Si1426DH New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES D TrenchFETr Power MOSFET D Thermally Enhanced SC-70 Package D PWM Optimized PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.075 @ VGS = 10 V 3.6 APPLICATIONS 0.115 @ VGS = 4.5 V 2.9 D Boost Converter in Portable Devices – Low Gate Charge (3 nC) D Low Current Synchronous Rectifier 30 SOT-363 SC-70 (6-LEADS) D 1 6 D D 2 5 D AC G 3 4 XX YY Marking Code Lot Traceability and Date Code S Part # Code Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C) _ a TA = 25_C V 3.6 2.8 2.6 2.1 ID TA = 85_C Pulsed Drain Current IDM Continuous Diode Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa Unit TA = 85_C Operating Junction and Storage Temperature Range PD A 10 1.3 0.8 1.6 1.0 0.8 0.5 TJ, Tstg W _C –55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Steady State Steady State RthJA RthJF Typical Maximum 60 80 100 125 34 45 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71805 S-05803—Rev. A, 18-Feb-02 www.vishay.com 1 Si1426DH New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VDS = VGS, ID = 250 mA 0.80 Typ Max Unit 2.5 V "100 nA Static Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Voltagea VDS = 24 V, VGS = 0 V 1 VDS = 24 V, VGS = 0 V, TJ = 85_C 5 VDS = 5 V, VGS = 10 V m mA 10 A VGS = 10 V, ID = 3.6 A 0.061 0.075 VGS = 4.5 V, ID = 2.0 A 0.092 0.115 gfs VDS = 10 V, ID = 3.6 A 5 VSD IS = 1.3 A, VGS = 0 V 0.78 1.2 1.9 3 VDS = 15 V, VGS = 4.5 V, ID = 3.6 A 0.75 rDS(on) Forward Transconductancea Diode Forward VDS = 0 V, VGS = "20 V W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 0.75 Turn-On Delay Time td(on) 10 15 tr 12 18 15 22 9 15 40 70 Rise Time Turn-Off Delay Time VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery trr IF = 1.4 A. di/dt = 100/ms nC ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 10 10 VGS = 10 thru 5 V 4V 8 I D – Drain Current (A) I D – Drain Current (A) 8 6 4 3V 2 6 4 TC = 125_C 2 25_C –55_C 0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 VDS – Drain-to-Source Voltage (V) www.vishay.com 2 3.5 4.0 0 1 2 3 4 5 VGS – Gate-to-Source Voltage (V) Document Number: 71805 S-05803—Rev. A, 18-Feb-02 Si1426DH New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 250 C – Capacitance (pF) r DS(on) – On-Resistance ( W ) 0.16 0.12 VGS = 4.5 V 0.08 VGS = 10 V 200 Ciss 150 Coss 100 Crss 0.04 50 0.00 0 0 2 4 6 8 10 0 6 ID – Drain Current (A) Gate Charge r DS(on) – On-Resistance (W) (Normalized) V GS – Gate-to-Source Voltage (V) 30 On-Resistance vs. Junction Temperature 8 6 4 2 VGS = 10 V ID = 3.6 A 1.6 1.4 1.2 1.0 0.8 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.6 –50 4.0 –25 0 Qg – Total Gate Charge (nC) 25 50 75 100 125 150 TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.20 r DS(on) – On-Resistance ( W ) 10 I S – Source Current (A) 24 1.8 VDS = 15 V ID = 3.6 A TJ = 150_C 1 TJ = 25_C 0.1 0.0 18 VDS – Drain-to-Source Voltage (V) 10 0 0.0 12 0.16 ID = 1 A ID = 3.6 A 0.12 0.08 0.04 0.00 0.2 0.4 0.6 0.8 1.0 VSD – Source-to-Drain Voltage (V) Document Number: 71805 S-05803—Rev. A, 18-Feb-02 1.2 0 2 4 6 8 10 VGS – Gate-to-Source Voltage (V) www.vishay.com 3 Si1426DH New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Single Pulse Power 30 0.2 25 ID = 250 mA 20 –0.0 Power (W) V GS(th) Variance (V) Threshold Voltage 0.4 –0.2 15 –0.4 10 –0.6 5 –0.8 –50 –25 0 25 50 75 100 125 150 0 0.001 0.01 1 0.1 TJ – Temperature (_C) 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA =100_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 www.vishay.com 4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71805 S-05803—Rev. A, 18-Feb-02 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1