Si2328DS Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 100 0.250 @ VGS = 10 V 1.5 D 100% Rg Tested TO-236 (SOT-23) G 1 3 S D 2 Top View Si2328DS (D8)* *Marking Code Ordering Information: Si2328DS-T1 Si2328DS-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Drain-Source Voltage VDS 100 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA= 25_C TA= 70_C Pulsed Drain Currentb Avalanche Currentb L = 0.1 0 1 mH Single Avalanche Energy Continuous Source Current (Diode Conduction)a TA= 25_C Power Dissipationa TA= 70_C Operating Junction and Storage Temperature Range ID V 1.5 1.15 1.2 0.92 IDM 6 IAS 6 EAS 1.8 IS 0.6 PD A mJ A 1.25 0.73 0.80 0.47 TJ, Tstg Unit −55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot Symbol t v 5 sec Steady State Steady State RthJA RthJF Typical Maximum 80 100 130 170 45 55 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Document Number: 71796 S-41259—Rev. C, 05-Jul-04 www.vishay.com 1 Si2328DS Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min V(BR)DSS VGS = 0 V, ID = 1 mA 100 VGS(th) VDS = VGS, ID = 250 mA 2 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V Zero Gate Voltage Drain Current IDSS Typ Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage 4 "100 VDS = 100 V, VGS = 0 V 1 VDS = 100 V, VGS = 0 V, TJ = 70_C 75 ID(on) VDS w 15 V, VGS = 10 V rDS(on) VGS = 10 V, ID = 1.5 A 6 gfs VDS = 15 V, ID = 1.5 A 4 VSD IS = 1.0 A, VGS = 0 V 0.8 1.2 3.3 4.0 V nA mA A 0.195 0.250 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 0.47 VDS = 50 V, VGS = 10 V, ID = 1.5 A nC 1.45 0.5 2.4 W Switching Turn-On Delay Time Rise Time Turn-Off Delay Time td(on) 7 11 tr 11 17 9 15 VDD = 50 V, RL = 33 W ID ^ 0.2 A, VGEN = 10 V, Rg = 6 W td(off) Fall-Time tf Source-Drain Reverse Recovery Time trr IF = 1.5 A, di/dt = 100 A/ms 10 15 50 100 ns ns Notes a. Pulse test: PW v300 ms duty cycle v2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 12 12 7V VGS = 10, 9, 8 V 9 I D − Drain Current (A) I D − Drain Current (A) 9 6V 6 5V 3 TC = 125_C 3 25_C 3, 2, 1 V −55_C 4V 0 0 0 2 4 6 8 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 6 10 0 2 4 6 8 VGS − Gate-to-Source Voltage (V) Document Number: 71796 S-41259—Rev. C, 05-Jul-04 Si2328DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 250 0.5 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 0.6 0.4 VGS = 10 V 0.3 0.2 200 Ciss 150 100 50 0.1 0.0 Coss Crss 0 0 3 6 9 0 12 20 ID − Drain Current (A) Gate Charge 80 100 On-Resistance vs. Junction Temperature 2.5 VDS = 50 V ID = 1.5 A VGS = 10 V ID = 1.5 A 16 2.0 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 60 VDS − Drain-to-Source Voltage (V) 20 12 8 4 1.5 1.0 0.5 0 0 1 2 3 4 5 0.0 −50 6 −25 0 Qg − Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.6 r DS(on) − On-Resistance ( W ) TJ = 150_C 1 0.1 0.01 0.0 25 TJ − Junction Temperature (_C) 10 I S − Source Current (A) 40 TJ = 25_C 0.5 ID = 1.5 A 0.4 0.3 0.2 0.1 0.0 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) Document Number: 71796 S-41259—Rev. C, 05-Jul-04 1.2 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si2328DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Single Pulse Power 12 0.3 10 ID = 250 mA 0.0 Power (W) V GS(th) Variance (V) Threshold Voltage 0.6 −0.3 8 −0.6 4 −0.9 2 −1.2 −50 TA = 25_C 6 0 −25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600 Time (sec) TJ − Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 176_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71796 S-41259—Rev. C, 05-Jul-04 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. 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