Si7483DP Vishay Siliconix New Product P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) --30 30 rDS(on) (Ω) ID (A) 0.005 @ VGS = --10 V --24 0.0095 @ VGS = --4.5 V --17 D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile APPLICATIONS D Battery and Load Switching -- Notebook Computers -- Notebook Battery Packs PowerPAKt SO-8 S S 6.15 mm 1 2 5.15 mm S 3 G S 4 G D 8 7 D 6 D 5 D D Bottom View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS --30 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID V --24 --14 --19 --11 IDM continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD Unit --60 --4.5 --1.6 5.4 1.9 3.4 1.2 TJ, Tstg --55 to 150 A W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) Symbol t ≤ 10 sec Steady State Steady State RthJA RthJC Typical Maximum 18 23 50 65 1.0 1.5 Unit _C/W C/ Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71940 S-21441—Rev. A, 19-Aug-02 www.vishay.com 1 Si7483DP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = --250 mA --1.0 Typ Max Unit --3.0 V 100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain Source On Drain-Source On-State State Resistancea VDS = 0 V, VGS = 20 V Diode Forward Voltagea --1 VDS = --24 V, VGS = 0 V, TJ = 70_C --10 VDS = --5 V, VGS = --10 V rDS(on) DS( ) Forward Transconductancea VDS = --24 V, VGS = 0 V mA --30 A VGS = --10 V, ID = --24 A 0.0041 0.005 VGS = --4.5 V, ID = --17 A 0.0077 0.0095 gfs VDS = --15 V, ID = --24 A 70 VSD IS = --2.9 A, VGS = 0 V --0.75 --1.1 120 180 VDS = --15 V, VGS = --10 V, ID = --24 A 18.3 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 33.2 Turn-On Delay Time td(on) 25 Rise Time tr nC 40 40 65 220 350 tf 125 200 Gate Resistance Rg 4 Source-Drain Reverse Recovery Time trr Turn-Off Delay Time VDD = --15 V, RL = 15 Ω ID ≅ --1 A, VGEN = --10 V, RG = 6 Ω td(off) Fall Time IF = --2.9 A, di/dt = 100 A/ms ns Ω 87 135 ns Notes a. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 60 VGS = 10 thru 4 V 50 40 I D -- Drain Current (A) I D -- Drain Current (A) 50 Transfer Characteristics 60 30 20 10 40 30 TC = 125_C 20 25_C 10 3V --55_C 0 0 1 2 3 4 VDS -- Drain-to-Source Voltage (V) www.vishay.com 2 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS -- Gate-to-Source Voltage (V) Document Number: 71940 S-21441—Rev. A, 19-Aug-02 Si7483DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current VGS = 4.5 V 0.008 Capacitance 10000 8000 C -- Capacitance (pF) r DS(on) -- On-Resistance ( Ω ) 0.010 0.006 VGS = 10 V 0.004 0.002 Ciss 6000 4000 Coss 2000 Crss 0.000 0 0 10 20 30 40 50 0 6 ID -- Drain Current (A) r DS(on) -- On-Resistance (Ω) (Normalized) V GS -- Gate-to-Source Voltage (V) 1.6 VDS = 15 V ID = 24 A 8 6 4 2 0 0 20 40 60 80 100 1.4 30 VGS = 10 V ID = 24 A 1.2 1.0 0.8 0.6 --50 120 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.020 r DS(on) -- On-Resistance ( Ω ) 60 I S -- Source Current (A) 24 On-Resistance vs. Junction Temperature Qg -- Total Gate Charge (nC) TJ = 150_C 10 TJ = 25_C 0.016 0.012 ID = 24 A 0.008 0.004 0.000 1 0.00 18 VDS -- Drain-to-Source Voltage (V) Gate Charge 10 12 0.2 0.4 0.6 0.8 VSD -- Source-to-Drain Voltage (V) Document Number: 71940 S-21441—Rev. A, 19-Aug-02 1.0 1.2 0 2 4 6 8 10 VGS -- Gate-to-Source Voltage (V) www.vishay.com 3 Si7483DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Single Pulse Power 200 0.6 160 ID = 250 mA 0.4 Power (W) V GS(th) Variance (V) Threshold Voltage 0.8 0.2 120 80 0.0 40 --0.2 --0.4 --50 --25 0 25 50 75 100 125 0 0.001 150 0.01 TJ -- Temperature (_C) 0.1 1 10 Time (sec) 100 Safe Operating Area 1 ms Limited by rDS(on) I D -- Drain Current (A) 10 10 ms 100 ms 1 1s 0.1 10 s TC = 25_C Single Pulse dc 0.01 0.1 1 10 100 VDS -- Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 50_C/W 3. TJM -- TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 --4 www.vishay.com 4 10 --3 10 --2 10 --1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71940 S-21441—Rev. A, 19-Aug-02 Si7483DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10 --4 Document Number: 71940 S-21441—Rev. A, 19-Aug-02 10 --3 10 --2 10 --1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1