VISHAY SI1024X-T1-GE3

Si1024X
Vishay Siliconix
Dual N-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
20
• Halogen-free Option Available
RDS(on) (Ω)
ID (mA)
0.70 at VGS = 4.5 V
600
• TrenchFET® Power MOSFET: 1.8 V Rated
0.85 at VGS = 2.5 V
500
• Very Small Footprint
1.25 at VGS = 1.8 V
RoHS
COMPLIANT
• High-Side Switching
350
• Low On-Resistance: 0.7 Ω
• Low Threshold: 0.8 V (typ.)
• Fast Switching Speed: 10 ns
• 1.8 V Operation
• Gate-Source ESD Protected: 2000 V
SOT-563
SC-89
S1
1
BENEFITS
6
D1
5
G2
• Ease in Driving Switches
100
G1
2
Marking Code: C
• Low-Voltage Operation
100
D2
3
4
• Low Offset (Error) Voltage
• High-Speed Circuits
S2
• Low Battery Voltage Operation
Top View
APPLICATIONS
Ordering Information: Si1024X-T1-E3 (Lead (Pb)-free)
Si1024X-T1-GE3 (Lead (Pb)-free and Halogen-free)
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
• Battery Operated Systems
• Power Supply Converter Circuits
• Load/Power Switching Cell Phones, Pagers
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
±6
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain
TA = 25 °C
TA = 85 °C
Currentb
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
515
IS
TA = 25 °C
TA = 85 °C
PD
V
485
370
IDM
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
ID
Unit
350
650
450
380
280
250
145
130
mA
mW
TJ, Tstg
- 55 to 150
°C
ESD
2000
V
Notes:
a. Surface Mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71170
S-80643-Rev. C, 24-Mar-08
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Si1024X
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
0.45
Typ.
Max.
Unit
Static
VGS(th)
VDS = VGS, ID = 250 µA
0.9
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 4.5 V
± 0.5
± 1.0
µA
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
0.3
100
nA
5
µA
On-State Drain Currenta
ID(on)
Gate Threshold Voltage
Drain-Source On-State
VDS = 5 V, VGS = 4.5 V
mA
0.41
0.70
VGS = 2.5 V, ID = 500 mA
0.53
0.85
VGS = 1.8 V, ID = 350 mA
0.70
1.25
gfs
VDS = 10 V, ID = 400 mA
1.0
VSD
IS = 150 mA, VGS = 0 V
0.8
Forward Transconductancea
a
700
VGS = 4.5 V, ID = 600 mA
RDS(on)
Resistancea
Diode Forward Voltage
VDS = 20 V, VGS = 0 V, TJ = 85 °C
Ω
S
1.2
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Time
td(on)
Turn-Off Time
td(off)
750
VDS = 10 V, VGS = 4.5 V, ID = 250 mA
pC
75
225
VDD = 10 V, RL = 47 Ω
ID ≅ 200 mA, VGEN = 4.5 V, RG = 10 Ω
10
ns
36
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
1.0
1200
TC = - 55 °C
VGS = 5 thru 1.8 V
1000
I D - Drain Current (mA)
I D - Drain Current (A)
0.8
0.6
0.4
0.2
25 °C
800
125 °C
600
400
200
1V
0.0
0.0
0.5
1.0
1.5
2.0
V DS - Drain-to-Source Voltage (V)
Output Characteristics
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2.5
3.0
0
0.0
0.5
1.0
1.5
2.0
2.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 71170
S-80643-Rev. C, 24-Mar-08
Si1024X
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
100
4.0
80
3.2
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
VGS = 0 V
f = 1 MHz
2.4
1.6
VGS = 1.8 V
0.8
Ciss
60
40
Coss
20
VGS = 2.5 V
VGS = 4.5 V
Crss
0
0.0
0
200
400
600
800
0
1000
4
8
16
20
VDS - Drain-to-Source Voltage (V)
I D - Drain Current (mA)
On-Resistance vs. Drain Current
Capacitance
5
1.60
VDS = 10 V
ID = 250 mA
4
1.40
R DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
12
3
2
1
VGS = 4.5 V
ID = 600 mA
1.20
VGS = 1.8 V
ID = 350 mA
1.00
0.80
0
0.0
0.2
0.4
0.6
0.60
- 50
0.8
- 25
Q g - Total Gate Charge (nC)
0
25
50
75
100
125
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
1000
5
R DS(on) - On-Resistance (Ω)
I S - Source Current (mA)
TJ = 125 °C
100
TJ = 25 °C
TJ = - 55 °C
10
1
0.0
4
ID = 350 mA
3
ID = 200 mA
2
1
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 71170
S-80643-Rev. C, 24-Mar-08
1.4
0
1
2
3
4
5
6
V GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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Si1024X
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
3.0
0.3
2.5
ID = 0.25 mA
2.0
0.1
I GSS - (μA)
V GS(th) Variance (V)
0.2
0.0
1.5
- 0.1
1.0
- 0.2
0.5
VGS = 4.5 V
- 0.3
- 50
- 25
0
25
50
75
100
0.0
- 50
125
- 25
0
50
75
100
125
TJ - Temperature (°C)
TJ - Temperature (°C)
Threshold Voltage Variance vs. Temperature
BVGSS - Gate-to-Source Breakdown Voltage (V)
25
IGSS vs. Temperature
7
6
5
4
3
2
1
0
- 50
- 25
0
25
50
75
100
125
TJ - Temperature (°C)
BVGSS vs. Temperature
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 500 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?71170.
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Document Number: 71170
S-80643-Rev. C, 24-Mar-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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