Si1012R/X Vishay Siliconix N-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 20 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 D D D D D D SC-75A or SC-89 G S Pb-free Available BENEFITS D D D D D 1 3 TrenchFETr Power MOSFET: 1.8-V Rated Gate-Source ESD Protected: 2000 V High-Side Switching Low On-Resistance: 0.7 W Low Threshold: 0.8 V (typ) Fast Switching Speed: 10 ns D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation 2 APPLICATIONS Top View ORDERING INFORMATION Part Number Package Marking Code Si1012R-T1 Si1012R-T1—E3 (Lead (Pb)-Free) SC−75A (SOT-416) C Si1012X-T1 Si1012X-T1—E3 (Lead (Pb)-Free) SC-89 (SOT-490) A D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories D Battery Operated Systems D Power Supply Converter Circuits D Load/Power Switching Cell Phones, Pagers ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS "6 Continuous Drain Current (TJ = 150_C)b Pulsed Drain TA = 25_C TA = 85_C Currenta Maximum Power Dissipationb for SC-75 SC 75 Maximum Power for SC-89 SC 89 Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) IS V 600 500 400 350 IDM Continuous Source Current (diode conduction)b Dissipationb ID 1000 275 250 TA = 25_C 175 150 TA = 85_C 90 80 275 250 TA = 25_C PD 160 TA = 85_C Unit mA mW 140 TJ, Tstg −55 to 150 _C ESD 2000 V Notes d. Pulse width limited by maximum junction temperature. e. Surface Mounted on FR4 Board. Document Number: 71166 S-50366—Rev. B, 28-Feb-05 www.vishay.com 1 Si1012R/X Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 0.45 Typ Max Unit 0.9 V "0.5 "1.0 mA 0.3 100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VDS = 0 V, VGS = "4.5 V VDS = 20 V, VGS = 0 V 5 VDS = 20 V, VGS = 0 V, TJ = 85_C VDS = 5 V, VGS = 4.5 V 700 VGS = 4.5 V, ID = 600 mA 0.41 0.70 VGS = 2.5 V, ID = 500 m A 0.53 0.85 VGS = 1.8 V, ID = 350 m A 0.70 1.25 gfs VDS = 10 V, ID = 400 mA 1.0 VSD IS = 150 mA, VGS = 0 V 0.8 rDS(on) mA mA W S 1.2 V Dynamicb Total Gate Charge Qg 750 VDS = 10 V, VGS = 4.5 V, ID = 250 mA pC Gate-Source Charge Qgs Gate-Drain Charge Qgd 225 Turn-On Delay Time td(on) 5 Rise Time Turn-Off Delay Time Fall Time tr td(off) tf VDD = 10 V, RL = 47 W ID ^ 200 mA, VGEN = 4.5 V, RG = 10 W 75 5 25 ns 11 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71166 S-50366—Rev. B, 28-Feb-05 Si1012R/X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 1.0 1200 TC = −55_C 1000 VGS = 5 thru 1.8 V ID - Drain Current (mA) I D − Drain Current (A) 0.8 0.6 0.4 0.2 25_C 800 125_C 600 400 200 1V 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.5 VDS − Drain-to-Source Voltage (V) 1.0 3.2 80 2.4 1.6 VGS = 1.8 V VGS = 4.5 V 200 400 600 800 Ciss 60 40 Coss 20 VGS = 2.5 V 0 Crss 0 1000 0 4 ID − Drain Current (mA) Gate Charge 12 16 20 On-Resistance vs. Junction Temperature 1.60 VDS = 10 V ID = 250 mA rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 8 VDS − Drain-to-Source Voltage (V) 5 4 3 2 1 0 0.0 2.5 Capacitance 100 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) On-Resistance vs. Drain Current 0.0 2.0 VGS − Gate-to-Source Voltage (V) 4.0 0.8 1.5 1.40 VGS = 4.5 V ID = 600 mA 1.20 VGS = 1.8 V ID = 350 mA 1.00 0.80 0.2 0.4 0.6 Qg − Total Gate Charge (nC) Document Number: 71166 S-50366—Rev. B, 28-Feb-05 0.8 0.60 −50 −25 0 25 50 75 100 125 TJ − Junction Temperature (_C) www.vishay.com 3 Si1012R/X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 5 1000 100 TJ = 25_C TJ = −55_C 10 1 0.0 4 r DS(on) − On-Resistance ( W ) I S − Source Current (mA) TJ = 125_C ID = 350 mA 3 ID = 200 mA 2 1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 1 VSD − Source-to-Drain Voltage (V) Threshold Voltage Variance vs. Temperature 3 4 5 6 IGSS vs. Temperature 0.3 3.0 0.2 2.5 ID = 0.25 mA 0.1 2.0 IGSS − (mA) V GS(th) Variance (V) 2 VGS − Gate-to-Source Voltage (V) −0.0 1.5 −0.1 1.0 −0.2 0.5 VGS = 4.5 V −0.3 −50 −25 0 25 50 75 100 0.0 −50 125 −25 TJ − Temperature (_C) 0 25 50 75 100 125 TJ − Temperature (_C) BVGSS − Gate-to-Source Breakdown Voltage (V) BVGSS vs. Temperature 7 6 5 4 3 2 1 0 −50 −25 0 25 50 75 100 125 TJ − Temperature (_C) www.vishay.com 4 Document Number: 71166 S-50366—Rev. B, 28-Feb-05 Si1012R/X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 833_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71166.. Document Number: 71166 S-50366—Rev. B, 28-Feb-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1