Si2302CDS Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.057 at VGS = 4.5 V 2.9 0.075 at VGS = 2.5 V 2.6 Qg (Typ.) 3.5 • Halogen-free Option Available • TrenchFET® Power MOSFET RoHS APPLICATIONS COMPLIANT • Load Switching for Portable Devices • DC/DC Converter TO-236 (SOT-23) G 1 3 S D 2 Top View Si2302CDS (N2)* * Marking Code Ordering Information: Si2302CDS-T1-E3 (Lead (Pb)-free) Si2302CDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current TA = 25 °C TA = 70 °C b IS TA = 25 °C TA = 70 °C PD 2.9 2.6 2.1 10 0.72 A 0.6 0.86 0.71 0.55 0.46 TJ, Tstg Operating Junction and Storage Temperature Range V 2.3 IDM Continuous Source Current (Diode Conduction)a Power Dissipationa ID Unit - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot Symbol t≤5s Steady State Steady State RthJA RthJF Typical Maximum 120 145 140 175 62 78 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 68645 S-81007-Rev. A, 05-May-08 www.vishay.com 1 Si2302CDS Vishay Siliconix SPECIFICATIONS TA = 25 °C, unless otherwise noted Limits Parameter Symbol Test Conditions Min. Typ. Unit Max. Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage VDS VGS = 0 V, ID = 250 µA 20 VGS(th) VDS = VGS, ID = 250 µA 0.40 IGSS VDS = 0 V, VGS = ± 8 V ± 100 VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 70 °C 75 Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-Resistancea VDS ≥ 10 V, VGS = 4.5 V Forward Transconductancea Diode Forward Voltage nA µA 6 A VGS = 4.5 V, ID = 3.6 A 0.045 0.057 VGS = 2.5 V, ID = 3.1 A 0.056 0.075 gfs VDS = 5 V, ID = 3.6 A 13 VSD IS = 0.95 A, VGS = 0 V 0.7 1.2 3.5 5.5 RDS(on) V 0.85 Ω S V Dynamicb Qg Total Gate Charge Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg VDS = 10 V, VGS = 4.5 V, ID = 3.6 A nC 0.6 0.45 f = 1.0 MHz 2.0 4.0 8.0 8 15 7 15 30 45 7 15 8.5 15 2.0 4.0 Ω Switching td(on) Turn-On Delay Time VDD = 10 V, RL = 2.78 Ω ID ≅ 3.6 A, VGEN = 4.5 V, Rg = 1 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IF = 3.6 A, dI/dt = 100 A/µs ns nC Notes: a. Pulse test: Pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 10 VGS = 5 thru 2 V 8 VGS = 1.5 V I D - Drain Current (A) I D - Drain Current (A) 8 6 4 2 6 4 TC = 25 °C 2 VGS = 1 V TC = 125 °C TC = - 55 °C 0 0.0 www.vishay.com 2 0.5 1.0 1.5 2.0 0 0.0 0.4 0.8 1.2 1.6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.0 Document Number: 68645 S-81007-Rev. A, 05-May-08 Si2302CDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 0.070 R DS(on) - On-Resistance (Ω) I D - Drain Current (A) 1.6 1.2 0.8 TC = 25 °C 0.4 0.060 VGS = 2.5 V 0.050 VGS = 4.5 V 0.040 TC = 125 °C TC = - 55 °C 0.0 0.0 0.3 0.6 0.9 1.2 0.030 1.5 0 2 4 VGS - Gate-to-Source Voltage (V) 8 10 ID - Drain Current (A) Transfer Characteristics On-Resistance vs. Drain Current 400 5 ID = 3.6 A VGS - Gate-to-Source Voltage (V) Ciss 320 C - Capacitance (pF) 6 240 160 Coss 80 VDS = 10 V 4 VDS = 15 V 3 VDS = 5 V 2 1 Crss 0 0 0 5 10 15 20 0 1 2 3 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge 4 100 1.6 VGS = 2.5 V, ID = 3.1 A 10 1.2 VGS = 4.5 V, ID = 3.6 A 1.0 0.8 0.6 - 50 I S - Source Current (A) (Normalized) R DS(on) - On-Resistance 1.4 TJ = 150 °C 1 0.1 TJ = 25 °C 0.01 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 68645 S-81007-Rev. A, 05-May-08 150 0.001 0.0 TJ = - 55 °C 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage www.vishay.com 3 Si2302CDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.2 0.12 R DS(on) - On-Resistance (Ω) 0.1 VGS(th) Variance (V) 0.10 0.08 TJ = 125 °C 0.0 - 0.1 ID = 1 mA 0.06 - 0.2 ID = 250 µA TJ = 25 °C - 0.3 - 50 0.04 0 1 2 3 4 5 - 25 0 25 50 75 VGS - Gate-to-Source Voltage (V) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage 10 Limited by RDS(on)* 10 125 150 100 µs 8 1 ms I D - Drain Current (A) Power (W) 100 6 4 1 10 ms 100 ms 0.1 1s 10 s 100 s, DC TA = 25 °C Single Pulse 2 TA = 25 °C BVDSS Limited 0 0.01 0.1 1 10 100 1000 0.01 0.1 Time (s) Single Pulse Power 100 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 70 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68645. www.vishay.com 4 Document Number: 68645 S-81007-Rev. A, 05-May-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1