Si3475DV Vishay Siliconix New Product P-Channel 200-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 rDS(on) (Ω) ID (A)a 1.61 at VGS = - 10 V - 0.95 1.65 at VGS = - 6 V - 0.93 • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) 8 nC RoHS APPLICATIONS COMPLIANT • Active Clamp Circuits in DC/DC Power Supplies TSOP-6 Top View S D 1 6 D 3 mm D 2 5 D G Marking Code G 3 4 AI S XXX Lot Traceability and Date Code Part # Code 2.85 mm D Ordering Information: Si3475DV-T1-E3 (Lead (Pb)-free P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit - 200 ± 20 - 0.95a - 0.77 ID IDM Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD V - 0.75b,c - 0.59b,c -3 - 2.6 A 1.6b,c 3 0.45 3.2 2.1 mJ 2b,c 1.25b,c - 55 to 150 TJ, Tstg Operating Junction and Storage Temperature Range Unit W °C THERMAL RESISTANCE RATINGS Parameter b, d Maximum Junction-to-Ambient Maximum Junction-to-Foot t ≤ 5 sec Steady State Symbol RthJA RthJF Typical 51 32 Maximum 62.5 39 Unit °C/W Notes: a. TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 sec. d. Maximum under Steady State conditions is 110 °C/W. Document Number: 74249 S-62239–Rev. A, 06-Nov-06 www.vishay.com 1 Si3475DV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min VDS VGS = 0 V, ID = - 250 µA - 200 Typ Max Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = - 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea rDS(on) gfs Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time tr mV/°C 6.2 -2 -4 V ± 100 nA VDS = - 200 V, VGS = 0 V -1 VDS = - 200 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≥ - 10 V, VGS = - 10 V VGS = - 10 V, ID = - 0.9 A -2 1.61 VGS = - 6 V, ID = - 0.7 A 1.37 1.65 VDS = - 10 V, ID = - 0.9 A 3.5 500 VDS = - 50 V, VGS = 0 V, f = 1 MHz 26 pF 18 VDS = - 100 V, VGS = - 10 V, ID = - 1 A VDS = - 100 V, VGS = - 6 V, ID = - 1 A 11.7 18 7.8 12 2 nC 3.7 f = 1 MHz VDD = - 100 V, RL = 100 Ω ID ≅ - 1 A, VGEN = - 10 V, Rg = 1 Ω 9 14 9 14 11 18 28 42 tf 12 18 14 21 tr Ω S td(on) td(off) µA A 1.34 td(on) td(off) V - 240 VDD = - 100 V, RL = 100 Ω ID ≅ - 1 A, VGEN = - 6 V, Rg = 1 Ω tf 29 44 23 35 14 21 Ω ns Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage IS TC = 25 °C - 0.95 ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb -3 IS = - 1 A, VGS = 0 V IF = - 1.2 A, di/dt = 100 A/µs, TJ = 25 °C A - 0.81 - 1.2 V 84 130 ns 235 350 nC 46 38 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74249 S-62239–Rev. A, 06-Nov-06 Si3475DV Vishay Siliconix 25 °C, unless otherwise noted 5 1.5 4 1.2 I D – Drain Current (A) I D – Drain Current (A) TYPICAL CHARACTERISTICS VGS = 10 thru 3 2 1 0.9 TC = 125 °C 0.6 TC = 25 °C 0.3 4V TC = - 55 °C 0 0.0 0 2 4 6 8 10 0 2 VDS – Drain-to-Source Voltage (V) 1.80 600 C – Capacitance (pF) rDS(on) – On-Resistance (Ω) 750 VGS = 6 V 1.40 VGS = 10 V 300 150 1.00 0 2 3 4 Ciss 450 1.20 1 5 Coss Crss 0 4 ID – Drain Current (A) 8 12 16 20 VDS – Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 2.4 ID = 1 A ID = 1 A VDS = 100 V 8 2.0 rDS(on) – On-Resistance (Normalized) V GS – Gate-to-Source Voltage (V) 8 Transfer Characteristics 2.00 0 6 VGS – Gate-to-Source Voltage (V) Output Characteristics 1.60 4 VDS = 75 V 6 VDS = 125 V 4 2 0 0.0 VGS = 10 V 1.6 VGS = 6 V 1.2 0.8 2.5 5.0 7.5 10.0 12.5 0.4 - 50 - 25 0 25 50 75 100 125 Qg – Total Gate Charge (nC) TJ – Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 74249 S-62239–Rev. A, 06-Nov-06 150 www.vishay.com 3 Si3475DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 6.0 4.8 rDS(on) – Drain-to-Source (Ω) I S - Source Current (A) 10 TJ = 150 °C 1 TJ = 25 °C 0.10 3.6 TA = 125 °C 2.4 1.2 0.0 0.01 0 0.3 0.6 0.9 1.2 0 1.5 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.8 60 0.6 48 Power (W) ID = 5 µA 0.4 VGS(th) (V) TA = 25 °C 0.2 ID = 5 mA 36 24 0.0 12 - 0.2 - 0.4 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.001 TJ – Temperature (°C) 0.1 1 10 Time (sec) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 I D – Drain Current (A) *Limited by rDS(on) 1 1 ms 10 ms 0.1 100 ms 1s 10 s dc 0.01 0.001 0.1 TA = 25 °C Single Pulse 1000 1 100 10 VDS – Drain-to-Source Voltage (V) *VGS minimum VGS at which rDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 74249 S-62239–Rev. A, 06-Nov-06 Si3475DV Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.1 0.9 Power (W) 0.7 0.4 0.2 0 0 25 50 75 100 125 150 TC – Case Temperature (°C) 4.0 1.5 3.2 1.2 Power (W) Power (W) Current Derating* 2.4 0.9 1.6 0.6 0.8 0.3 0.0 0.0 0 25 50 75 100 TC – Case Temperature (°C) Power, Junction-to-Foot 125 150 0 25 50 75 100 125 150 TC – Case Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74249 S-62239–Rev. A, 06-Nov-06 www.vishay.com 5 Si3475DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 75 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 1 10- 1 Square Wave Pulse Duration (sec) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74249. www.vishay.com 6 Document Number: 74249 S-62239–Rev. A, 06-Nov-06 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1