600
700
Maximum Average Forward Power Loss (W)
Maximum Allowable Heatsink Temperature (°C)
Maximum Allowable Heatsink Temperature (°C)
Maximum Allowable Heatsink Temperat ure (°C)
Vishay High Power Products
2500
DC
180°
120°
90°
60°
30°
2000
1500
1000
RMS Limit
Conduc tion Period
SD603C..C Series
TJ = 125°C
500
0
0
200
400
600
800
1000
Average Forward Current (A)
Average Forward Current (A)
Fig. 3 - Current Ratings Characteristics
Fig. 6 - Forward Power Loss Characteristics
For technical questions, contact: [email protected]
Document Number: 93178
Revision: 04-Aug-08
SD603C..C Series
Fast Recovery Diodes
Vishay High Power Products
(Hockey PUK Version), 600 A
Peak Half Sine Wave Forward Current (A)
8000
10000
At Any Rated Load Condition and With
Rated VRRM Applied Following Surge.
Initial TJ = 125°C
7000
@60 Hz 0.0083 s
6500
@50 Hz 0.0100 s
6000
Instantaneous Forward Current (A)
7500
5500
5000
4500
4000
3500
SD603C..C Series
3000
1000
TJ = 25 °C
TJ = 125 °C
100
SD603C..C Series
2500
10
1
10
.5
100
1.5
Number of Equa l Amplitude Ha lf Cyc le Current Pulses (N)
8000
7000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial TJ = 125 °C
No Voltage Reapplied
Rated VRRMReapplied
6000
5000
4000
3000
SD603C..C Series
2000
0.01
0.1
3.5
4.5
5.5
6.5
7.5
8.5
Fig. 9 - Forward Voltage Drop Characteristics
Transient Thermal Impedance Z thJ-hs (K/ W)
Peak Half Sine Wave Forward Current (A)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
9000
2.5
Instantaneous Forward Voltage (V)
1
0.1
SD603C..C Series
0.01
Stead y State Va lue :
RthJ-hs= 0.076 K/ W
(Single Side Cooled)
RthJ-hs= 0.038 K/ W
(Double Side Cooled)
(DC Operation)
0.001
0.001
Pulse Train Duration (s)
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
100
V
FP
Forward Rec overy (V)
80
I
TJ = 125°C
60
TJ = 25°C
40
20
SD603C..S20C Series
0
0
200
400
600
800
1000
1200
1400
1600
1800
2000
Rate Off Rise Of Forward Current di/ d t (A/ usec)
Fig. 11 - Typical Forward Recovery Characteristics
Document Number: 93178
Revision: 04-Aug-08
For technical questions, contact: [email protected]
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SD603C..C Series
2.1
Maximum Reverse Recovery Time - Trr (µs)
2.2
Fast Recovery Diodes
(Hockey PUK Version), 600 A
SD603C..S10C Series
TJ = 125 °C; V r = 30V
I FM = 1000 A
Square Pulse
2
1.9
500 A
1.8
250 A
1.7
1.6
10
SD603C..S15C Series
TJ= 125 °C; V r = 30V
3.5
I FM = 1000 A
Square Pulse
3
500 A
2.5
250 A
2
10
100
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Rate Of Fall Of Forward Current - di/d t (A/ µs)
Fig. 12 - Recovery Time Characteristics
Fig. 15 - Recovery Time Characteristics
Maximum Reverse Recovery Charge - Qrr (µC)
100
4
Maximum Reverse Rec overy Charge - Qrr (µC)
Maximum Reverse Recovery Time - Trr (µs)
Vishay High Power Products
I FM = 1000 A
120
Square Pulse
110
100
500 A
90
80
250 A
70
60
50
40
30
SD603C..S10C Series
TJ = 125 °C; V r = 30V
20
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Maximum Reverse Rec overy Current - Irr (A)
Fig. 13 - Recovery Charge Characteristics
120
110
100
90
80
I FM = 1000 A
Square Pulse
500 A
250 A
70
60
50
40
30
20
SD603C..S10C Series
TJ = 125 °C; V r = 30V
10
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 14 - Recovery Current Characteristics
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200
180
I FM = 1000 A
Square Pulse
160
140
500 A
120
100
250 A
80
60
SD603C..S15C Series
TJ= 125 °C; V r = 30V
40
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 16 - Recovery Charge Characteristics
Maximum Reverse Recovery Current - Irr (A)
130
140
130
120
I FM = 1000 A
Square Pulse
110
100
500 A
90
80
250 A
70
60
50
40
30
SD603C..S15C Series
TJ= 125 °C; V r = 30V
20
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/ dt (A/µs)
Fig. 17 - Recovery Current Characteristics
For technical questions, contact: [email protected]
Document Number: 93178
Revision: 04-Aug-08
SD603C..C Series
Maximum Reverse Recovery Charge - Qrr (µC)
Maximum Reverse Rec overy Time - Trr (µs)
Fast Recovery Diodes
Vishay High Power Products
(Hockey PUK Version), 600 A
4.5
SD603C..S20C Series
TJ= 125 °C; V r = 30V
4
I FM = 1000 A
3.5
Sq uare Pulse
3
500 A
2.5
250 A
2
10
100
200
I FM = 1000 A
180
Sq uare Pulse
160
140
500 A
120
100
250 A
80
SD603C..S20C Series
TJ = 125 °C; V r = 30V
60
40
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/dt (A/ µs)
Rate Of Fa ll Of Forward Current - di/ dt (A/ µs)
Maximum Reverse Recovery Current - Irr (A)
Fig. 18 - Recovery Time Characteristics
Fig. 19 - Recovery Charge Characteristics
150
140
IFM = 1000 A
130
Square Pulse
120
110
100
500 A
90
80
250 A
70
60
50
SD603C..S20C Series
TJ= 125 °C; V r = 30V
40
30
20
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 20 - Recovery Current Characteristics
1E4
10
20 joules per pulse
20 joules per pulse
10
Peak Forward Current (A)
4
1
4
2
2
1
0.4
1E3
0.4
0.2
0.1
0.2
0.04
0.1
0.02
1E2
0.01
tp
1E1
1E1
SD603C..S10C Series
Sinusoidal Pulse
TJ = 125°C, VRRM = 1120V
dv/ dt = 1000V/ µs
1E2
tp
1E3
Pulse Basewidth (µs)
1E4
1E1
SD603C..S10C Series
Trapezoidal Pulse
TJ = 125°C, VRRM = 1120V
d v/ dt = 1000V/ µs; di/ dt=50A/ µs
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics
Document Number: 93178
Revision: 04-Aug-08
For technical questions, contact: [email protected]
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SD603C..C Series
Vishay High Power Products
Fast Recovery Diodes
(Hockey PUK Version), 600 A
1E4
20 joules per pulse
20 joules p er p ulse
Peak Forward Current (A)
10
10
4
2
4
1
1E3
2
0.4
1
0.2
0.4
0.1
0.04
0.2
0.02
1E2
tp
1E1
1E1
SD603C..S15C Series
Sinusoid al Pulse
TJ= 125°C, VRRM = 1760V
d v/ dt = 1000V/ µs
1E2
tp
1E3
1E4
SD603C..S15C Series
Trapezoidal Pulse
TJ = 125°C, VRRM = 1760V
d v/ dt = 1000V/ µs; di/ dt=50A/ µs
1E1
1E2
1E3
1E4
Pulse Basewid th (µs)
Pulse Basewidth (µs)
Fig. 22 - Maximum Total Energy Loss Per Pulse Characteristics
1E4
20 joules per pulse
20 joules per pulse
Peak Forward Current (A)
10
10
4
4
2
2
1E3
1
1
0.4
0.4
0.2
0.1
1E2
0.04
tp
1E1
1E1
SD603C..S20C Series
Sinusoidal Pulse
TJ = 125°C, VRRM = 1760V
dv/ dt = 1000V/ µs
1E2
1E3
tp
1E4
SD603C..S20C Series
Trapezoidal Pulse
TJ = 125°C, VRRM = 1760V
dv/ dt = 1000V/ µs; di/ d t=50A/ µs
1E1
Pulse Basewidth (µs)
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 23 - Maximum Total Energy Loss Per Pulse Characteristics
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For technical questions, contact: [email protected]
Document Number: 93178
Revision: 04-Aug-08
SD603C..C Series
Fast Recovery Diodes
Vishay High Power Products
(Hockey PUK Version), 600 A
ORDERING INFORMATION TABLE
Device code
SD
60
3
C
22
S20
C
1
2
3
4
5
6
7
1
-
Diode
2
-
Essential part number
3
-
3 = Fast recovery
4
-
C = Ceramic PUK
5
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
6
-
trr code (see Recovery Characteristics table)
7
-
C = PUK case B-43
LINKS TO RELATED DOCUMENTS
Dimensions
Document Number: 93178
Revision: 04-Aug-08
http://www.vishay.com/doc?95249
For technical questions, contact: [email protected]
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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